Abstract: Systems and methods forecast inbound telecommunications, and more particularly, analyze real-time and historical call center data, and apply a forecasting model to the data in order to predict inbound call volume. These systems and methods employ tools that manipulate call center data and generate visual representations of metrics pertaining to forecasting call center data via a dashboard.

Abstract: It is provided a process of converting syngas resulting from the gasification of a carbonaceous material into acetic acid and acrylic acid comprising converting the syngas into methanol and separating the methanol into a first and second stream, carbonylation of the first stream of methanol producing methyl acetate, hydrolyzing the methyl acetate to obtain acetic acid, oxidizing the second stream of the methanol into formaldehyde in a gas phase reaction, and reacting by aldol condensation the formaldehyde and acetic acid to produce acrylic acid. Particularly, the first stream of methanol is dehydrated to produce dimethyl ether (DME) and the DME is further contacted with syngas under an iodide-free environment to produce the methyl acetate by carbonylation, and subsequently acetic acid using a reactive distillation column.

Abstract: Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate. The faceplate may define a central recess about the central axis extending from the second surface of the faceplate to a depth less than a thickness of the faceplate.

Abstract: Offers are distributed by providing a plurality of offers to a first user and directing the first user to distribute the offers to selected additional users. The plurality of offers may be customized by the system based on the first user's previous interactions with the system, and may be further customized by the first user before sending the offers to the selected additional users. The additional users may include any user including known and/or unknown users and/or contact in the first's user networks including business and/or social networks. The system may also track and store information relating to the distribution, access, and redemption of the offer by the first user and the selected additional users and provide additional incentives based upon the access and redemption, and based upon interactions between the first user and the selected additional users.

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate. The faceplate may define a plurality of recesses extending about and radially outward of the plurality of apertures.

Abstract: Systems and methods are described for executing tightly coupled parallel applications on a serverless computing system. A serverless computing system executes user-submitted code in sandboxed environments such as virtual machines or containers. To support execution of parallel applications that require data transfer between instances of the application, the serverless computing system implements an ephemeral mesh network that allows instances of the parallel application to communicate with each other while executing in their respective sandboxes. In some embodiments, a controller or parent application may also connect to the ephemeral mesh network to coordinate execution of the parallel applications. In other embodiments, the parent application may be external to the serverless computing system.

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.

Abstract: Systems and methods are described for executing tightly coupled parallel applications on a serverless computing system. A serverless computing system executes user-submitted code in sandboxed environments such as virtual machines or containers. To support execution of parallel applications that require data transfer between instances of the application, the serverless computing system implements an ephemeral mesh network that allows instances of the parallel application to communicate with each other while executing in their respective sandboxes. In some embodiments, a controller or parent application may also connect to the ephemeral mesh network to coordinate execution of the parallel applications. In other embodiments, the parent application may be external to the serverless computing system.

Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.

Abstract: Embodiments of the present disclosure include techniques for programming hierarchical schedulers for ports of network devices. A configuration for configuring a hierarchy of a plurality of scheduling nodes of a packet scheduler is received. The packet scheduler is configured to schedule packets for egress out of a port of the network device. The configuration is specified in a human-readable format. Based on the configuration, the packet scheduler of the port is programmed. A plurality of packets are received at a plurality of physical queues communicatively coupled to the packet scheduler. The packet scheduler is used to select a packet in the plurality of packets from a physical queue in the plurality of physical queues. The selected packet is forwarded out the port of the network device.

Abstract: Techniques are described for monitoring application performance in a computer network. For example, a network management system (NMS) includes a memory storing path data received from a plurality of network devices, the path data reported by each network device of the plurality of network devices for one or more logical paths of a physical interface from the given network device over a wide area network (WAN). Additionally, the NMS may include processing circuitry in communication with the memory and configured to: determine, based on the path data, one or more application health assessments for one or more applications, wherein the one or more application health assessments are associated with one or more application time periods for a site, and in response to determining at least one failure state, output a notification including identification of a root cause of the at least one failure state.

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.

Abstract: Techniques are described for monitoring application performance in a computer network. For example, a network management system (NMS) includes a memory storing path data received from a plurality of network devices, the path data reported by each network device of the plurality of network devices for one or more logical paths of a physical interface from the given network device over a wide area network (WAN). Additionally, the NMS may include processing circuitry in communication with the memory and configured to: determine, based on the path data, one or more application health assessments for one or more applications, wherein the one or more application health assessments are associated with one or more application time periods for a site, and in response to determining at least one failure state, output a notification including identification of a root cause of the at least one failure state.

Abstract: Methods, devices, and systems for facilitation of communication between participants of an electronic marketplace involve receiving a message generated from a market participant and transmitting the message to other market participants. The facilitation also involves receiving responses to the message from the other market participants and transmitting the responses to the message originating market participant such that the transmitted response is imperceptible to the other market participants.

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.