Abstract: A selection of manufacturing equipment associated with a current fabrication process of a manufacturing environment is received. A respective eco-efficiency model corresponding to at least one of the selected manufacturing equipment is identified from a set of eco-efficiency models. Each of the set of eco-efficiency models represents a prior environmental resource consumption of a prior fabrication process involving a respective manufacturing equipment component. Values for one or more process parameters for the current fabrication process that will reduce environmental resource consumption of the current fabrication process when run using the selected manufacturing equipment are determined based on the identified respective eco-efficiency model. The determined values for the one or more process parameters are applied to the current fabrication process.

Abstract: A method includes receiving, via a graphical user interface (GUI), by a processing device, a first user input to view data associated with a first process chamber in a first chamber data mode. Data of the first chamber data mode includes data of a process operation performed in the first process chamber. The method further includes providing, for display on the GUI, first display data of the first data chamber mode responsive to receiving the first user input. The method further includes receiving a second user input to view data associated with the first process chamber in a second chamber data mode. Data of the second chamber data mode includes data of a virtual process operation performed by a virtual representation of the first process chamber. The method further includes providing, for display on the GUI, second display data of the second data chamber mode.

Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Abstract: A first selection of a first fabrication process and/or first manufacturing equipment to perform manufacturing operations of the first fabrication process is received. The first selection is input into a digital replica of the first manufacturing equipment, where the digital replica outputs physical conditions of the first fabrication process. Environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process is determined. A modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment is determined. Applying the modification to the first fabrication and/or providing the modification for display by a graphical user interface (GUI) is performed.

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber.

Abstract: The present disclosure relates to heaters and plasma generators for gas activation, and related chamber components, methods, and processing chambers for semiconductor manufacturing. The processing chamber includes a chamber body comprising a flow module, a window, one or more heat sources, a substrate support, and a plasma generator. The window and the chamber body at least partially defining a processing volume. The one or more heat sources are operable to heat the processing volume. The substrate support is disposed in the processing volume. The plasma generator disposed at least partially around the processing volume. The window further includes a flange. The flange includes an opaque material. An induction coil is embedded in the opaque material of the flange.

Abstract: The present disclosure relates to plasma injection configurations for process chambers, and related apparatus, chamber kits, and methods for semiconductor manufacturing. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes one or more sidewalls, a window at least partially defining a processing volume, a substrate support disposed in the processing volume, and one or more heat sources operable to heat the processing volume. The processing chamber includes a flow housing disposed at least partially outwardly of the one or more sidewalls, and one or more radio frequency (RF) coils disposed at least partially around the flow housing.

Abstract: The present disclosure relates to electrode configurations and magnet configurations for processing chambers, and related methods and apparatus, for semiconductor manufacturing. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes one or more sidewalls, a plate at least partially defining a processing volume, and a substrate support disposed in the processing volume. The processing chamber includes one or more heat sources operable to heat the processing volume, a first electrode disposed outwardly of the processing volume, and a second electrode coupled to the substrate support.

Abstract: Embodiments disclosed herein generally provide improved deposition uniformity in processing chambers. In one embodiment which can be combined with other embodiments, a processing chamber applicable for use in semiconductor manufacturing is provided. The processing chamber includes a chamber body comprising an inject section and an exhaust section. The processing chamber also includes a plate having an opaque surface. The chamber body and the plate at least partially define a processing volume. The processing chamber includes one or more heat sources operable to heat the processing volume, a substrate support disposed in the processing volume, and one or more coils disposed between the substrate support and a lid of the processing chamber.

Abstract: The present disclosure relates to modular processing chambers, and related methods, apparatus, modules, and components for semiconductor manufacturing. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body and a plate. The chamber body includes an inject section and an exhaust section. The chamber body and the plate at least partially define a processing volume. The plate includes at least one opaque surface. The processing chamber includes one or more heat sources configured to heat the processing volume, and a substrate support disposed in the processing volume and above the one or more heat sources. The plate is disposed between the substrate support and a lid of the processing chamber.

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

Abstract: In one aspect of the present disclosure, a method includes obtaining, by a processing device, input data indicative of a first set of process parameters. The method further includes providing the input data to a first process model. The method further includes obtaining, from the first process model, first predictive output indicative of performance of a first process operation in accordance with the first set of process parameters. The method further includes providing the first predictive output to a second process model. The method further includes obtaining, from the second process model, second predictive output indicative of performance of a second process operation, different than the first process operation or a repetition of the first process operation, in accordance with the first set of process parameters. The method further includes performing a corrective action in view of the second predictive output.

Abstract: In some embodiments, a physical vapor deposition apparatus includes a top flux optimizer configured to be biased. The physical vapor deposition apparatus further includes an intermediate flux optimizer configured to be biased. The top flux optimizer and the intermediate flux optimizer are separated by a first distance. The physical vapor deposition apparatus further includes a bottom flux optimizer configured to be biased. The bottom flux optimizer and the intermediate flux optimizer are separated by a second distance. The physical vapor deposition apparatus further includes a top power source coupled to the top flux optimizer, an intermediate power source coupled to the intermediate flux optimizer, and a bottom power source coupled to the bottom flux optimizer.

Abstract: A method includes receiving, via a graphical user interface (GUI), by a processing device, a first user input to view data associated with a first process chamber in a first chamber data mode. Data of the first chamber data mode includes data of a process operation performed in the first process chamber. The method further includes providing, for display on the GUI, first display data of the first data chamber mode responsive to receiving the first user input. The method further includes receiving a second user input to view data associated with the first process chamber in a second chamber data mode. Data of the second chamber data mode includes data of a virtual process operation performed by a virtual representation of the first process chamber. The method further includes providing, for display on the GUI, second display data of the second data chamber mode.

Abstract: A method includes measuring a subset of property values within a manufacturing chamber during a process performed on a substrate within the manufacturing chamber. The method further includes determining property values in the manufacturing chamber at locations removed from the locations the measurements are taken. The method further includes performing a corrective action based on the determined properties.

Abstract: Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

Abstract: A method includes measuring a subset of property values within a manufacturing chamber during a process performed on a substrate within the manufacturing chamber. The method further includes determining property values in the manufacturing chamber at locations removed from the locations the measurements are taken. The method further includes performing a corrective action based on the determined properties.

Abstract: A first selection of a first fabrication process and/or first manufacturing equipment to perform manufacturing operations of the first fabrication process is received. The first selection is input into a digital replica of the first manufacturing equipment, where the digital replica outputs physical conditions of the first fabrication process. Environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process is determined. A modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment is determined. Applying the modification to the first fabrication and/or providing the modification for display by a graphical user interface (GUI) is performed.

Abstract: Methods of introducing precursors through a segmented showerhead are provided herein. In some embodiments, a method of introducing precursors through a segmented showerhead having a plurality of gas delivery portions that are fluidly isolated includes heating a first gas delivery portion to a first temperature; and simultaneously heating a second gas delivery portion to a second temperature different than the first temperature, wherein each of the first and second gas delivery portions (i) have a wedge shaped body that defines a plenum, (ii) are coplanar, and (iii) together form a showerhead having a circular shape.

Abstract: A method including receiving, by a processing device, a first selection of at least one of a first fabrication process or first manufacturing equipment to perform manufacturing operations of the first fabrication process. The method can further include inputting the first selection into a digital replica of the first manufacturing equipment wherein the digital replica outputs physical conditions of the first fabrication process. The method may further include determining environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process. The processing device may further determine a modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment.