Patents by Inventor Pravin K. Narwankar

Pravin K. Narwankar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7658973
    Abstract: A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.
    Type: Grant
    Filed: February 4, 2004
    Date of Patent: February 9, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Pravin K. Narwankar, Gary E. Miner, Arnaud Lepert
  • Publication number: 20090246972
    Abstract: Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
    Type: Application
    Filed: March 27, 2008
    Publication date: October 1, 2009
    Inventors: SHREYAS S. KHER, Pravin K. Narwankar, Khaled Z. Ahmed, Yi Ma
  • Publication number: 20080099933
    Abstract: A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.
    Type: Application
    Filed: October 31, 2006
    Publication date: May 1, 2008
    Inventors: Kenric T. Choi, Pravin K. Narwankar, Shreyas S. Kher, Son T. Nguyen, Paul Deaton, Khai Ngo, Paul Chhabra, Alan H. Ouye, Dien-Yeh (Daniel) Wu
  • Publication number: 20040248392
    Abstract: A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.
    Type: Application
    Filed: February 4, 2004
    Publication date: December 9, 2004
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Pravin K. Narwankar, Gary Miner, Arnaud Lepert
  • Patent number: 6573150
    Abstract: The present invention provides a method of integrating tantalum oxide into an MIM capacitor for a semiconductor device, comprising the step of vapor-depositing the tantalum oxide from an oxygen-free liquid precursor and under process conditions comprising a deposition temperature of less than about 500° C. and a deposition pressure of less than about 96 Torr, wherein the tantalum oxide is integrated into the MIM capacitor. Also provided is a method of forming an MIM capacitor comprising the step of integrating a tantalum oxide dielectric film with a tantalum nitride or a titanium nitride bottom electrode deposited on a substrate and a titanium nitride top electrode thereby forming an MIM capacitor.
    Type: Grant
    Filed: October 10, 2000
    Date of Patent: June 3, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Randall S. Urdahl, Pravin K. Narwankar, Shankarrram A. Athreya, Asher K. Sinensky, Andrea M. Mendoza
  • Publication number: 20020192370
    Abstract: An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.
    Type: Application
    Filed: July 12, 2002
    Publication date: December 19, 2002
    Inventors: Craig R. Metzner, Turgut Sahin, Gregory F. Redinbo, Pravin K. Narwankar, Patricia M. Liu
  • Patent number: 6475854
    Abstract: A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: November 5, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Pravin K. Narwankar, Annabel Nickles, Xiaoliang Jin, Deepak Upadhyaya, Yaxin Wang
  • Patent number: 6454860
    Abstract: An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.
    Type: Grant
    Filed: October 27, 1998
    Date of Patent: September 24, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Craig R. Metzner, Turgut Sahin, Gregory F. Redinbo, Pravin K. Narwankar, Patricia M. Liu
  • Patent number: 6387761
    Abstract: A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H2). In a prefered embodiment of the present invention the ambient comprises H2 and N2.
    Type: Grant
    Filed: February 4, 2000
    Date of Patent: May 14, 2002
    Assignees: Applied Materials, Inc., Vanguard Semiconductor, Ltd.
    Inventors: Wong-Cheng Shih, Pravin K. Narwankar, Randall S. Urdahl, Turgut Sahin
  • Publication number: 20020009861
    Abstract: A method and apparatus for forming and annealing a dielectric layer. According to the present invention an active atomic species is generated in a first chamber. A dielectric layer formed on a substrate is then exposed to the active atomic species in a second chamber, wherein the second chamber is remote from the first chamber.
    Type: Application
    Filed: June 12, 1998
    Publication date: January 24, 2002
    Inventors: PRAVIN K. NARWANKAR, TURGUT SAHIN, RANDALL S. URDAHL, ANKINEEDU VELAGA, PATRICIA LIU
  • Publication number: 20010043453
    Abstract: A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.
    Type: Application
    Filed: December 21, 2000
    Publication date: November 22, 2001
    Inventors: Pravin K. Narwankar, Annabel Nickles, Xiaoliang Jin, Deepak Upadhyaya, Yaxin Wang
  • Publication number: 20010035127
    Abstract: An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.
    Type: Application
    Filed: October 27, 1998
    Publication date: November 1, 2001
    Inventors: CRAIG R. METZNER, TURGUT SAHIN, GREGORY F. REDINBO, PRAVIN K. NARWANKAR, PATRICIA M. LIU
  • Patent number: 6274058
    Abstract: A processing chamber cleaning method is described which utilizes microwave energy to remotely generate a reactive species to be used alone or in combination with an inert gas to remove deposits from a processing chamber. The reactive species can remove deposits from a first processing region at a first pressure and then remove deposits from a second processing region at a second pressure. Also described is a cleaning process utilizing remotely generated reactive species in a single processing region at two different pressures. Additionally, different ratios of reactive gas and inert gas may be utilized to improve the uniformity of the cleaning process, increase the cleaning rate, reduce recombination of reactive species and increase the residence time of reactive species provided to the processing chamber.
    Type: Grant
    Filed: July 2, 1999
    Date of Patent: August 14, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Ravi Rajagopalan, Patricia M. Liu, Pravin K. Narwankar, Huyen Tran, Padmanabhan Krishnaraj, Alan Ablao, Tim Casper
  • Patent number: 6218300
    Abstract: A method and apparatus for forming a titanium doped tantalum pentaoxide dielectric using a CVD process. According to the present invention a substrate is placed in the deposition chamber. A source of tantalum, a source of titanium, and an oxygen containing gas are then fed into the chamber. Thermal energy is used to decompose the source of tantalum to form tantalum atoms, and decompose the source of titanium to form titanium atoms in the deposition chamber. The titanium atoms, tantalum atoms and the oxygen containing gas then react to form a tantalum pentaoxide dielectric film doped with titanium.
    Type: Grant
    Filed: June 12, 1998
    Date of Patent: April 17, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Pravin K. Narwankar, Turgut Sahin, Randall S. Urdahl, Ankineedu Velaga, Patricia Liu
  • Patent number: 6204203
    Abstract: A method of forming a metal oxide dielectric film. According to the present invention an amorphous metal oxide dielectric film is deposited over a substrate utilizing a metal organic precursor. The substrate is then heated in an inert ambient to convert the amorphous metal oxide dielectric to a polycrystalline metal oxide dielectric. The polycrystalline metal dielectric is then heated in a oxygen containing ambients.
    Type: Grant
    Filed: October 14, 1998
    Date of Patent: March 20, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Pravin K. Narwankar, Turgut Sahin, Gregory F. Redinbo, Patricia M. Liu, Huyen T. Tran
  • Patent number: 6037235
    Abstract: A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H.sub.2). In a prefered embodiment of the present invention the ambient comprises H.sub.2 and N.sub.2.
    Type: Grant
    Filed: September 14, 1998
    Date of Patent: March 14, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Pravin K. Narwankar, Randall S. Urdahl, Turgut Sahin, Wong-Cheng Shih