Abstract: Low-frequency digital data input signals in an integrated circuit are controlled between first and second stages in a signal input path of the integrated circuit by a capacitance in the signal input path between the first and second stages. The capacitance is sized to attenuate high-frequency noise in the signal input path. In one embodiment, the integrated circuit may be an input buffer circuit in which the capacitance is a capacitor between the signal input path and a reference potential, a voltage source, or both. In another embodiment, the integrated circuit may be an oscillator circuit in which the capacitance is provided between corresponding elements of a differential pair of transistors in the first stage.

Abstract: Reducing electromagnetic radiation from semiconductor devices. At least some of the illustrative embodiments are methods comprising driving a Boolean state to a signal pad of a semiconductor device (the driving through a transistor with a first drain-to-source impedance during the driving), and maintaining the Boolean state applied to the signal pad through the transistor with a second drain-to-source impedance, higher than the first drain-to-source impedance.

Abstract: Reducing electromagnetic radiation from semiconductor devices. At least some of the illustrative embodiments are methods comprising driving a Boolean state to a signal pad of a semiconductor device (the driving through a transistor with a first drain-to-source impedance during the driving), and maintaining the Boolean state applied to the signal pad through the transistor with a second drain-to-source impedance, higher than the first drain-to-source impedance.

Abstract: An electrostatic protection circuit has a transistor for pumping charge into the substrate and a transistor, including a parasitic transistor, for removing charge from the substrate and tabs. The circuit is enclosed by barrier that prevents the migration of charge from the region of the transistors. The added charge in the region of the parasitic transistor, resulting from the increased charge in the region of the parasitic transistor, increases the flow of current between electrodes of the transistor, thereby removing the electrostatic charge more efficiently. removing the electrostatic charge more efficiently.

Abstract: A method and apparatus independently controls the increasing rate and the decreasing rate a P-channel power FET and an N-channel power FET driving an inductive load. Circuits inhibit turning ON the P-channel FET until the voltage on the gate of the N-channel FET falls below its turn-on voltage threshold, and turning ON the N-channel FET until the voltage on the gate of the P-channel FET falls below its turn-on voltage threshold.

Abstract: A semiconductor dynamic memory device contains circuitry for implementing either page mode or nibble mode access using a selected conductor connection. A clock voltage used in column decoding and outputting is coupled either from the column strobe or the CAS input by a conductor so that the clock voltage is rendered either dependent upon or independent from the cycling of the column strobe.

Abstract: A semiconductor dynamic memory device is disclosed which contains circuitry for implementing both page mode and nibble modes using a conductor level selection. A clock voltage used in column decoding and output is either coupled to or decoupled from the column strobe or CAS input by conductor, so this clock voltage is rendered either dependent on, or independent of, the cycling of the column strobe.

Abstract: A semiconductor dynamic memory device has an array of one-transistor cells, with row and column decode to produce a 4-bit wide input or output from the array. Single-bit data-in and data-out terminals for the device are coupled to the 4-bit array input/output in a sequential mode. The row and column addresses are latched when RAS and CAS drop, and the latched address includes the address of the starting bit within the 4-bit sequence for serial I/O. The other three bits follow as CAS is cycled. This starting address is used to set a bit in a 4-bit ring counter, which is then used to cycle through the sequence. To reduce power dissipation, the inverter stages of the ring counter are operated by pulsed clocks generated from the asynchronous memory control clocks received from the CPU.

Abstract: A semiconductor dynamic memory device has an array of one-transistor cells, with row and column decode to produce a 4-bit wide input or output. Single-bit data-in and data-out terminals for the device may be coupled to the 4-bit array input/output in a sequential mode. The row and column addresses are latched when RAS and CAS drop, and this includes the address of the starting bit within the 4-bit sequence. The other three bits follow as CAS is cycled. This starting address is used to set a bit in a 4-bit ring counter, which is then used to cycle through the sequence.