Abstract: A process of forming an array of monolithically integrated thin film photovoltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.

Abstract: A process of forming an array of monolithic ally integrated thin film photo voltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A process of forming an array of monolithic ally integrated thin film photo voltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.

Abstract: A process of forming an array of monolithically integrated thin film photovoltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.

Abstract: A soft seamless acrylonitrile bladder having excellent air permeability combined with good bounce characteristics for inflatable balls obtained by latex dipping process. The said process involves dipping hot molds in a coagulant bath of calcium nitrate and water and later dipping the dried, coagulant coated formers in a compounded latex bath of carboxylated acrylonitrile butadiene latex, the dip being single or multiple depending upon the desired wall thickness. The said latex dipping process allows low manufacturing cost, high productivity and low rejection rate bladders having uniform weight varying from 500 mg/inch.sup.2 to 1.5 g/inch.sup.2, modulus varying from 17 to 20 Kg/Cm.sup.2, tensile strength of 150-180 Kg/Cm2 and elongation at break 650-750%.

Abstract: A soft seamless acrylonitrile bladder having excellent air permeability combined with good bounce characteristics for inflatable balls obtained by latex dipping process. The said process involves dipping hot moulds in a coagulant bath of calcium nitrate and water and later dipping the dried, coagulant coated formers in a compounded latex bath of carboxylated acrylonitrile butadiene latex, the dip being single or multiple depending upon the desired wall thickness. The said latex dipping process allows low manufacturing cost, high productivity and low rejection rate bladders having uniform weight varying from 500 mg/inch.sup.2 to 1.5 g/inch.sup.2, modulus varying from 17 to 20 Kg/Cm.sup.2, tensile strength of 150-180 Kg/Cm2 and elongation at break 650-750%.

Abstract: A soft seamless acrylonitrile bladder having excellent air permeability combined with good bounce characteristics for inflatable balls obtained by latex dipping process. The said process involves dipping hot molds in a coagulant bath of calcium nitrate and water and later dipping the dried, coagulant coated formers in a compounded latex bath of carboxylated acrylonitrile butadiene latex, the dip being single or multiple depending upon the desired wall thickness. The said latex dipping process allows low manufacturing cost, high productivity and low rejection rate bladders having uniform weight varying from 500 mg/inch2 to 1.5 g/inch2, modulus varying from 17 to 20 Kg/Cm2, tensile strength of 150-180 Kg/Cm2 and elongation at break 650-750%.

Abstract: A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.

Abstract: A soft seamless acrylonitrile bladder having excellent air permeability combined with good bounce characteristics for inflatable balls obtained by latex dipping process. The said process involves dipping hot moulds in a coagulant bath of calcium nitrate and water and later dipping the dried, coagulant coated formers in a compounded latex bath of carboxylated acrylonitrile butadiene latex, the dip being single or multiple depending upon the desired wall thickness. The said latex dipping process allows low manufacturing cost, high productivity and low rejection rate bladders having uniform weight varying from 500 mg/inch2 to 1.5 g/inch2, modulus varying from 17 to 20 Kg/Cm2, tensile strength of 150-180 Kg/Cm2 and elongation at break 650-750%.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A support system for retaining a photovoltaic device on a generally planar surface, without any mechanical connection to the surface, includes a frame assembly which rests upon the surface and supports one or more photovoltaic devices in a spaced apart relationship with the surface. At least one ballast pan is attached to the frame assembly. The ballast pan is configured to retain a ballast material therein. The ballast pan may comprise a peripheral ballast pan which extends along the perimeter of the assembly or it may comprise an internal ballast pan which is disposed beneath the photovoltaic device. Also disclosed herein is a method for using the support system.

Abstract: A photovoltaic building material comprises a substrate having one or more photovoltaic generating devices encapsulated thereupon. The substrate includes a body of contact adhesive material, preferably protected by a release layer. The material is readily installed onto a roof, wall or other portion of a building structure by use of the adhesive. The material can also be used for the custom fabrication of power generating modules, and such modules and methods for their manufacture are disclosed herein.

Abstract: A photovoltaic building material comprises a substrate having one or more photovoltaic generating devices encapsulated thereupon. The substrate includes a body of contact adhesive material, preferably protected by a release layer. The material is readily installed onto a roof, wall or other portion of a building structure by use of the adhesive.

Abstract: A photovoltaic building material comprises a substrate having one or more photovoltaic generating devices encapsulated thereupon. The substrate includes a body of contact adhesive material, preferably protected by a release layer. The material is readily installed onto a roof, wall or other portion of a building structure by use of the adhesive. The material can also be used for the custom fabrication of power generating modules, and such modules and methods for their manufacture are disclosed herein.

Abstract: A photovoltaic building structure comprises a number of interlockable building panels having photovoltaic generator devices supported thereupon. The photovoltaic devices may be attached to the panels by a vacuum lamination process in which a flexible, air impermeable membrane covers a stack of layers being laminated to the panel. Evacuation of air from between the membrane and panel causes the lamination stack to be compressed against the panel, and a pressure and/or heat activatable adhesive is employed to adhere the various layers to the panel. Installation of the panels is in accord with standard building techniques, and the presence of the photovoltaic generators does not change the mechanical characteristics of the panels.