Abstract: An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

Abstract: A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.

Abstract: A method of continuously electrically interconnecting in series a plurality of smaller area photovoltaic cells from a continuous, elongated web of photovoltaic cell material which is maintained in continual motion.

Abstract: Apparatus for producing electronic signals which are representative of a detectable condition on an image-bearing surface. The apparatus includes an elongated array of distinct thin film photosensitive elements formed on a common flexible large area substrate. The elongated array of photosensitive elements are fabricated as a large area, photovoltaic structure formed of a plurality of thin film layers, including a first layer of thin film conductive material. The discrete photosensitive elements are defined by patterning of the conductive layer into shaped regions which determine the overall configuration and dimensions of each element.

Abstract: A method of depositing a substantially hydrogen free or controlled hydrogen content multi-element alloy film on a substrate. The method utilizes a microwave excited plasma of a hydrogen free precursor gas to deposit a hard, adherent coating. The method comprises providing a substrate to be coated in a vacuum deposition chamber, with a source of microwave energy coupled to the vacuum deposition chamber. A substantially hydrogen free reaction gas precursor composition is introduced into the reaction chamber at a pressure corresponding substantially to a pressure minimum of the modified Paschen curve for the reaction gas precursor composition. Activation of the source of microwave energy excites the reaction gas precursor composition, in this way forming a plasma in the vacuum deposition chamber to deposit a substantially hydrogen free or controlled hydrogen content multi-element alloy film on the substrate.

Abstract: An electronic device of the type including a thin film body having a superposed electrode has short circuit defects therein passivated by a conversion process in which the electrical resistivity of the electrode material is increased proximate the defect regions. Conversion is accomplished by exposing the electrode material to a conversion reagent and activating the reagent proximate the defect regions. The process may be utilized for a variety of differently configured devices, and may be readily adapted for use in a roll-to-roll device fabrication process.

Abstract: A method for the plasma coating of a layer of material atop a semiconductor body, said method and apparatus adapted to substantially prevent damage to the semiconductor body by energetic vaporized species developed during the coating process. The invention has particular utility in the high volume fabrication of thin film semiconductor devices and may be readily adapted to provide the transparent conductive electrode of photoresponsive devices in a continuous roll-to-roll deposition process.

Abstract: An improved method for severing a large area semiconductor device, including a substrate having a base electrode region thereupon, semiconductor body and top electrode into smaller area devices includes the steps of supporting the semiconductor device from the top electrode side thereof and applying a cutting force to the substrate side of the semiconductor device so as to cut the device without establishing short circuit contact between the substrate electrode and the top electrode thereof. Also included is a large area semiconductor device having a protective layer affixed to the top electrode surface thereof. The large area device is readily adapted for severing into smaller area photovoltaic devices by the method disclosed herein.

Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

Abstract: An improved photovoltaic device having a preselected current carrying capacity includes an electrically conductive body, an electrically insulating layer disposed atop the conductive body and a current carrying electrically conductive pattern atop the insulating layer. The material forming the current carrying pattern infiltrates portions of the insulating layer and establishes electrical communication with the electrically conductive body in such a manner that the current carrying capacity of the device is proportional to the area which is infiltrated by the conductive material. Also disclosed herein are methods for the fabrication of the improved device.

Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

Abstract: An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes: a substrate having a semiconductor body disposed thereupon, a current collecting structure such as a bus-grid structure disposed upon the semiconductor body and a transparent conductive electrode overlying the semiconductor body and the current collecting structure. The photovoltaic device may also include a layer of low electrical conductivity material disposed beneath at least portions of the current collecting structure to prevent electrical contact between said structure and defective regions of the device occuring therebelow. Also disclosed are methods for the fabrication of the improved device.

Abstract: An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes a pattern of current flow restricting material operatively disposed so as to limit the flow of electrical current between the substrate and the current collector of the device. Also disclosed are methods for the fabrication of the improved device.

Abstract: An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

Abstract: An improved large area photovoltaic device includes a plurality of electrically interconnected smaller area cells. The smaller area cells each have a laterally disposed bus bar and are disposed in overlapping relationships so that the bus bar of a given cell is beneath the substrate of the adjacent overlapping cell. In this manner the surface of the resulting large area device available for photovoltaic power generation is maximized. Also disclosed herein are methods for the manufacture of the improved device.

Abstract: A method of and apparatus for depositing metallic oxide coatings that are highly electrically transmissive and highly electrically conductive onto a substrate. An r.f. signal is employed to develop an ionized plasma of metal and oxygen atoms, the plasma being adapted for deposition onto a large area substrate which preferably includes semiconductor layers thereon. The method and apparatus are particularly adapted for the improved deposition of transmissive and conductive coatings which include low melting point metals onto the surface of plastic, glass or metallic substrates. The deposition may be accomplished in either a continuous or batch process mode.

Abstract: An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a material chosen from the group consisting essentially of oxides, nitride and carbides of: indium, tin, cadmium, zinc, antimony, silicon, chromium and mixtures thereof.

Abstract: Disclosed is an improved photovoltaic device design and method. The design is especially useful for large area photovoltaic devices and includes a first electrode, a semiconductor body over the first electrode, a transparent electrically conductive layer over the semiconductor body and a bus grid structure in electrical contact with the conductor layer for collecting and carrying current generated by the photovoltaic device. Structure is provided for reducing the degrading effect of a low resistance current path or short in the semiconductor body.

Abstract: A method of depositing a preselected pattern of electrically conductive metallic material onto a layer of relatively transparent electrically conductive material. In its broadest form the method includes the single step of electroplating the electrically conductive metallic material onto the transparent conductive layer. The method has particular utility in electroplating metal grid patterns onto the indium tin oxide layer of an amorphous thin film photovoltaic device.