Patents by Inventor Pushkara R. Varanasi
Pushkara R. Varanasi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130017491Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 14, 2012Publication date: January 17, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130011790Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130011786Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 13, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130011794Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130011792Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 13, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130011793Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130011787Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 13, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130011789Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130011795Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130011788Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: ApplicationFiled: September 13, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sen Liu, Pushkara R. Varanasi
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Publication number: 20130001484Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.Type: ApplicationFiled: September 10, 2012Publication date: January 3, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Martin Glodde, Dario L. Goldfarb, Wu-Song Huang, Wai-Kin Li, Sen Liu, Pushkara R. Varanasi, Libor Vyklicky
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Patent number: 8343706Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.Type: GrantFiled: January 25, 2010Date of Patent: January 1, 2013Assignee: International Business Machines CorporationInventors: Sen Liu, Pushkara R. Varanasi
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Patent number: 8304178Abstract: The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.Type: GrantFiled: October 26, 2009Date of Patent: November 6, 2012Assignee: International Business Machines CorporationInventors: Mahmoud Khojasteh, Wu-Song Huang, Margaret C. Lawson, Kaushal S. Patel, Irene Popova, Pushkara R. Varanasi
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Patent number: 8293451Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.Type: GrantFiled: August 18, 2009Date of Patent: October 23, 2012Assignee: International Business Machines CorporationInventors: Martin Glodde, Dario L. Goldfarb, Wu-Song Huang, Wai-Kin Li, Sen Liu, Pushkara R. Varanasi, Libor Vyklicky
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Publication number: 20120214099Abstract: A composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, ?-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.Type: ApplicationFiled: May 2, 2012Publication date: August 23, 2012Applicant: International Business Machines CorporationInventors: Kuang-Jung Chen, Wu-Song Huang, Ranee Wai-Ling Kwong, Sen Liu, Pushkara R. Varanasi
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Patent number: 8236476Abstract: A method and a composition are provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.Type: GrantFiled: January 8, 2008Date of Patent: August 7, 2012Assignee: International Business Machines CorporationInventors: Kuang-Jung Chen, Wu-Song Huang, Ranee Wai-Ling Kwong, Sen Liu, Pushkara R. Varanasi
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Publication number: 20120178027Abstract: A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.Type: ApplicationFiled: March 13, 2012Publication date: July 12, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kuang-Jung Chen, Wu-Song Huang, Ranee Wai-Ling Kwong, Sen Liu, Pushkara R. Varanasi
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Patent number: 8202678Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.Type: GrantFiled: June 4, 2009Date of Patent: June 19, 2012Assignee: International Business Machines CorporationInventors: Kuang-Jung J. Chen, Mahmoud Khojasteh, Ranee Wai-Ling Kwong, Margaret C. Lawson, Wenjie Li, Kaushal S. Patel, Pushkara R. Varanasi
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Patent number: 8053172Abstract: Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.Type: GrantFiled: February 21, 2008Date of Patent: November 8, 2011Assignee: International Business Machines CorporationInventors: Scott David Halle, Wu-Song Huang, Ranee Wai-Ling Kwong, Pushkara R. Varanasi
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Patent number: 8034533Abstract: Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free heteroaromatic sulfonate anionic component. The photoacid generators preferably contain an onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer. The compositions are especially useful for forming material patterns using 193 nm (ArF) imaging radiation.Type: GrantFiled: January 16, 2008Date of Patent: October 11, 2011Assignee: International Business Machines CorporationInventors: Sen Liu, Pushkara R. Varanasi