Abstract: Various embodiments of the present invention are directed to photonic interconnects that can be used for on-chip as well as off-chip communications between computer system components. In one embodiment of the present invention, a photonic interconnect comprises a plurality of on-chip waveguides. Additionally, the photonic interconnect may include a plurality of off-chip waveguides, and at least one optoelectronic converter. The at least one optoelectronic converter can be photonically coupled to a portion of the plurality of on-chip waveguides, can be photonically coupled to a portion of the plurality of off-chip waveguides, and is in electronic communication with at least one computer system component.

Abstract: A high-index-contrast waveguide structure material used to guide light through a low-refractive-index material. In one embodiment, the waveguide structures are capable of guiding and confining light in such a way that very high optical intensity is obtained in a small cross-sectional area or gap filled with any material with sufficiently low refractive index, relative to the remainder of the structure. The structure may be used to form resonators, optical couplers, directional optical couplers and other optical devices. Structures may be formed consistent with integrated circuit forming processes.

Abstract: A high-index-contrast waveguide structure material used to guide light through a low-refractive-index material. In one embodiment, the waveguide structures are capable of guiding and confining light in such a way that very high optical intensity is obtained in a small cross-sectional area or gap filled with any material with sufficiently low refractive index, relative to the remainder of the structure. The structure may be used to form resonators, optical couplers, directional optical couplers and other optical devices. Structures may be formed consistent with integrated circuit forming processes.

Abstract: A silicon electro-optic waveguide modulator is formed using a metal-oxide-semiconductor (MOS) configuration. Various embodiments are described using different modes of operation of the MOS diode and gate oxide thicknesses. In one example, a high-speed submicron waveguide active device is formed using silicon-on-insulator. A micro-ring resonator intensity-modulator exhibits switching times on the order of tens of pS with modulation depth of 73% with a bias voltage of 5 volts.