Abstract: An integration approach to improve electromigration resistance in a semiconductor device is described. A via hole is formed in a stack that includes an upper dielectric layer, a middle TiN ARC, and a lower first metal layer and is filled with a conformal diffusion barrier layer and a second metal layer. A key feature is that the etch process can be selected to vary the shape and location of the via bottom. A round or partially rounded bottom is formed in the first metal layer to reduce mechanical stress near the diffusion barrier layer. On the other hand, a flat bottom which stops on or in the TiN ARC is selected when exposure of the first metal layer to subsequent processing steps is a primary concern. Electromigration resistance is found to be lower than for a via structure with a flat bottom formed in a first metal layer.

Abstract: In one aspect, the invention is an enamel composition comprising zinc oxide, diboron trioxide, zirconium dioxide, silicon oxide, sodium oxide, barium oxide, lithium oxide, at least one of aluminum oxide and aluminum oxide precursor compounds that form aluminum oxide upon sintering, and at least one of calcium oxide and calcium oxide precursor compounds that form calcium oxide upon sintering. In another aspect, the invention is a product coated with an enamel layer. In yet another aspect, the invention is a method of coating a product.

Abstract: Methods and systems for recognizing a film in a scanner are provided. First, the film is previewed by the scanner to obtain an original preview image. The original preview image comprises a film image corresponding to the film. The original preview image also comprises pixels and each pixel has a first hue value, a second hue value, and a third hue value. The pixels with luminance in a predetermined range are then selected from the original preview image to acquire a second preview image. Next, the second preview image is framed according to the first hue values of the pixels to obtain an image frame. Finally, the image frame is sectioned to recognize the film image.

Abstract: A processing method for the metal surface in a dual damascene manufacturing is applied to a dual damascene semiconductor structure. The dual damascene semiconductor structure has a metal structure and a spin-on-dielectric (SOD) layer formed on the metal structure, wherein the SOD layer has at least one opening exposing a partial surface of the metal structure. Before the opening is filled, the monoxide on the exposed surface is first removed, then the exposed surface is treated by the plasma at an angle inclined to an axis perpendicular to the exposed surface. The processing method provided in the present invention can avoid the exposed surface being damaged by the plasma and improve the adhesion force between the exposed metal surface and the stuff.

Abstract: A processing method for the metal surface in a dual damascene manufacturing is applied to a dual damascene semiconductor structure. The dual damascene semiconductor structure has a metal structure and a spin-on-dielectric (SOD) layer formed on the metal structure, wherein the SOD layer has at least one opening exposing a partial surface of the metal structure. Before the opening is filled, the monoxide on the exposed surface is first removed, then the exposed surface is treated by the plasma at an angle inclined to an axis perpendicular to the exposed surface. The processing method provided in the present invention can avoid the exposed surface being damaged by the plasma and improve the adhesion force between the exposed metal surface and the stuff.

Abstract: A transaction handling system and associated method are described for handling transactions based on a plurality of rule sets that apply to point sets (where the point sets contain points that can be consumed for goods and services, or have some other end-use connotation). Namely, the rule sets can be associated with respective point lots to define the characteristics and behavior of the respective point lots. For example, one rule in an applied rule set can determine whether a consumer is permitted to make a purchase without having sufficient points in the consumer's point lot, thus incurring a negative balance in the point lot. Another rule (e.g., a sandbox rule) can determine whether the consumer is permitted to use points only within a limited identified environment, or whether the consumer can use the points in any environment. An override rule set can override a default rule set on an individual account basis or on an individual consumer basis.

Abstract: A method for scanning and processing a negative film used in a scanner is disclosed. The method includes scanning the negative film to generate an original image; performing a calibration algorithm on the original image according to a calibration curve; and performing a negative algorithm on the calibration image by using negative characteristic parameters of the standard scanner to generate a final image.

Abstract: The present invention provides a method of performing a surface treatment respectively on the via and the trench in a dual damascene process by the plasma having the inclined angle. The residual and/or the metal surface oxide on the bottom of the via are removed in the via and the trench etching process, and the surface treatment is performed on the surface of the trench, thereby preventing the poor electrical and increasing the adhesive force between the surface of the trench and the barrier metal layer, resulting in solving the disadvantage which the surface treatment can not be respectively performed and the trench according to the prior art.

Abstract: A transaction handling system and associated method are described for handling transactions based on a plurality of rule sets that apply to point sets (where the point sets contain points that can be consumed for goods and services, or have some other end-use connotation). Namely, the rule sets can be associated with respective point lots to define the characteristics and behavior of the respective point lots. For example, one rule in an applied rule set can determine whether a consumer is permitted to make a purchase without having sufficient points in the consumer's point lot, thus incurring a negative balance in the point lot. Another rule (e.g., a sandbox rule) can determine whether the consumer is permitted to use points only within a limited identified environment, or whether the consumer can use the points in any environment. An override rule set can override a default rule set on an individual account basis or on an individual consumer basis.

Abstract: An integration approach to improve electromigration resistance in a semiconductor device is described. A via hole is formed in a stack that includes an upper dielectric layer, a middle TiN ARC, and a lower first metal layer and is filled with a conformal diffusion barrier layer and a second metal layer. A key feature is that the etch process can be selected to vary the shape and location of the via bottom. A round or partially rounded bottom is formed in the first metal layer to reduce mechanical stress near the diffusion barrier layer. On the other hand, a flat bottom which stops on or in the TiN ARC is selected when exposure of the first metal layer to subsequent processing steps is a primary concern. Electromigration resistance is found to be lower than for a via structure with a flat bottom formed in a first metal layer.

Abstract: A mobile wireless communications device and methods therefore, including receiving a signal (710), storing a portion of the received signal (730), identifying all possible pilot signals by determining slot boundary information for the stored signal portion (720), determining frame boundary information and/or scrambling code information (760) of the stored signal portion by correlating the stored signal portion with the scrambling codes based on the slot boundary information. In other embodiments, the search is performed in real-time without storing the signal.

Abstract: An integration approach to improve electromigration resistance in a semiconductor device is described. A via hole is formed in a stack that includes an upper dielectric layer, a middle TiN ARC, and a lower first metal layer and is filled with a conformal diffusion barrier layer and a second metal layer. A key feature is that the etch process can be selected to vary the shape and location of the via bottom. A round or partially rounded bottom is formed in the first metal layer to reduce mechanical stress near the diffusion barrier layer. On the other hand, a flat bottom which stops on or in the TiN ARC is selected when exposure of the first metal layer to subsequent processing steps is a primary concern. Electromigration resistance is found to be lower than for a via structure with a flat bottom formed in a first metal layer.

Abstract: An improved method of forming a dual damascene structure that includes an organosilicate glass (OSG) dielectric layer is described. A via first process is followed in which a via is formed in the OSG layer and preferably stops on a SiC layer. The SiC layer is removed prior to stripping a photoresist containing the via pattern. A planarizing BARC layer is formed in the via to protect the exposed substrate from damage during trench formation. The method provides higher Kelvin via and via chain yields. Damage to the OSG layer at top corners of the via and trench is avoided. Furthermore, there is no pitting in the OSG layer at the trench bottom. Vertical sidewalls are achieved in the via and trench openings and via CD is maintained. The OSG loss during etching is minimized by removing the etch stop layer at an early stage of the dual damascene sequence.

Abstract: Methods and systems for recognizing a film in a scanner are provided. First, the film is previewed by the scanner to obtain an original preview image. The original preview image comprises a film image corresponding to the film. The original preview image also comprises pixels and each pixel has a first hue value, a second hue value, and a third hue value. The pixels with luminance in a predetermined range are then selected from the original preview image to acquire a second preview image. Next, the second preview image is framed according to the first hue values of the pixels to obtain an image frame. Finally, the image frame is sectioned to recognize the film image.

Abstract: An improved method of forming a dual damascene structure that includes an organosilicate glass (OSG) dielectric layer is described. A via first process is followed in which a via is formed in the OSG layer and preferably stops on a SiC layer. The SiC layer is removed prior to stripping a photoresist containing the via pattern. A planarizing BARC layer is formed in the via to protect the exposed substrate from damage during trench formation. The method provides higher Kelvin via and via chain yields. Damage to the OSG layer at top comers of the via and trench is avoided. Furthermore, there is no pitting in the OSG layer at the trench bottom. Vertical sidewalls are achieved in the via and trench openings and via CD is maintained. The OSG loss during etching is minimized by removing the etch stop layer at an early stage of the dual damascene sequence.

Abstract: A mobile wireless communications device and methods therefore, including receiving a signal (710), storing a portion of the received signal (730), identifying all possible pilot signals by determining slot boundary information for the stored signal portion (720), determining frame boundary information and/or scrambling code information (760) of the stored signal portion by correlating the stored signal portion with the scrambling codes based on the slot boundary information. In other embodiments, the search is performed in real-time without storing the signal.