Abstract: An organic light-emitting diode (OLED) display panel and a method of fabricating the OLED display panel are provided. By providing a gap between a first electrode and an inner wall of the first opening, an organic light-emitting material will only flow into the gap between the first electrode and the inner wall of the first opening through the first opening. In this way, it is difficult for the organic light-emitting material to be sputtered on a contact surface between the first electrode and a cathode, so that display uniformity is enhanced.

Abstract: A device and a method for nondestructively detecting a transient characteristic of a conductive screw of a turbo-generator rotor are provided. The device includes a personal computer (PC), an extremely-steep pulse generator, an ultra-high-frequency double-isolation transformer, and a pulse emitting and coupling module, which are connected in sequence. The pulse emitting and coupling module is connected to a load. A synchronous pulse receiving non-inductive divider circuit synchronously receives a characteristic waveform from the load, and the synchronous pulse receiving non-inductive divider circuit is connected to an ultra-high-speed analog/digital (A/D) module through a nonlinear saturation amplifying circuit that amplifies a signal. The PC receives a signal from the ultra-high-speed A/D module. The load includes a positive or negative excitation lead loop that is in a 180° symmetrical and instantaneous short-circuit state and a rotor shaft.

Abstract: The present application discloses an OLED display panel and a fabrication method of the OLED display panel. In the present application, a first protrusion is provided in the frame area, and then the first protrusion is covered by the first encapsulation part, so that the first encapsulation part can stand firmly above the planarization layer without tilting, thereby improving the sealing of the encapsulation layer and preventing water and oxygen intrusion.

Abstract: A device for detecting a slot wedge, an air gap and a broken rotor bar is provided, where a sequential circuit generates double concurrent pulses; the sequential circuit is connected to driving power modules; the driving power modules are connected to front-end interface circuits; the front-end interface circuits convert the double concurrent pulses into corresponding magnetic-field pulses; the magnetic-field pulses are transmitted to power supply terminals on adjacent phases of stator windings through impedance matching pins and coupled at a corresponding coil, air gap and squirrel cage rotor to generate single groups of cyclic rotating magnetic potentials; single rotating magnetic potentials are sequentially generated in adjacent slots on each of the phases of the stator windings; rotating electric potentials in magnetic circuits with two symmetrical phases are magnetically coupled to form distributed coupling magnetic field reflected full-cycle waves for reflecting a difference of a corresponding slot wedg

Abstract: A device for detecting a slot wedge, an air gap and a broken rotor bar is provided, where a sequential circuit generates double concurrent pulses; the sequential circuit is connected to driving power modules; the driving power modules are connected to front-end interface circuits; the front-end interface circuits convert the double concurrent pulses into corresponding magnetic-field pulses; the magnetic-field pulses are transmitted to power supply terminals on adjacent phases of stator windings through impedance matching pins and coupled at a corresponding coil, air gap and squirrel cage rotor to generate single groups of cyclic rotating magnetic potentials; single rotating magnetic potentials are sequentially generated in adjacent slots on each of the phases of the stator windings; rotating electric potentials in magnetic circuits with two symmetrical phases are magnetically coupled to form distributed coupling magnetic field reflected full-cycle waves for reflecting a difference of a corresponding slot wedg

Abstract: The present disclosure provides a method for fabricating a thin film transistor substrate, which includes: sequentially depositing a light shielding layer pattern, a buffer layer, an active layer pattern, a gate insulating layer, and a gate layer; wet etching the gate layer to form a gate layer pattern with a photoresist; stripping off the photoresist; forming a protective layer covering the gate layer pattern; etching the gate insulating layer to form a gate insulating layer pattern; and metalizing a non-channel region of the active layer pattern. This method can ensure that an orthographic projection of the gate layer pattern on the substrate completely coincides with that of the gate insulating pattern. Therefore, the entire active layer pattern is regulated by the gate layer pattern, thereby improving a turn-on current of a thin film transistor.

Abstract: The present application discloses a display panel and a method of manufacturing the display panel. In the present application, by disposing the drain electrode, the source electrode, and the metal trace electrode on the first electrode layer, the present application reduces at least one source/drain metal layer compared with the prior art, so that the present application can reduce a number of layers of photomasks during the manufacturing process of the display panel, which can effectively reduce the production cycle and production cost of the display panel.

Abstract: A device and a method for nondestructively detecting a transient characteristic of a conductive screw of a turbo-generator rotor are provided. The device includes a personal computer (PC), an extremely-steep pulse generator, an ultra-high-frequency double-isolation transformer, and a pulse emitting and coupling module, which are connected in sequence. The pulse emitting and coupling module is connected to a load. A synchronous pulse receiving non-inductive divider circuit synchronously receives a characteristic waveform from the load, and the synchronous pulse receiving non-inductive divider circuit is connected to an ultra-high-speed analog/digital (A/D) module through a nonlinear saturation amplifying circuit that amplifies a signal. The PC receives a signal from the ultra-high-speed A/D module. The load includes a positive or negative excitation lead loop that is in a 180° symmetrical and instantaneous short-circuit state and a rotor shaft.

Abstract: A thin film transistor substrate and its manufacturing method are provided. The thin film transistor substrate avoids semiconductor defects caused by acid corrosion of a metal oxide channel during an etching process of forming a source/drain electrode, and effectively prevents copper from diffusing downward into the metal oxide channel under high temperature conditions. Such configuration eliminates a need to additionally use a barrier material, reduces production costs, and prevents short-circuiting resulting from a residual barrier material.

Abstract: A thin film transistor substrate and its manufacturing method are provided. The thin film transistor substrate avoids semiconductor defects caused by acid corrosion of a metal oxide channel during an etching process of forming a source/drain electrode, and effectively prevents copper from diffusing downward into the metal oxide channel under high temperature conditions. Such configuration eliminates a need to additionally use a barrier material, reduces production costs, and prevents short-circuiting resulting from a residual barrier material.

Abstract: A manufacturing method of a thin film transistor (TFT) array substrate and a TFT array substrate include forming a gate electrode, a gate insulating layer, and an active layer on a surface of a substrate in order. The active layer includes a channel, a source doped region, and a drain doped region. A protective layer is formed on a surface of the channel, and the source doped region and the drain doped region are made conductive. A source electrode and a drain electrode both are formed on the surface of the substrate, the protective layer is stripped, and a passivation layer is formed on the surface of the substrate.

Abstract: A manufacturing method of a thin-film transistor is provided. The method include: forming a gate pattern layer on a substrate; forming a gate insulating layer covering the gate pattern layer; depositing semi-conductive oxide material on the gate insulating layer to form an active pattern layer on the gate insulating layer; depositing reducing material on the active pattern layer to form a reducing pattern layer; and forming a source pattern layer and a drain pattern layer on the reducing pattern layer. A thin-film transistor is further provided.

Abstract: The invention provides an oxide semiconductor TFT and manufacturing method thereof. The oxide semiconductor TFT comprises: a substrate, a gate on the substrate, a gate insulating layer on the gate and substrate, an oxide semiconductor layer on the gate insulating layer, and a barrier layer on the semiconductor layer, and a source and a drain on the oxide semiconductor layer and gate insulating layer; the oxide semiconductor layer comprising: a channel region and two contact regions respectively located at two sides of the channel region, and the barrier layer being located on the channel region; the channel region comprising a plurality of channel strips spaced apart in a channel width direction, and the barrier layer comprising a plurality of barrier strips respectively corresponding to the plurality of channel strips. The invention can reduce power consumption of the oxide semiconductor TFT and improve and the stability in the winding state.

Abstract: The invention provides an oxide semiconductor TFT and manufacturing method thereof. The oxide semiconductor TFT comprises: a substrate, a gate on the substrate, a gate insulating layer on the gate and substrate, an oxide semiconductor layer on the gate insulating layer, and a barrier layer on the semiconductor layer, and a source and a drain on the oxide semiconductor layer and gate insulating layer; the oxide semiconductor layer comprising: a channel region and two contact regions respectively located at two sides of the channel region, and the barrier layer being located on the channel region; the channel region comprising a plurality of channel strips spaced apart in a channel width direction, and the barrier layer comprising a plurality of barrier strips respectively corresponding to the plurality of channel strips. The invention can reduce power consumption of the oxide semiconductor TFT and improve and the stability in the winding state.

Abstract: A manufacturing method of a thin-film transistor is provided. The method include: forming a gate pattern layer on a substrate; forming a gate insulating layer covering the gate pattern layer; depositing semi-conductive oxide material on the gate insulating layer to form an active pattern layer on the gate insulating layer; depositing reducing material on the active pattern layer to form a reducing pattern layer; and forming a source pattern layer and a drain pattern layer on the reducing pattern layer. A thin-film transistor is further provided.