Patents by Inventor Qimeng AN

Qimeng AN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240113103
    Abstract: An integrated device, a semiconductor device, and an integrated device manufacturing method are provided, to improve capacitor integration density of the integrated device. The integrated device includes: A first dielectric layer is disposed on a first metal layer; the first metal layer, the first dielectric layer, and a gate metal layer on the first dielectric layer form a first capacitor; the gate metal layer, a second dielectric layer on the gate metal layer, and a second metal layer on the second dielectric layer form a second capacitor; and the first metal layer is connected to the second metal layer through a first conductor structure, so that the first capacitor and the second capacitor are connected in parallel.
    Type: Application
    Filed: December 8, 2023
    Publication date: April 4, 2024
    Inventors: Gaofei TANG, Qilong BAO, Hanxing WANG, Qimeng JIANG, Dongfa OUYANG
  • Patent number: 11867578
    Abstract: The present invention discloses a high-precision and miniaturized on-orbit calibration device for a six-dimensional force sensor of a space station manipulator and a calibration method thereof, which include an inverted ? shape fixing bracket, three force applying devices, and a cubic stress block. Each force applying device includes a force applying head, a single axis force sensor, a force source part and a fastening part. The force source part includes an upper support plate, a second electrode plate, piezoelectric ceramic plates, a first electrode plate and a lower support plate, which are coaxially arranged sequentially from top to bottom. The single axis force sensor is mounted on the top of the upper support plate, and the hemispherical force applying head is mounted on the top of the single axis force sensor. The cubic stress block is mounted on the top of the six-dimensional force sensor.
    Type: Grant
    Filed: February 1, 2021
    Date of Patent: January 9, 2024
    Assignee: SOUTHEAST UNIVERSITY
    Inventors: Aiguo Song, Shuyan Yang, Baoguo Xu, Yonghui Zhou, Qimeng Tan, Changchun Liang, Ming Wei, Chunhui Wang, Fan Li, Suinan Zhang
  • Publication number: 20230420537
    Abstract: A field effect transistor includes a channel layer, a source, a drain, a gate structure, and a gate metal layer; and the gate structure includes a P-type gallium nitride layer and an N-type gallium nitride layer that are disposed in a stacking manner, so that a gate metal/pGaN Schottky diode is replaced with an nGaN/pGaN reverse bias diode, to improve a gate voltage-withstand capability of the field effect transistor, thereby improving a breakdown capability of the field effect transistor. A doping density of the P-type gallium nitride layer is between 1×1018 cm?3 and 1×1019 cm?3, so that a charge storage effect during operation of a device can be reduced, carriers at the pGaN layer can be exhausted as much as possible, and redundant-charge storage is avoided, thereby improving operating threshold voltage stability of the device.
    Type: Application
    Filed: September 8, 2023
    Publication date: December 28, 2023
    Inventors: Qilong BAO, Qimeng JIANG, Gaofei TANG, Hanxing WANG, Gilberto CURATOLA
  • Patent number: 11854284
    Abstract: The invention provides an offline handwriting individual recognition system and method based on two-dimensional dynamic features.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: December 26, 2023
    Inventors: Xiaohong Chen, Xu Yang, Yachen Wang, Nan Wang, Qimeng Lu
  • Publication number: 20230411486
    Abstract: The disclosure relates to a Gallium Nitride power transistor, comprising: a buffer layer; and a barrier layer having a top side, a bottom side, the bottom side facing the buffer layer, the bottom side of the barrier layer is placed on the buffer layer; an interlayer interposed between a p-type doped Gallium Nitride layer and a metal gate layer, the interlayer is made of a III-V compound semiconductor comprising a combination of at least one group III element with at least one group V element, the p-type doped Gallium Nitride layer is placed on the top side of the barrier layer, the metal gate layer is electrically connected to the p-type doped Gallium Nitride layer via the interlayer to form a rectifying metal-semiconductor junction with the p-type doped Gallium Nitride layer.
    Type: Application
    Filed: September 1, 2023
    Publication date: December 21, 2023
    Inventors: Gilberto Curatola, Qilong Bao, Qimeng Jiang, Gaofei Tang, Hanxing Wang
  • Publication number: 20230383904
    Abstract: An automatic dropping lubricating device comprises a tank body, a stirring mechanism, a filter mechanism and an intermittent mechanism, a drive motor is fixedly connected to the middle of the right side wall of the tank body, the stirring mechanism is rotationally connected to the middle of an inner cavity of the tank body, the filter mechanism is fixedly connected to the middle of a charging pipe, and the intermittent mechanism is arranged on the right side of the bottom of the tank body. The invention drives a telescopic rod to rotate so that the telescopic rod props against a trigger slider for sliding and the trigger slider drives a movable plate to slide; when the movable plate slides, a connecting pipe slides in a second chute, and finally the connecting pipe is connected to a dropping port while a dropping pipe is connected to the connecting pipe.
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Inventors: Tao Lin, Liang Chu, Qimeng Zhang
  • Patent number: 11809638
    Abstract: The present disclosure relates to a method and an apparatus for controlling a screen display content of a display terminal, an electronic device, and a computer-readable storage medium, which belongs to the field of image display technology. The method includes: acquiring angular acceleration data collected by a motion sensor in a terminal device, and determining a movement trajectory of the terminal device according to the angular acceleration data; determining an operation instruction corresponding to the movement trajectory of the terminal device according to a preset mapping relationship between the movement trajectory and the operation instruction; and sending the operation instruction to control a screen of the display terminal to switch the display content.
    Type: Grant
    Filed: July 19, 2019
    Date of Patent: November 7, 2023
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xiaomin Wang, Wei Liang, Qimeng Sun
  • Publication number: 20230344897
    Abstract: Methods and systems for cloud computing service integration with an end-user application are described. The methods receive connection information necessary to connect to a cloud platform, the cloud platform being an architecture hosting the cloud computing services, and request, at runtime by submitting the connection information to the cloud platform, endpoint information of one or more components hosted by the cloud platform. The methods then receive, from the cloud platform, in response to the submitted connection information, endpoint information of the one or more components hosted by the cloud platform. The endpoint information includes at least parameters required to invoke the one or more components. The methods also generate metadata for each component of the one or more components, the metadata of each component comprising endpoint information enabling the end-user application to invoke the respective component of the cloud platform. The systems are configured to implement the described methods.
    Type: Application
    Filed: June 30, 2023
    Publication date: October 26, 2023
    Inventors: Jin Rong LUO, Eugene CHAN, Ming CHEN, Reji MATHEWS, Qimeng WEI, Guanglin LV
  • Patent number: 11798432
    Abstract: The present disclosure provides an experiment platform for simulating fire in an underground traffic conversion channel, including: a model body configured to simulate fire in the an underground traffic conversion channel; a burner connected to the model body and configured to generate smoke; and a smoke imaging system including laser sheet light sources and image recording devices configured to record smoke distribution images. The laser sheet light sources are in the model body, and plane laser light emitted by the laser sheet light sources is parallel to a flow direction of the smoke. The image recording devices are in one-to-one correspondence to the laser sheet light sources and are arranged outside an observation window of the model body. One laser sheet light source and one image recording device corresponding thereto each have a filter configured to filter out laser light of a same wavelength.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: October 24, 2023
    Assignee: ZHEJIANG UNIVERSITY
    Inventors: Ke Wu, Tianhang Zhang, Mingjian Yin, Yunge Hou, Kaijie Wu, Chunhou Luo, Qimeng Guo, Xun Zhang, Xiaolong Yan, Yadong Huang
  • Patent number: 11791627
    Abstract: An ESD protection circuit is provided, including a negative ESD protection module and a positive ESD protection module, where the negative ESD protection module includes a first resistor, a charging capacitor, a first field effect transistor, and a second field effect transistor, and the positive ESD protection module includes a fourth field effect transistor. When a negative ESD event occurs, there is a comparatively large transient voltage at a gate of a P-type enhanced GaN power device relative to a source of the P-type enhanced GaN power device. Therefore, a displacement current from the source to the gate of the P-type enhanced GaN power device is generated on the charging capacitor. A voltage drop generated by the displacement current on the first resistor may enable the first field effect transistor and the second field effect transistor to form a path when the first field effect transistor is turned on.
    Type: Grant
    Filed: July 12, 2022
    Date of Patent: October 17, 2023
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Qimeng Jiang, Yushan Li, Hanxing Wang
  • Publication number: 20230245501
    Abstract: The present invention provides an offline handwriting individual recognition system and method. The method comprises: scanning the suspicious handwriting to obtain a first white light image and a first three-dimensional image, and scanning the sample handwriting to obtain a second white light image and a second three-dimensional image; pre-processing the first white light image and the second white light image to obtain a first pre-processed image and a second pre-processed image; extracting a first skeleton image and a second skeleton image from the first pre-processed image and the second pre-processed image; obtaining a first writing trajectory and a second writing trajectory according to the first skeleton image and the second skeleton image; extracting a first dynamic feature, a first three-dimensional feature, and a second dynamic feature, a second three-dimensional feature; processing to obtain a correlation coefficient, and obtaining an individual recognition result.
    Type: Application
    Filed: November 29, 2019
    Publication date: August 3, 2023
    Inventors: Xiaohong CHEN, Xu YANG, Yachen WANG, Nan WANG, Qimeng LU
  • Patent number: 11705494
    Abstract: This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer. A Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit.
    Type: Grant
    Filed: March 15, 2022
    Date of Patent: July 18, 2023
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Boning Huang, Zhaozheng Hou, Qimeng Jiang
  • Publication number: 20230197085
    Abstract: Embodiments include methods for voice/speech recognition in noisy environments executed by a processor of a computing device. In various embodiments, voice or speech recognition may be executed by a processor of a computing device, which may include determining a voice recognition model to use for voice and/or speech recognition based on a location where an audio input is received and performing voice and/or speech recognition on the audio input using the determined voice recognition model. Some embodiments my receive from a computing device, an audio input and location information associated with a location where the audio input was recorded. The received audio input may be used to generate a voice recognition model associated with the location where the audio input was recorded for use in voice and/or speech recognition. The generated voice recognition model associated with the location may be provided to the computing device.
    Type: Application
    Filed: June 22, 2020
    Publication date: June 22, 2023
    Inventors: Xiaoxia DONG, Jun WEI, Qimeng PAN
  • Publication number: 20230187523
    Abstract: This application provides a hybrid gate field effect transistor, a method for preparing the hybrid gate field effect transistor, and a switch circuit. The hybrid gate field effect transistor includes a channel layer, and a source, a drain, and a gate structure disposed on the channel layer. The gate structure is a hybrid gate structure prepared from two materials. The gate structure includes a first structural layer and a second structural layer. The second structural layer wraps the first structural layer. The first structural layer is an N-type gallium nitride layer or an intrinsic gallium nitride layer; and the second structural layer is a P-type gallium nitride layer. The gate metal layer is disposed on one side of the gate structure facing away from the channel layer, and the gate metal layer is in ohmic contact with the first structural layer.
    Type: Application
    Filed: February 8, 2023
    Publication date: June 15, 2023
    Inventors: Ruihong LUO, Boning HUANG, Hui SUN, Qimeng JIANG, Qilong BAO, Zhibin CHEN
  • Publication number: 20230177857
    Abstract: The invention provides an offline handwriting individual recognition system and method based on two-dimensional dynamic features.
    Type: Application
    Filed: August 22, 2019
    Publication date: June 8, 2023
    Inventors: Xiaohong CHEN, Xu YANG, Yachen WANG, Nan WANG, Qimeng LU
  • Patent number: 11669872
    Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for broadcasting audio. In one aspect, the method includes receiving, from a server by a smart broadcasting device associated with a service client, an audio broadcast instruction; in response to receiving the audio broadcast instruction, downloading an audio file corresponding to the audio broadcast instruction, wherein the audio file comprises a marketing content related to services provided by the server to the service client associated with the smart broadcasting device; and broadcasting, by the smart broadcasting device, the audio file by using a speaker of the smart broadcasting device.
    Type: Grant
    Filed: August 10, 2021
    Date of Patent: June 6, 2023
    Assignee: Advanced New Technologies Co., Ltd.
    Inventors: Qimeng Zou, Jiankang Sun, Yao Qin, Linqing Wang
  • Publication number: 20230160937
    Abstract: A frequency measurement system and method of a radio frequency (RF) signal. The frequency measurement system includes: a magnetic field source module, a light source module, an excitation module, a complementary metal-oxide-semiconductor (CMOS) camera, and a signal processing module; the excitation module is disposed in the magnetic field; the excitation module is disposed on an output light path of the light source module; the CMOS camera is disposed on an output light path of the excitation module; and the CMOS camera is connected to the signal processing module; the light source module is configured to emit a laser; the CMOS camera is configured to capture an excitation image when the laser enters the excitation module to which a to-be-tested RF signal is applied; and the signal processing module is configured to determine a frequency of the to-be-tested RF signal according to the excitation image.
    Type: Application
    Filed: March 14, 2022
    Publication date: May 25, 2023
    Applicant: North University of China
    Inventors: Jun LIU, Zongmin MA, Jun TANG, Yunbo SHI, Hao GUO, Zhonghao LI, Xiaocheng WANG, Junzhi ZHAO, Doudou ZHENG, Qimeng WANG
  • Patent number: 11656259
    Abstract: A frequency measurement system and method of a radio frequency (RF) signal. The frequency measurement system includes: a magnetic field source module, a light source module, an excitation module, a complementary metal-oxide-semiconductor (CMOS) camera, and a signal processing module; the excitation module is disposed in the magnetic field; the excitation module is disposed on an output light path of the light source module; the CMOS camera is disposed on an output light path of the excitation module; and the CMOS camera is connected to the signal processing module; the light source module is configured to emit a laser; the CMOS camera is configured to capture an excitation image when the laser enters the excitation module to which a to-be-tested RF signal is applied; and the signal processing module is configured to determine a frequency of the to-be-tested RF signal according to the excitation image.
    Type: Grant
    Filed: March 14, 2022
    Date of Patent: May 23, 2023
    Assignee: North University of China
    Inventors: Jun Liu, Zongmin Ma, Jun Tang, Yunbo Shi, Hao Guo, Zhonghao Li, Xiaocheng Wang, Junzhi Zhao, Doudou Zheng, Qimeng Wang
  • Patent number: 11621375
    Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).
    Type: Grant
    Filed: October 7, 2017
    Date of Patent: April 4, 2023
    Assignee: Xiamen Changelight Co., Ltd.
    Inventors: Yingce Liu, Bin Song, Junxian Li, Qilong Wu, Yang Wang, Kaixuan Chen, Zhendong Wei, Xingen Wu, Hongyi Zhou, Lihe Cai, Xinmao Huang, Zhiwei Lin, Yongtong Li, Qimeng Lyu, Hexun Cai, Gengcheng Li
  • Patent number: D1004184
    Type: Grant
    Filed: September 7, 2021
    Date of Patent: November 7, 2023
    Inventors: Qimeng Dai, Xiaozhong Li