Patents by Inventor Qin-Yi Tong
Qin-Yi Tong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080187757Abstract: A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.Type: ApplicationFiled: December 17, 2007Publication date: August 7, 2008Applicant: Ziptronix, Inc.Inventor: Qin-Yi TONG
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Patent number: 7387944Abstract: A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. One etching process The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.Type: GrantFiled: August 9, 2004Date of Patent: June 17, 2008Assignee: Ziptronix, Inc.Inventors: Qin-Yi Tong, Gaius Gillman Fountain, Jr., Paul M. Enquist
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Publication number: 20080063878Abstract: A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. One etching process The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.Type: ApplicationFiled: October 31, 2007Publication date: March 13, 2008Applicant: Ziptronix, Inc.Inventors: Qin-Yi Tong, Gaius Fountain, Paul Enquist
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Publication number: 20080053959Abstract: A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. One etching process The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.Type: ApplicationFiled: October 31, 2007Publication date: March 6, 2008Applicant: Ziptronix, Inc.Inventors: Qin-Yi Tong, Gaius Fountain, Paul Enquist
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Patent number: 7335572Abstract: A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.Type: GrantFiled: January 23, 2004Date of Patent: February 26, 2008Assignee: Ziptronix, Inc.Inventors: Qin-Yi Tong, Gaius Gillman Fountain, Jr., Paul M. Enquist
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Patent number: 7335996Abstract: A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.Type: GrantFiled: May 30, 2006Date of Patent: February 26, 2008Assignee: Ziptronix, Inc.Inventor: Qin-Yi Tong
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Patent number: 7332410Abstract: A process for bonding oxide-free silicon substrate pairs and other substrates at low temperature. This process involves modifying the surface of the silicon wafers to create defect regions, for example by plasma-treating the surface to be bonded with a or boron-containing plasmas such as a B2H6 plasma. The surface defect regions may also be created by ion implantation, preferably using boron. The surfaces may also be amorphized. The treated surfaces are placed together, thus forming an attached pair at room temperature in ambient air. The bonding energy reaches approximately 400 mJ/m2 at room temperature, 900 mJ/m2 at 150° C., and 1800 mJ/m2 at 250° C. The bulk silicon fracture energy of 2500 mJ/m2 was achieved after annealing at 350-400° C. The release of hydrogen from B—H complexes and the subsequent absorption of the hydrogen by the plasma induced modified layers on the bonding surfaces at low temperature is most likely responsible for the enhanced bonding energy.Type: GrantFiled: February 5, 2003Date of Patent: February 19, 2008Assignee: Ziptronix, Inc.Inventor: Qin-Yi Tong
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Publication number: 20070232023Abstract: A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.Type: ApplicationFiled: June 5, 2007Publication date: October 4, 2007Applicant: Ziptronix, Inc.Inventors: Qin-Yi Tong, Paul Enquist, Anthony Rose
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Publication number: 20070037379Abstract: A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface. Alternatively, first and/or second contact structures are not exposed at bonding, and a via is etched and filled after bonding to electrically interconnect first and second contact structures and provide electrical access to interconnected first and second contact structure to a surface.Type: ApplicationFiled: August 11, 2005Publication date: February 15, 2007Applicant: ZiptronixInventors: Paul Enquist, Gaius Fountain, Qin-Yi Tong
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Publication number: 20060264004Abstract: A method for detachable bonding that forms an amorphous silicon layer, or a silicon oxide layer with a high hydrogen content, on an element such as a carrier substrate. A second element, such as a substrate, is bonded to the amorphous silicon layer or silicon oxide layer, and the second element may then have a portion removed. A third element, such as a host or carrier substrate, is bonded to the second element or to the remaining portion of the second element to form a bonded structure. The bonded structure is then heated to cause the first element to detach from the bonded structure.Type: ApplicationFiled: May 23, 2005Publication date: November 23, 2006Applicant: Ziptronix, Inc.Inventors: Qin-Yi Tong, Gaius Fountain
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Publication number: 20060216904Abstract: A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.Type: ApplicationFiled: May 30, 2006Publication date: September 28, 2006Applicant: Ziptronix, Inc.Inventor: Qin-Yi Tong
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Patent number: 7109092Abstract: A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.Type: GrantFiled: May 19, 2003Date of Patent: September 19, 2006Assignee: Ziptronix, Inc.Inventor: Qin-Yi Tong
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Patent number: 7041178Abstract: A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.Type: GrantFiled: June 13, 2003Date of Patent: May 9, 2006Assignee: Ziptronix, Inc.Inventors: Qin-Yi Tong, Gaius Gillman Fountain, Jr., Paul M. Enquist
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Patent number: 6962835Abstract: A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.Type: GrantFiled: February 7, 2003Date of Patent: November 8, 2005Assignee: Ziptronix, Inc.Inventors: Qin-Yi Tong, Paul M. Enquist, Anthony Scot Rose
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Publication number: 20050161795Abstract: A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.Type: ApplicationFiled: March 22, 2005Publication date: July 28, 2005Applicant: ZiptronixInventors: Qin-Yi Tong, Paul Enquist, Anthony Rose
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Patent number: 6902987Abstract: A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. One etching process the method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.Type: GrantFiled: February 16, 2000Date of Patent: June 7, 2005Assignee: Ziptronix, Inc.Inventors: Qin-Yi Tong, Gaius Gillman Fountain, Jr., Paul M. Enquist
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Publication number: 20050079712Abstract: A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. One etching process The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.Type: ApplicationFiled: August 9, 2004Publication date: April 14, 2005Applicant: Ziptronix, Inc.Inventors: Qin-Yi Tong, Gaius Fountain, Paul Enquist
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Publication number: 20050009246Abstract: A method for providing encapsulation of an electronic device which obtains an encapsulating member configured to enclose the electronic device, prepares a surface of the encapsulating member for non-adhesive direct bonding, prepares a surface of a device carrier including the electronic device for non-adhesive direct bonding, and bonds the prepared surface of the encapsulating member to the prepared surface of the device carrier to form an encapsulation of the electronic device. As such, an encapsulated electronic device results which includes the device carrier having a first bonding region encompassing the electronic device, includes the encapsulating member having at least one relief preventing contact between the electronic device and the encapsulating member and having a second bonding region bonded to the first bonding region of the device carrier, and includes a non-adhesive direct bond formed between the first and second bonding regions thereby to form an encapsulation of the electronic device.Type: ApplicationFiled: August 9, 2004Publication date: January 13, 2005Applicant: Ziptronix, Inc.Inventors: Paul Enquist, Qin-Yi Tong, Gaius Fountain, Robert Markunas
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Publication number: 20040235266Abstract: A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.Type: ApplicationFiled: May 19, 2003Publication date: November 25, 2004Applicant: Ziptronix, Inc.Inventor: Qin-Yi Tong
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Patent number: 6822326Abstract: A method for providing encapsulation of an electronic device which obtains an encapsulating member configured to enclose the electronic device, prepares a surface of the encapsulating member for non-adhesive direct bonding, prepares a surface of a device carrier including the electronic device for non-adhesive direct bonding, and bonds the prepared surface of the encapsulating member to the prepared surface of the device carrier to form an encapsulation of the electronic device. As such, an encapsulated electronic device results which includes the device carrier having a first bonding region encompassing the electronic device, includes the encapsulating member having at least one relief preventing contact between the electronic device and the encapsulating member and having a second bonding region bonded to the first bonding region of the device carrier, and includes a non-adhesive direct bond formed between the first and second bonding regions thereby to form an encapsulation of the electronic device.Type: GrantFiled: September 25, 2002Date of Patent: November 23, 2004Assignee: ZiptronixInventors: Paul M. Enquist, Qin-Yi Tong, Gaius Gillman Fountain, Jr., Robert Markunas