Abstract: A power converter, short circuit protection circuit, and control method are disclosed herein. The power converter is configured to generate an output voltage and includes a semiconductor switch, a short circuit protection circuit, and a signal processing module. The semiconductor switch is configured to adjust the output voltage according to a driving signal. The short circuit protection circuit is configured to generate a short circuit protecting signal according to a control signal and a short circuit status of the semiconductor switch. The signal processing module is configured to generate the control signal and the driving signal according to a modulating signal, and to turn off the semiconductor switch according to the short circuit protecting signal. A delay duration is present between the modulating signal and the control signal, and the semiconductor switch is turned on during the delay duration.

Abstract: A branched stent graft, a convey system comprising thereof and manufacturing method thereof, the branched stent graft includes a main body (100) and a side branch (200), at least a portion of a lowermost stent section of the side branch (200) closest to the main body (100) is not stitched to the cover of the side branch from a lower end to an upper end, the at least a portion of the lowermost stent section is located on a side of the side branch corresponding to a folding direction of the side branch. After deployed, the branched stent graft has an effective supporting force at the base portion of the side branch. In addition, during the deployment of the stent, the side branch can expand to a maximal extent even when the positioning is slightly inaccurate. Further, vascular stenosis or occlusion will not be caused even when subsequent endothelialization occurs.

Abstract: A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

Abstract: A mobile network operator (MNO) may control WiFi QoS. 3GPP has specified control mechanisms for various levels of quality of service (QoS) over the cellular access and core network. Embodiments described herein provide differentiation of WiFi QoS based on MNO requirements. In particular, extensible authentication protocol (EAP) and diameter messages may be extended to include a wireless local area network QoS parameter. This may be used by user equipment to set the uplink 802.11e User Priority (UP) for offloaded or evolved packet core-routed WiFi traffic.

Abstract: A physical computer keyboard which includes: a circuit board having touchpoints; physical programmable, pluggable keys such that each of the keys is programmable to provide the function of each of the keys, each of the keys having interlocking elements to join with an adjoining key, each key having connectors on a bottom surface of each key to make electrical contact with the touchpoints; and display panels with one display panel on a top surface of each key, the function of each key being displayed on the display panel of each key.

Abstract: Methods for treating solid metallocene compounds that are exposed to air are disclosed. These methods include a step of contacting the exposed solid metallocene compound with a purging gas stream containing an inert gas, and optionally, subjecting the exposed solid metallocene compound to a sub-atmospheric pressure.

Abstract: A scissor structure for a key of a keyboard includes an inner scissor and an outer scissor, wherein the inner scissor is fixedly connected with the outer scissor through an elastic connecting pin; when the key is pressed, the inner scissor and the outer scissor are pressed therewith, and drive the elastic deformation of the connecting pin; when the key is loosened, the inner scissor and the outer scissor are restored to an initial state under the elastic restoring force of the connecting pin, so as to transmit the key.

Abstract: A method for fabricating a semiconductor structure. The method includes providing a substrate and forming a plurality of fin structures on the substrate. Each fin structure includes a first side and a second side opposite to the first side. The method further includes forming a first doped region containing first doping ions in a portion of the substrate on the first side of each gate structure, and forming a second doped region containing second doping ions in a portion of the substrate on the second side of each gate structure. The ion concentration of the second doping ions in the second doped region is smaller than the ion concentration of the first doping ions in the first doped region, and the atomic weight of the second doping ions is smaller than the atomic weight of the first doping ions.

Abstract: A phase change memory and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a heating layer on the substrate; forming a phase change layer on and in contact with one sidewall surface of the heating layer. The phase change memory includes: a substrate; a heating layer on the substrate; and a phase change layer on and in contact with one sidewall surface of the heating layer.

Abstract: A batch of CRUD operations can be coupled with the resource discovery operation and directly conducted on the matched resources, without initiating new CRUD requests. New functionality at the Originator and Receiver can differentiate the resources for which criteria matching is applied from the resources included in the discovery/filtering results. Enhanced functionality at the Originator and Receiver can combine discovery with RESTful operations targeting a resource set different than but related the discovered resources. Other enhancements may be used to research discovery rights of resources in a specified relationship to those matching a filter, or to request group formation based on the result.

Abstract: A reciprocating treatment device. The reciprocating treatment device includes a housing, a motor connected to the housing, and an actuated output. The housing includes a handle located on the housing. The handle has a handle axis. The actuated output is operably connected to the motor. The actuated output is configured to reciprocate in response to activation of the motor. Reciprocation of the actuated output is along a reciprocation axis. The motor includes a shaft having a shaft rotation axis. The shaft rotation axis is parallel to a plane in which the handle axis and the reciprocation axis are located.

Abstract: A key structure of a keyboard includes a keycap, a scissor connecting mechanism, a conductive circuit board and a bottom plate from top to bottom, wherein a projection is arranged between the scissor connecting mechanism and the conductive circuit board; when an optional position of the periphery of the keycap is pressed, the scissor connecting mechanism is in contact with the projection before the conductive circuit board or the bottom plate below the scissor connecting mechanism; and if the optional position of the periphery of the keycap continues being pressed, the scissor connecting mechanism positioned on one side of the pressed point is bent and deformed by using the projection as a fulcrum and is in contact with the conductive circuit board.

Abstract: A glass for chemical strengthening contains, in mole percentage on an oxide basis, 58 to 72% of SiO2, 7 to 18% of Al2O3, 1% or more of B2O3, 0 to 4% of P2O5, 5 to 16% of Li2O, 0 to 7% of Na2O, 0 to 2% of K2O, 0 to 6% of MgO, 0 to 20% of CaO, 0 to 20% of SrO, 0 to 15% of BaO, 0 to 10% of ZnO, 0 to 1% of TiO2, and 0 to 2% of ZrO2. A value of X is 30000 or more. The value of X is calculated based on the formula, X=SiO2×329+Al2O3×786+B2O3×627+P2O5×(?941)+Li2O×927+Na2O×47.5+K2O×(?371)+MgO×1230+CaO×1154+SrO×733+ZrO2×51.8, by using the contents in mole percentage on an oxide basis of components.

Abstract: A system maintains, generates, and manages infrastructure layouts. The infrastructure layouts include structural relationships for the handling of received sensor data. The infrastructure layouts may be traversed to determine datastore options for the sensor data and contextual information that may be used to enrich the received sensor data.

Abstract: A medical intensive care system includes one or more signal sampling devices to detect at least one physiological parameter and parameter data corresponding thereto; memory to store the parameter data, and provide historical parameter data by storing the parameter data in a chronological order; a processor to process the historical parameter data to obtain a plurality types of data in an intensive care time interval; a display to display the plurality types of the data and current parameter data, comparatively, and update, when a historical intensive care time interval is adjusted, the plurality types of the data according to a change in the time interval.

Abstract: A system for evaluating all functions of a mobile phone to benefit recycling purposes includes a robotic arm assembly, a camera test device, a touch test device, and a 3D Touch test device. The camera test device has a backlight screen and a target picture. The touch test device has at least one first stylus for applying input to a touch screen of a mobile phone. The 3D Touch test device has at least one second stylus for applying strong presses to the touch screen of the mobile phone. The robotic arm assembly can also move the mobile phone to enable image-capturing. A method for functionality-testing is also provided.

Abstract: The present disclosure provides a backlight structure and a liquid crystal display device. The backlight structure comprises: an array substrate; a polarizer layer on a back face of the array substrate; and a light source at a light incident side of the array substrate. Specifically, the light source is configured such that light emitted thereby is emitted into the array substrate from the light incident side of the array substrate and incident on the polarizer layer. Moreover, the polarizer layer is configured for reflecting the light incident thereon while polarizing the reflected light and emitting it out from a front face of the array substrate, wherein the front face and the back face of the array substrate face each other and intersect the light incident side of the array substrate respectively.

Abstract: A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.

Abstract: The present invention provides a backlight module, including a plastic frame, a light guide plate, a reflective sheet, a backlight lamp and an optical film, wherein the light guide plate and the optical film are sequentially overlapped and disposed on the reflective sheet; the plastic frame surrounds the light guide plate and the optical film, and a peripheral edge of the plastic frame is provided and received with the backlight lamp; the backlight module also includes a quantum dot film; an inner circumferential surface of the plastic frame is provided with a green compensation layer; the backlight lamp is located between a light incident surface of the light guide plate and the plastic frame; the quantum dot film is overlapped on the light guide plate, and is located between the light guide plate and the optical film. A display panel is also disclosed.

Abstract: A transistor device includes an array of fin structures arranged on a substrate, each of the fin structures being vertically alternating stacks of a first isoelectric point material having a first isoelectric point and a second isoelectric point material having a second isoelectric point that is different than the first isoelectric point; one or more carbon nanotubes (CNTs) suspended between the fin structures and contacting a side surface of the second isoelectric point material in the fin structures; a gate wrapped around the array of CNTs; and source and drain contacts arranged over the fin structures; wherein each of the fin structures have a trapezoid shape or parallel sides that are oriented about 90° with respect to the substrate.