Abstract: Provided is a compound of formula I or a pharmaceutically acceptable salt, enantiomer, diastereomer, tautomer, solvate, isotopic substituent, polymorph, prodrug, or metabolite thereof. Also provided is a method for preparing the compound of formula I. The compound of formula I has higher inhibitory activity against SHP2, and thus can be used to prevent or treat a disease related to SHP2.

Abstract: A multi-crop adaptive seed delivery and uniform seed distribution device, including: a seed storage box, a seed metering mechanism, a seed distributor lower housing, a seed distributor upper housing, and a blade driving mechanism. Closed accommodating cavity is formed between the seed distributor upper and lower housing; N seed guide tubes are arranged in circumferential direction, N being positive integer equal to or greater than 2; N blades are rotatably mounted in accommodating cavity; blades are arranged in vertical direction; closed independent seed guide cavity is divided in accommodating cavity by two adjacent blades; upper end of each seed guide tube is connected with corresponding seed guide cavity; top of seed distributor upper housing is divided into N fan-shaped areas in circumferential direction; upper end of each blade is connected to edge of corresponding fan-shaped area by means of elastic piece; and collision sensor is provided in each fan-shaped area.

Abstract: A photovoltaic device including a photovoltaic cell and method of use is disclosed. The photovoltaic cell includes at least a first photovoltaic layer and a second photovoltaic layer arranged in a stack. The first photovoltaic layer has a first thickness and receives light at its top surface. A second photovoltaic layer has a second thickness and is disposed beneath the first photovoltaic layer and receives light passing through the first photovoltaic layer. The first thickness and the second thickness are selected so that a first light absorption at the first photovoltaic layer is equal to a second light absorption at the second photovoltaic layer. The photovoltaic cell is irradiated at its top surface with monochromatic light to generate a current.

Abstract: Disclosed are tricyclic compounds as bromodomain and extra-terminal (BET) inhibitors which are shown as formula I, their synthesis and their use for treating diseases. More particularly, disclosed are fused heterocyclic derivatives useful as inhibitors of BET, methods for producing such compounds and methods for treating diseases and conditions wherein inhibition of one or more BET bromodomains provides a benefit.

Abstract: Disclosed are tricyclic compounds as bromodomain and extra-terminal (BET) inhibitors which are shown as formula I, their synthesis and their use for treating diseases. More particularly, disclosed are fused heterocyclic derivatives useful as inhibitors of BET, methods for producing such compounds and methods for treating diseases and conditions wherein inhibition of one or more BET bromodomains provides a benefit.

Abstract: A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gallium arsenide substrate, a thiourea-based passivation layer in contact with at least a top surface of the gallium arsenide substrate, and a capping layer in contact with the thiourea-based passivation layer. The method includes passivating a gallium arsenide substrate utilizing thiourea to form a passivation layer in contact with at least a top surface of the gallium arsenide substrate. The method further includes forming a capping layer in contact with at least a top surface of the passivation layer, and annealing the capping layer and the passivation layer.

Abstract: Disclosed are tricyclic compounds as bromodomain and extra-terminal (BET) inhibitors which are shown as formula I, their synthesis and their use for treating diseases. More particularly, disclosed are fused heterocyclic derivatives useful as inhibitors of BET, methods for producing such compounds and methods for treating diseases and conditions wherein inhibition of one or more BET bromodomains provides a benefit.

Abstract: A motor-driven single-seed-ejection sowing device includes a housing, a seed metering roller, a seed brush, a seed metering mechanism and a power mechanism. The housing includes a power compartment and a seed compartment. The surface of the seed metering roller is provided with seed grooves having spaces for accommodating a single seed. The seed metering mechanism includes a spring, a striking tube, a piston and the piston tube. The piston and the piston tube are arranged for axial movement inside the striking tube. The power mechanism includes a control unit and a drive unit. The control unit includes the motor, the drive panel, the Hall sensor and the magnet. The magnet is set on the striking tube. The Hall sensor and the drive panel are connected to the motor, and the motor drives the seed metering roller and seed metering mechanism by the drive unit.

Abstract: A motor-driven single-seed-ejection sowing device includes a housing, a seed metering roller, a seed brush, a seed metering mechanism and a power mechanism. The housing includes a power compartment and a seed compartment. The surface of the seed metering roller includes seed grooves having spaces for accommodating a single seed. The seed metering mechanism includes a spring, a striking tube, a piston and the piston tube. The piston and the piston tube are arranged for axial movement inside the striking tube. The power mechanism includes a control unit and a drive unit. The control unit includes the motor, the drive panel, the Hall sensor and the magnet. The magnet is set on the striking tube. The Hall sensor and the drive panel are connected to the motor, and the motor drives the seed metering roller and seed metering mechanism by the drive unit.

Abstract: An object of this disclosure is to provide a technology for providing 3D reading scenarios. The technology includes: acquiring, in a VR reading mode, corresponding 3D scenario information based on a literature work currently read by a user; and establishing, in cooperation with VR glasses, a 3D reading scenario for the literature work based on the 3D scenario information. Compared with the existing technologies, this disclosure can acquire the corresponding 3D scenario information based on the literature work, and establish the 3D reading scenario for the literature work using the 3D scenario information. Moreover, this disclosure in cooperation with VR glasses further realizes an immersed reading experience by reading literature works in a 3D scenario. This not only improves the monotone disadvantage of the traditional reading scenario, but also brings users into an immersed reading environment in the reading process, and greatly enhances the users' reading experience.

Abstract: A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gallium arsenide substrate, a thiourea-based passivation layer in contact with at least a top surface of the gallium arsenide substrate, and a capping layer in contact with the thiourea-based passivation layer. The method includes passivating a gallium arsenide substrate utilizing thiourea to form a passivation layer in contact with at least a top surface of the gallium arsenide substrate. The method further includes forming a capping layer in contact with at least a top surface of the passivation layer, and annealing the capping layer and the passivation layer.

Abstract: A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gallium arsenide substrate, a thiourea-based passivation layer in contact with at least a top surface of the gallium arsenide substrate, and a capping layer in contact with the thiourea-based passivation layer. The method includes passivating a gallium arsenide substrate utilizing thiourea to form a passivation layer in contact with at least a top surface of the gallium arsenide substrate. The method further includes forming a capping layer in contact with at least a top surface of the passivation layer, and annealing the capping layer and the passivation layer.

Abstract: Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.

Abstract: An object of this disclosure is to provide a technology for providing 3D reading scenarios. The technology includes: acquiring, in a VR reading mode, corresponding 3D scenario information based on a literature work currently read by a user; and establishing, in cooperation with VR glasses, a 3D reading scenario for the literature work based on the 3D scenario information. Compared with the existing technologies, this disclosure can acquire the corresponding 3D scenario information based on the literature work, and establish the 3D reading scenario for the literature work using the 3D scenario information. Moreover, this disclosure in cooperation with VR glasses further realizes an immersed reading experience by reading literature works in a 3D scenario. This not only improves the monotone disadvantage of the traditional reading scenario, but also brings users into an immersed reading environment in the reading process, and greatly enhances the users' reading experience.

Abstract: A photovoltaic device including a photovoltaic cell and method of use is disclosed. The photovoltaic cell includes at least a first photovoltaic layer and a second photovoltaic layer arranged in a stack. The first photovoltaic layer has a first thickness and receives light at its top surface. A second photovoltaic layer has a second thickness and is disposed beneath the first photovoltaic layer and receives light passing through the first photovoltaic layer. The first thickness and the second thickness are selected so that a first light absorption at the first photovoltaic layer is equal to a second light absorption at the second photovoltaic layer. The photovoltaic cell is irradiated at its top surface with monochromatic light to generate a current.

Abstract: A photovoltaic device including a photovoltaic cell and method of use is disclosed. The photovoltaic cell includes at least a first photovoltaic layer and a second photovoltaic layer arranged in a stack. The first photovoltaic layer has a first thickness and receives light at its top surface. A second photovoltaic layer has a second thickness and is disposed beneath the first photovoltaic layer and receives light passing through the first photovoltaic layer. The first thickness and the second thickness are selected so that a first light absorption at the first photovoltaic layer is equal to a second light absorption at the second photovoltaic layer. The photovoltaic cell is irradiated at its top surface with monochromatic light to generate a current.

Abstract: A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gallium arsenide substrate,a thiourea-based passivation layer in contact with at least a top surface of the gallium arsenide substrate, and a capping layer in contact with the thiourea-based passivation layer. The method includes passivating a gallium arsenide substrate utilizing thiourea to form a passivation layer in contact with at least a top surface of the gallium arsenide substrate. The method further includes forming a capping layer in contact with at least a top surface of the passivation layer, and annealing the capping layer and the passivation layer.

Abstract: Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.

Abstract: Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.

Abstract: Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.