Abstract: Embodiments of the present disclosure provide a method and a device for detecting a threshold voltage drift of a transistor in a pixel circuit, which are used for detecting the threshold voltage drift of the transistor to be detected in the pixel circuit. The transistor to be detected is at least one of the driving transistor and the detection transistor. The detection method comprises: inputting, during an inputting stage, a first turning-on voltage to the second scanning terminal, so as to turn on the detection transistor, enabling writing a first voltage into the second node through the detection signal terminal; inputting, during a detection stage, a first turning-off voltage to the second scanning terminal, so as to turn off the detection transistor, thereby detecting an actual voltage at the second node; and determining a state of the threshold voltage drift of the transistor to be detected according to the actual voltage and the first voltage.

Abstract: The present disclosure provides a composite electrode, an acoustic sensor using the composite electrode, and a manufacturing method of the composite electrode. The composite electrode includes a conductive layer, and a semiconductor high-molecular polymer layer formed on the conductive layer. The semiconductor high-molecular polymer layer has a three-dimensional mesh structure. The acoustic sensor includes a base; the above-mentioned composite electrode formed on the base; an organic layer formed on the composite electrode; and a top electrode formed on the organic layer.

Abstract: An inspection device includes: a driving circuit, configured to input display data of an image to a pixel electrode of the array substrate; a light-emitting device comprising a first electrode, a second electrode, and a plurality of light-emitting units arranged between the first electrode and the second electrode, and the plurality of light-emitting units is capable of emitting light under the effect of an electric field between the first electrode and the second electrode; a test circuit, configured to electrically connect the first electrode of the light-emitting device to the pixel electrode of the array substrate, and input a first electrical signal to the second electrode of the light-emitting device, to generate the electric field; and a processing circuit, configured to acquire optical information of the light emitted by the light-emitting device, and determine whether there is an electrical defect in the array substrate according to the optical information.

Abstract: A voice communication method, a voice communication apparatus, and a voice communication system are disclosed. The method includes: at a transmitting side, obtaining voice information; determining whether the voice information is uttered by a preset user, and transmitting the voice information to a peer device if it is determined that the voice information is uttered by the preset user, and prohibiting the transmission of the voice information otherwise; and at a receiving side, receiving voice information transmitted from a peer device; collecting a first environmental information, and determining whether the first environmental information meets a voice output condition; outputting the voice information if it is determined that the first environmental information meets the voice output condition, and prohibiting the output of the voice information otherwise.

Abstract: A thin film transistor, a display substrate and a method for repairing the same, and a display device are provided. The thin film transistor includes: an active region, a gate insulating layer disposed on a side of the active region, and a gate disposed on a side of the gate insulating layer distal to the active region, and the active region includes a first electrode contact region at one end of the active region, a second electrode contact region at the other end of the active region, and a plurality of connection regions between the first electrode contact region and the second electrode contact region, and each of the plurality of connection regions is coupled to the first electrode contact region and the second electrode contact region, and every two adjacent connection regions are provided with an opening therebetween and are spaced apart from each other by the opening.

Abstract: A pixel structure includes at least three sub-pixels and there is a gap between two adjacent sub-pixels. The gap includes at least a first gap and a second gap, where the first gap extends along a linear trajectory and the second gap extends along a curved trajectory. The wire includes at least a first wire and a second wire, wherein the first wire passes through the first gap along the linear trajectory and is spaced apart from the sub-pixels on both sides of the first gap, and the second wire passes through the second gap along the curved trajectory and is spaced apart from the sub-pixels on both sides of the second gap. The second wire has a line width larger than a line width of the first wire.

Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.

Abstract: Disclosed by the present disclosure are an organic thin film transistor structure and a manufacturing method, a gas sensor, and a related apparatus: a gap, which contacts an organic active layer and which is used for accommodating a gas to be detected, is provided in the organic thin film transistor structure.

Abstract: A pressure sensor, a method for manufacturing the pressure sensor, and an electronic device are provided. The pressure sensor includes an electroluminescent device and a resistor layer. The resistor layer and one electrode of the electroluminescent device are connected to two electrodes of a power source respectively to form a loop. The pressure sensor is capable of converting a deformation amount caused by a pressure into a brightness change of the electroluminescent device, and determining a size of the pressure in accordance with the brightness change.

Abstract: Disclosed are an array substrate, a method for fabricating the same, a display panel, and a display device, and the array substrate includes: an underlying substrate, and gate lines and data lines located on the underlying substrate, and intersecting with each other, a layer where the gate lines are located is between a layer where the data lines are located, and the underlying substrate; and the array substrate further includes a buffer layer located between the underlying substrate and the layer where the gate lines are located; and the buffer layer includes a plurality of through-holes, where orthographical projections of the through-holes onto the underlying substrate cover orthographical projections of the areas where the gate lines intersect with the data lines, onto the underlying substrate.

Abstract: A display back plate, a fabricating method for the same, and a display device are provided. The display back plate includes a substrate, a transparent heat conduction layer disposed on the substrate, and an array structure layer disposed on the heat conduction layer. The array structure layer includes a light shielding layer, a first thin film transistor, and a second thin film transistor, where the light shielding layer is disposed between the transparent heat conduction layer and the first thin film transistor.

Abstract: The disclosure relates to a thin film transistor. The thin film transistor may include a substrate, an active layer on the substrate, a gate on the active layer, and a source and a drain. The active layer may include a first conducting region, a second conducting region, and a channel region between the first conducting region and the second conducting region. An orthographic projection of the source and an orthographic projection of the drain on the substrate may cover at least an orthographic projection of a first conducting region and an orthographic projection of a second conducting region on the substrate.

Abstract: Embodiments of the present disclosure provide an array substrate comprising a base substrate, a buffer layer disposed on the base substrate, an interlayer dielectric layer disposed on the buffer layer, and a protection layer disposed on the interlayer dielectric layer, where the array substrate further comprises a plurality of first test units and a plurality of test leads. The plurality of test leads are connected to the plurality of first test units in a one-to-one correspondence, and the plurality of test leads are disposed in at least two different layers. A method for manufacturing an array substrate, a display panel, and a display device are further provided.

Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and

Abstract: A sputtering system and a deposition method are provided. The sputtering system includes at least two sputtering chambers. Each of the at least two sputtering chambers includes a plurality of targets separated from each other and a plurality of target pedestals. Each of the plurality of targets is mounted on a corresponding target pedestal of the plurality of target pedestals, and a gap between two adjacent targets of the plurality of targets has a width sufficient to accommodate at least one of the plurality of targets.

Abstract: A display substrate, a method for manufacturing the display substrate, and a display device are provided. The display substrate includes a display area and a fanout area at the periphery of the display area. The fanout area includes a data line layer, a first power line layer, and at least two insulation layers between the data line layer and the first power line layer. In a direction perpendicular to a base substrate of the display substrate, the first power line layer overlaps the data line layer. At least one of the at least two insulation layers includes a portion which insulates the first power line layer and the data line layer from each other.

Abstract: A pixel structure includes at least three sub-pixels and there is a gap between two adjacent sub-pixels. The gap includes at least a first gap and a second gap, where the first gap extends along a linear trajectory and the second gap extends along a curved trajectory. The wire includes at least a first wire and a second wire, wherein the first wire passes through the first gap along the linear trajectory and is spaced apart from the sub-pixels on both sides of the first gap, and the second wire passes through the second gap along the curved trajectory and is spaced apart from the sub-pixels on both sides of the second gap. The second wire has a line width larger than a line width of the first wire.

Abstract: The present disclosure provides a gas screening film including at least one gas screening element, each of the at least one gas screening element includes a transistor including a gate, an insulation spacing layer, a first electrode, a semiconductor nanosheet separation layer and a second electrode, and the insulation spacing layer is disposed between the gate and the semiconductor nanosheet separation layer. The present disclosure further provides a manufacturing method of the gas screening film and a face mask. The gas screening film can screen and separate various different gases as necessary.

Abstract: Embodiments of the present disclosure provide an organic light emitting transistor comprising: a substrate, and a gate electrode, a gate insulating layer, source/drain electrodes and a light emitting functional layer disposed on the substrate, wherein the organic light emitting transistor further comprises an external electrode coupled to the gate electrode in series, wherein a temperature-dependent resistance change rate of the gate electrode is different from a temperature-dependent resistance change rate of the external electrode.

Abstract: A sterilization structure, a sterilization board, and a display device are disclosed. The sterilization structure includes an active layer, wherein, one surface of the active layer has an exposed region, and a material of the active layer includes a laser-induced graphene material.