Patents by Inventor Qingping Chen

Qingping Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10879010
    Abstract: Provided is an improved capacitor formed by a process comprising: providing an anode comprising a dielectric thereon wherein the anode comprises a sintered powder wherein the powder has a powder charge of at least 45,000 ?FV/g; and forming a first conductive polymer layer encasing at least a portion of the dielectric by applying a first slurry wherein the first slurry comprises a polyanion and a conductive polymer and wherein the polyanion and conductive polymer are in a weight ratio of greater than 3 wherein the conductive polymer and polyanion forms conductive particles with an average particle size of no more than 20 nm.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: December 29, 2020
    Assignee: KEMET Electronics Corporation
    Inventors: Yaru Shi, Antony P. Chacko, Ajaykumar Bunha, Qingping Chen, Elisabeth Crittendon Key
  • Publication number: 20200373089
    Abstract: The invention is related to an improved capacitor and an improved process for forming a capacitor. The process comprises forming an anode comprising a dielectric on the anode. A cathode layer is then formed on the dielectric wherein the cathode layer comprises a self-doped conductive polymer and a cross-linker wherein a weight ratio of crosslinker to self-doped conductive polymer is at least 0.01 to no more than 2.
    Type: Application
    Filed: August 13, 2020
    Publication date: November 26, 2020
    Inventors: Yaru Shi, Antony P. Chacko, Chenyi Gu, Ajaykumar Bunha, Qingping Chen
  • Publication number: 20200357577
    Abstract: An improved capacitor is provided wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.
    Type: Application
    Filed: July 28, 2020
    Publication date: November 12, 2020
    Inventors: Ajaykumar Bunha, Antony P. Chacko, Yaru Shi, Qingping Chen, Philip M. Lessner
  • Patent number: 10658121
    Abstract: A capacitor and process for forming the capacitor, is provided wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: May 19, 2020
    Assignee: KEMET Electronics Corporation
    Inventors: Ajaykumar Bunha, Antony P. Chacko, Qingping Chen, Yaru Shi, Philip M. Lessner
  • Publication number: 20200152393
    Abstract: Provided is an improved capacitor formed by a process comprising: providing an anode comprising a dielectric thereon wherein the anode comprises a sintered powder wherein the powder has a powder charge of at least 45,000 ?FV/g; and forming a first conductive polymer layer encasing at least a portion of the dielectric by applying a first slurry wherein the first slurry comprises a polyanion and a conductive polymer and wherein the polyanion and conductive polymer are in a weight ratio of greater than 3 wherein the conductive polymer and polyanion forms conductive particles with an average particle size of no more than 20 nm.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Inventors: Yaru Shi, Antony P. Chacko, Ajaykumar Bunha, Qingping Chen, Elisabeth Crittendon Key
  • Patent number: 10650980
    Abstract: A capacitor and process for forming the capacitor, is provided wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: May 12, 2020
    Assignee: KEMET Electronics Corporation
    Inventors: Ajaykumar Bunha, Antony P. Chacko, Qingping Chen, Yaru Shi, Philip M. Lessner
  • Patent number: 10643796
    Abstract: An improved process for forming an electrolytic capacitor is provided. The process comprises: providing an anode with an anode wire extending from the anode body; forming a dielectric on the anode to form an anodized anode; applying a first slurry wherein the first slurry comprises conducting polymer and polyanion, wherein the polyanion and conducting polymer are in a first weight ratio thereby forming a first slurry layer; and applying a second slurry on the first slurry layer wherein the second slurry comprises the conducting polymer and said polyanion and wherein the polyanion and the conducting polymer are in a second weight ratio wherein the second weight ratio is lower than the first weight ratio.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: May 5, 2020
    Assignee: KEMET Electronics Corporation
    Inventors: Antony P. Chacko, Philip M. Lessner, John Joseph Ols, Yaru Shi, Qingping Chen
  • Patent number: 10570520
    Abstract: An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100° C. to no more than the lower of 250° C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: February 25, 2020
    Assignee: KEMET Electronics Corporation
    Inventors: Yang Jin, Qingping Chen
  • Publication number: 20190311857
    Abstract: An improved capacitor is provided wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.
    Type: Application
    Filed: June 10, 2019
    Publication date: October 10, 2019
    Inventors: Ajaykumar Bunha, Antony P. Chacko, Yaru Shi, Qingping Chen, Philip M. Lessner
  • Publication number: 20190267194
    Abstract: A capacitor and a method of making a capacitor, is provided with improved reliability performance. The capacitor comprises an anode; a dielectric on the anode; and a cathode on the dielectric wherein the cathode comprises a conductive polymer and a polyanion wherein the polyanion is a copolymer comprising groups A, B and C represented by Formula AxByCz as described herein.
    Type: Application
    Filed: May 14, 2019
    Publication date: August 29, 2019
    Inventors: Ajaykumar Bunha, Antony P. Chacko, Yaru Shi, Qingping Chen, Philip M. Lessner
  • Patent number: 10340091
    Abstract: A capacitor and a method of making a capacitor, is provided with improved reliability performance. The capacitor comprises an anode; a dielectric on the anode; and a cathode on the dielectric wherein the cathode comprises a conductive polymer and a polyanion wherein the polyanion is a copolymer comprising groups A, B and C represented by Formula AxByCz as described herein.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: July 2, 2019
    Assignee: KEMET Electronics Corporation
    Inventors: Ajaykumar Bunha, Antony P. Chacko, Yaru Shi, Qingping Chen, Philip M. Lessner
  • Publication number: 20190115159
    Abstract: An improved capacitor is provided wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.
    Type: Application
    Filed: October 19, 2018
    Publication date: April 18, 2019
    Inventors: Ajaykumar Bunha, Antony P. Chacko, Qingping Chen, Yaru Shi, Philip M. Lessner
  • Patent number: 10199175
    Abstract: A method for manufacturing a solid electrolytic capacitor and an improved capacitor formed thereby is described. The method includes forming a dielectric on an anode at a formation voltage; forming a conductive polymer layer on the dielectric; and reforming the dielectric in a reformation electrolyte at a reformation voltage wherein the reformation electrolyte comprises a thermal degradation inhibitor.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: February 5, 2019
    Assignee: KEMET Electronics Corporation
    Inventors: Liancai Ning, Qingping Chen, Philip M. Lessner
  • Publication number: 20180330888
    Abstract: Provided is an improved capacitor formed by a process comprising: providing an anode comprising a dielectric thereon wherein the anode comprises a sintered powder wherein the powder has a powder charge of at least 45,000 ?FV/g; and forming a first conductive polymer layer encasing at least a portion of the dielectric by applying a first slurry wherein the first slurry comprises a polyanion and a conductive polymer and wherein the polyanion and conductive polymer are in a weight ratio of greater than 3 wherein the conductive polymer and polyanion forms conductive particles with an average particle size of no more than 20 nm.
    Type: Application
    Filed: July 26, 2018
    Publication date: November 15, 2018
    Inventors: Yaru Shi, Antony P. Chacko, Ajaykumar Bunha, Qingping Chen
  • Patent number: 10109428
    Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying a monoamine, a weak acid and a conductive polymer.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: October 23, 2018
    Assignee: KEMET Electronics Corporation
    Inventors: Yaru Shi, Antony P. Chacko, Hong Zhang, Qingping Chen, Lei Xu, Yang Jin, Zhen Wu
  • Patent number: 10074490
    Abstract: An improved hybrid capacitor is described. The hybrid capacitor comprises an anode with a dielectric thereon and a cathode. An electrolyte is in electrical contact with the cathode and between the cathode and the dielectric. The electrolyte comprises a solid electrolyte coated on the cathode and an impregnating electrolyte wherein the solid electrolyte and the impregnating electrolyte have an intermolecular bond there between.
    Type: Grant
    Filed: February 2, 2016
    Date of Patent: September 11, 2018
    Assignee: KEMET Electronics Corporation
    Inventors: Antony P. Chacko, Liancai Ning, Yaru Shi, Qingping Chen
  • Publication number: 20180211788
    Abstract: An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100° C. to no more than the lower of 250° C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.
    Type: Application
    Filed: February 15, 2018
    Publication date: July 26, 2018
    Inventors: Yang Jin, Qingping Chen
  • Patent number: 9928964
    Abstract: An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100° C. to no more than the lower of 250° C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: March 27, 2018
    Assignee: KEMET Electronics Corporation
    Inventors: Yang Jin, Qingping Chen
  • Publication number: 20170338047
    Abstract: A capacitor and a method of making a capacitor, is provided with improved reliability performance. The capacitor comprises an anode; a dielectric on the anode; and a cathode on the dielectric wherein the cathode comprises a conductive polymer and a polyanion wherein the polyanion is a copolymer comprising groups A, B and C represented by Formula AxByCz as described herein.
    Type: Application
    Filed: May 15, 2017
    Publication date: November 23, 2017
    Inventors: Ajaykumar Bunha, Antony P. Chacko, Yaru Shi, Qingping Chen, Philip M. Lessner
  • Patent number: RE47373
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: April 30, 2019
    Assignee: KEMET Electronics Corporation
    Inventors: Qingping Chen, Yuri Freeman, Steven C. Hussey