Patents by Inventor Qingping Chen

Qingping Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170338048
    Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying a monoamine, a weak acid and a conductive polymer.
    Type: Application
    Filed: August 8, 2017
    Publication date: November 23, 2017
    Inventors: Yaru Shi, Antony P. Chacko, Hong Zhang, Qingping Chen, Lei Xu, Yang Jin, Zhen Wu
  • Patent number: 9761378
    Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying a monoamine, a weak acid and a conductive polymer.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: September 12, 2017
    Assignee: KEMET Electronics Corporation
    Inventors: Yaru Shi, Antony P. Chacko, Hong Zhang, Qingping Chen, Lei Xu, Yang Jin, Zhen Wu
  • Patent number: 9761347
    Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying an amine, a weak acid and a conductive polymer.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: September 12, 2017
    Assignee: KEMET Electronics Corporation
    Inventors: Yaru Shi, Antony P. Chacko, Hong Zhang, Qingping Chen, Randolph S. Hahn, Lei Xu, Yang Jin, Zhen Wu
  • Publication number: 20170098512
    Abstract: An improved process for forming an electrolytic capacitor is provided. The process comprises: providing an anode with an anode wire extending from the anode body; forming a dielectric on the anode to form an anodized anode; applying a first slurry wherein the first slurry comprises conducting polymer and polyanion, wherein the polyanion and conducting polymer are in a first weight ratio thereby forming a first slurry layer; and applying a second slurry on the first slurry layer wherein the second slurry comprises the conducting polymer and said polyanion and wherein the polyanion and the conducting polymer are in a second weight ratio wherein the second weight ratio is lower than the first weight ratio.
    Type: Application
    Filed: December 15, 2016
    Publication date: April 6, 2017
    Inventors: Antony P. Chacko, Phillip M. Lessner, John Joseph Ols, Yaru Shi, Qingping Chen
  • Patent number: 9524829
    Abstract: An improved process for forming a capacitor, and improved capacitor formed thereby is described. The process includes: providing an anode comprising a dielectric thereon; applying a first layer of an intrinsically conducting polymer on the dielectric to form a capacitor precursor; applying at least one subsequent layer of an intrinsically conducting polymer on the first layer from a dispersion; and treating the capacitor precursor at a temperature of at least 50° C. no more than 200° C. at a relative humidity of at least 25% up to 100%, or fusing the layered structure by swelling the layered structure with a liquid and at least partially removing the liquid.
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: December 20, 2016
    Assignee: KEMET Electronics Corporation
    Inventors: Hong Zhang, Qingping Chen, Randolph S. Hahn
  • Publication number: 20160300665
    Abstract: A method for manufacturing a solid electrolytic capacitor and an improved capacitor formed thereby is described. The method includes forming a dielectric on an anode at a formation voltage; forming a conductive polymer layer on the dielectric; and reforming the dielectric in a reformation electrolyte at a reformation voltage wherein the reformation electrolyte comprises a thermal degradation inhibitor.
    Type: Application
    Filed: April 5, 2016
    Publication date: October 13, 2016
    Inventors: Liancai Ning, Qingping Chen, Philip M. Lessner
  • Publication number: 20160293339
    Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying a monoamine, a weak acid and a conductive polymer.
    Type: Application
    Filed: March 30, 2015
    Publication date: October 6, 2016
    Inventors: Yaru Shi, Antony P. Chacko, Hong Zhang, Qingping Chen, Lei Xu, Yang Jin, Zhen Wu
  • Publication number: 20160240323
    Abstract: An improved hybrid capacitor is described. The hybrid capacitor comprises an anode with a dielectric thereon and a cathode. An electrolyte is in electrical contact with the cathode and between the cathode and the dielectric. The electrolyte comprises a solid electrolyte coated on the cathode and an impregnating electrolyte wherein the solid electrolyte and the impregnating electrolyte have an intermolecular bond there between.
    Type: Application
    Filed: February 2, 2016
    Publication date: August 18, 2016
    Inventors: Antony P. Chacko, Liancai Ning, Yaru Shi, Qingping Chen
  • Publication number: 20160211082
    Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying an amine, a weak acid and a conductive polymer.
    Type: Application
    Filed: March 29, 2016
    Publication date: July 21, 2016
    Inventors: Yaru Shi, Antony P. Chacko, Hong Zhang, Qingping Chen, Randolph S. Hahn, Lei Xu, Yang Jin, Zhen Wu
  • Patent number: 9343239
    Abstract: An improved process for forming a capacitor, and improved capacitor formed thereby is described. The process includes: providing an anode comprising a dielectric thereon; applying a first layer of an intrinsically conducting polymer on the dielectric to form a capacitor precursor; applying at least one subsequent layer of an intrinsically conducting polymer on the first layer from a dispersion; and treating the capacitor precursor at a temperature of at least 50° C. no more than 200° C. at a relative humidity of at least 25% up to 100%, or fusing the layered structure by swelling the layered structure with a liquid and at least partially removing the liquid.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: May 17, 2016
    Assignee: Kemet Electronics Corporation
    Inventors: Hong Zhang, Qingping Chen, Randolph S. Hahn
  • Patent number: 9147530
    Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: September 29, 2015
    Assignee: KEMET Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner, Qingping Chen, Javaid Qazi
  • Patent number: 9030807
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of coverage enhancing catalyst followed by application of a conducting polymer layer wherein the conductive polymeric cathode comprises the coverage enhancement catalyst wherein the conductive polymeric layer has improved coverage of the corners and edges. Coverage enhancing catalyst is removed after coating and curing.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: May 12, 2015
    Assignee: Kemet Electronics Corporation
    Inventors: Antony P. Chacko, Qingping Chen, Yang Jin, Philip M. Lessner, Randolph S. Hahn, Yongjian Qiu, Keith R. Brenneman
  • Publication number: 20150124374
    Abstract: An improved process for forming a capacitor, and improved capacitor formed thereby is described. The process includes: providing an anode comprising a dielectric thereon; applying a first layer of an intrinsically conducting polymer on the dielectric to form a capacitor precursor; applying at least one subsequent layer of an intrinsically conducting polymer on the first layer from a dispersion; and treating the capacitor precursor at a temperature of at least 50° C. no more than 200° C. at a relative humidity of at least 25% up to 100%, or fusing the layered structure by swelling the layered structure with a liquid and at least partially removing the liquid.
    Type: Application
    Filed: January 13, 2015
    Publication date: May 7, 2015
    Inventors: Hong Zhang, Qingping Chen, Randolph S. Hahn
  • Publication number: 20140340819
    Abstract: An improved process for forming a capacitor, and improved capacitor formed thereby is described. The process includes: providing an anode comprising a dielectric thereon; applying a first layer of an intrinsically conducting polymer on the dielectric to form a capacitor precursor; applying at least one subsequent layer of an intrinsically conducting polymer on the first layer from a dispersion; and treating the capacitor precursor at a temperature of at least 50° C. no more than 200° C. at a relative humidity of at least 25% up to 100%, or fusing the layered structure by swelling the layered structure with a liquid and at least partially removing the liquid.
    Type: Application
    Filed: May 17, 2013
    Publication date: November 20, 2014
    Applicant: Kemet Electronics Corporation
    Inventors: Hong Zhang, Qingping Chen, Randolph R. Hahn
  • Publication number: 20140301022
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of a non-ionic polyol prior to application of a conducting polymer layer.
    Type: Application
    Filed: May 29, 2014
    Publication date: October 9, 2014
    Inventors: Qingping Chen, Hong Zhang, Antony P. Chacko, Philip M. Lessner, Randolph S. Hahn, Yongjian Qiu, Keith R. Brenneman
  • Patent number: 8808403
    Abstract: A process for forming a solid electrolytic capacitor and an electrolytic capacitor formed by the process. The process includes: providing an anode wherein the anode comprises a porous body and an anode wire extending from the porous body; apply a thin polymer layer onto the dielectric, and forming a dielectric on the porous body to form an anodized anode; applying a first slurry to the anodized anode to form a blocking layer wherein the first slurry comprises a first conducting polymer with an median particle size of at least 0.05 ?m forming a layer of crosslinker on the blocking layer; and applying a layer of a second conducting polymer on the layer of crosslinker.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: August 19, 2014
    Assignee: Kemet Electronics Corporation
    Inventors: Yongjian Qiu, Randolph S. Hahn, Kristen Key, Qingping Chen
  • Patent number: 8771381
    Abstract: A process for preparing a solid electrolytic capacitor comprising application of a non-ionic polyol prior to application of a conducting polymer layer.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: July 8, 2014
    Assignee: Kemet Electronics Corporation
    Inventors: Qingping Chen, Hong Zhang, Antony P. Chacko, Philip M. Lessner, Randolph S. Hahn, Yongjian Qiu, Keith R. Brenneman
  • Publication number: 20140061284
    Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.
    Type: Application
    Filed: September 4, 2013
    Publication date: March 6, 2014
    Applicant: Kemet Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner, Qingping Chen, Javaid Qazi
  • Patent number: 8379371
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: February 19, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Qingping Chen, Yuri Freeman, Steven C. Hussey
  • Publication number: 20120293917
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Application
    Filed: May 20, 2011
    Publication date: November 22, 2012
    Applicant: Kemet Electronics Corporation
    Inventors: Qingping Chen, Yurl Freeman, Steven C. Hussey