Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: Pre-formed wavelength conversion elements are attached to light emitting elements and are shaped to reduce repeated occurrences of total internal reflection. The sides of the shaped elements may be sloped or otherwise shaped so as to introduce a change in the angle of incidence of reflected light upon the light extraction surface of the wavelength conversion element. The pre-formed wavelength conversion elements may be configured to extend over an array of light emitting elements, with features between the light emitting elements that are shaped to reduce repeated occurrences of total internal reflection.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: Pre-formed wavelength conversion elements are attached to light emitting elements and are shaped to reduce repeated occurrences of total internal reflection. The sides of the shaped elements may be sloped or otherwise shaped so as to introduce a change in the angle of incidence of reflected light upon the light extraction surface of the wavelength conversion element. The pre-formed wavelength conversion elements may be configured to extend over an array of light emitting elements, with features between the light emitting elements that are shaped to reduce repeated occurrences of total internal reflection.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: Pre-formed wavelength conversion elements are attached to light emitting elements and are shaped to reduce repeated occurrences of total internal reflection. The sides of the shaped elements may be sloped or otherwise shaped so as to introduce a change in the angle of incidence of reflected light upon the light extraction surface of the wavelength conversion element. The pre-formed wavelength conversion elements may be configured to extend over an array of light emitting elements, with features between the light emitting elements that are shaped to reduce repeated occurrences of total internal reflection.

Abstract: A low-cost conductive carrier element provides structural support to a light emitting device (LED) die, as well as electrical and thermal coupling to the LED die. A lead-frame is provided that includes at least one carrier element, the carrier element being partitioned to form distinguishable conductive regions to which the LED die is attached. When the carrier element is separated from the frame, the conductive regions are electrically isolated from each other. A dielectric may be placed between the conductive regions of the carrier element.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: Pre-formed wavelength conversion elements are attached to light emitting elements and are shaped to reduce repeated occurrences of total internal reflection. The sides of the shaped elements may be sloped or otherwise shaped so as to introduce a change in the angle of incidence of reflected light upon the light extraction surface of the wavelength conversion element. The pre-formed wavelength conversion elements may be configured to extend over an array of light emitting elements, with features between the light emitting elements that are shaped to reduce repeated occurrences of total internal reflection.

Abstract: A low-cost conductive carrier element provides structural support to a light emitting device (LED) die, as well as electrical and thermal coupling to the LED die. A lead-frame is provided that includes at least one carrier element, the carrier element being partitioned to form distinguishable conductive regions to which the LED die is attached. When the carrier element is separated from the frame, the conductive regions are electrically isolated from each other. A dielectric may be placed between the conductive regions of the carrier element.

Abstract: A low-cost conductive carrier element provides structural support to a light emitting device (LED) die, as well as electrical and thermal coupling to the LED die. A lead-frame is provided that includes at least one carrier element, the carrier element being partitioned to form distinguishable conductive regions to which the LED die is attached. When the carrier element is separated from the frame, the conductive regions are electrically isolated from each other. A dielectric may be placed between the conductive regions of the carrier element.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: A low-cost conductive carrier element provides structural support to a light emitting device (LED) die, as well as electrical and thermal coupling to the LED die. A lead-frame is provided that includes at least one carrier element, the carrier element being partitioned to form distinguishable conductive regions to which the LED die is attached. When the carrier element is separated from the frame, the conductive regions are electrically isolated from each other. A dielectric may be placed between the conductive regions of the carrier element.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.

Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Abstract: An etching step is performed on an LED/substrate wafer to etch through the LED epitaxial layers entirely around each LED on the substrate wafer to form a gap between each LED on the wafer. The substrate is not etched. When the LEDs/substrates are singulated, edges of each substrate extend beyond edges of the LED die. The LEDs are flip-chips and are mounted on a submount with the LED die between the submount and the substrate. An insulating underfill material is injected under the LED die and also covers the sides of the LED die and “enlarged” substrate. The substrate is then removed by laser lift-off. The raised walls of the underfill that were along the edges of the enlarged substrate are laterally spaced from the edges of the LED die so that a phosphor plate can be easily positioned on top to the LED die with a relaxed positioning tolerance.