Abstract: The present disclosure provides a microfluidic substrate, a microfluidic chip and a micro total analysis system. The microfluidic substrate includes a substrate and an ultrasonic structure on the substrate. The ultrasonic structure is configured to generate ultrasonic waves during a droplet splitting process to vibrate a droplet.

Abstract: The present disclosure relates to a display substrate, a display device and a manufacturing method of the display substrate. The display substrate includes: a stretchable base including a plurality of opening patterns distributed along a surface of the stretchable base, wherein each of the plurality of opening patterns includes a plurality of opening areas, a plurality of bridge areas configured to enclose a first island area are formed between adjacent opening areas among the plurality of opening areas, and each of the plurality of opening patterns is configured to enclose a plurality of second island areas with at least two adjacent opening patterns; a plurality of display units respectively arranged on the first island area and the plurality of second island areas; and a plurality of signal lines respectively connected between the plurality of display units and respectively arranged in the plurality of bridge areas.

Abstract: The present disclosure relates to a semiconductor packaging method. The method includes: providing a first wafer; and performing a wafer stacking operation a plurality of times. The wafer stacking operation includes: forming a first to-be-bonded wafer in the shape of a boss, where the first to-be-bonded wafer includes a base and a protrusion from the base, and orientating the protrusion toward a second to-be-bonded wafer and bonding the protrusion to the second to-be-bonded wafer; forming a first dielectric layer on a surface of the protrusion; and performing second trimming on an edge region of the protrusion and an edge region of the second to-be-bonded wafer, so that the remainder of the second to-be-bonded wafer after the second trimming is in the shape of a boss, and using the remainder of the wafer stack after the second trimming as the first to-be-bonded wafer for next wafer stacking.

Abstract: A method of manufacturing a metal wire, a method of manufacturing a metal wire grid, a wire grid polarizer, and an electronic device are provided. The method of manufacturing a metal wire includes: forming a metal material layer on a base substrate; etching the metal material layer by using a composite gas including an etching gas and a coating reaction gas to form the metal wire and a protective coating layer on a surface of the metal wire.

Abstract: An array substrate and a method for manufacturing the same, a method and assembly for detecting light, and a display device are provided. The array substrate includes: a base substrate having a pixel region; a light detecting unit, a switch unit, and a light emitting unit that are located in the pixel region, where the light emitting unit and the light detecting unit share the switch unit.

Abstract: A PIN device includes: a first doped layer, a second doped layer, and an intrinsic layer between the first doped layer and the second doped layer, where the second doped layer includes a body portion and an electric field isolating portion at least partially enclosing the body portion; and the electric field isolating portion is doped differently from the body portion.

Abstract: The present disclosure is related to an array substrate. The array substrate may include a base substrate; a plurality or light-emitting devices on the base substrate; a photosensitive device between the light-emitting devices and the base substrate; and a refractive layer between the photosensitive device and the light-emitting devices. The refractive layer may be at a distance from the photosensitive device, and the refractive layer may cover at least a gap region between the adjacent light-emitting devices. A refractive index of the refractive layer may be larger than a refractive index of a film layer in the gap region between the refractive layer and the photosensitive device, and an orthographic protection of the photosensitive device on the base substrate may at least partially overlap an orthographic projection of the light-emitting devices on base substrate.

Abstract: A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

Abstract: The present disclosure provides a polarizing device and a method for preparing the same, a display substrate, and a display device. The polarizing device includes: a base substrate, a metal wire grid, and an anti-reflection layer, in which the metal wire grid is arranged on the base substrate, the anti-reflection layer is arranged on the surface of the metal wire grid away from the base substrate, and the anti-reflection layer is a carbon film layer.

Abstract: The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.

Abstract: An array substrate is provided. The array substrate includes a display area having a first array of subpixels; and a partially transparent area having a second array of subpixels. The partially transparent area includes a plurality of light emitting regions spaced apart from each other by a substantially transparent non-light emitting region. The second array of subpixels is limited in the plurality of light emitting regions. The array substrate further includes a plurality of photosensors and a plurality of first thin film transistors in the substantially transparent non-light emitting region. A respective one of the plurality of photosensors includes a first polarity semiconductor layer, a second polarity semiconductor layer, and an intrinsic semiconductor layer connecting the first polarity semiconductor layer and the second polarity semiconductor layer.

Abstract: The present disclosure provides a display backplane and a method for manufacturing the same, a display panel and a display device, and relates to the field of display technology. The display backplane includes a first backplane and a second backplane. The first backplane includes a first substrate, and a first thin film transistor, on the first substrate, configured to drive a light emitting unit. The second backplane, which is attached to a surface of the first substrate facing away from the first thin film transistor, includes a second substrate and at least one second thin film transistor located between the second substrate and the first substrate.

Abstract: An array substrate is provided. The array substrate includes a display area having a first array of subpixels; and a partially transparent area having a second array of subpixels. The partially transparent area includes a plurality of light emitting regions spaced apart from each other by a substantially transparent non-light emitting region. The second array of subpixels is limited in the plurality of light emitting regions. The array substrate further includes a plurality of photosensors and a plurality of first thin film transistors in the substantially transparent non-light emitting region. A respective one of the plurality of photosensors includes a first polarity semiconductor layer, a second polarity semiconductor layer, and an intrinsic semiconductor layer connecting the first polarity semiconductor layer and the second polarity semiconductor layer.

Abstract: A method of manufacturing a metal wire, a method of manufacturing a metal wire grid, a wire grid polarizer, and an electronic device are provided. The method of manufacturing a metal wire includes: forming a metal material layer on a base substrate etching the metal material layer by using a composite gas including an etching gas and a coating reaction gas to form the metal wire and a protective coating layer on a surface of the metal wire.

Abstract: The present disclosure provides a microfluidic substrate, a microfluidic chip and a micro total analysis system. The microfluidic substrate includes a substrate and an ultrasonic structure on the substrate. The ultrasonic structure is configured to generate ultrasonic waves during a droplet splitting process to vibrate a droplet.

Abstract: The present disclosure is related to an array substrate. The array substrate may include a base substrate, a plurality or light-emitting de ices on the base substrate; a photosensitive device between the light-emitting devices and the base substrate; and a refractive layer between the photosensitive device and the light-emitting devices. The refractive layer may be at a distance from the photosensitive device, and the refractive layer may cover at least a gap region between the adjacent light-emitting devices. A refractive index of the refractive layer may be larger than a refractive index of a film layer in the gap region between the refractive layer and the photosensitive device, and an orthographic protection of the photosensitive device on the base substrate may at least partially overlap an orthographic projection of the light-emitting devices on base substrate.

Abstract: The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.

Abstract: A PIN device includes: a first doped layer, a second doped layer, and an intrinsic layer between the first doped layer and the second doped layer, where the second doped layer includes a body portion and an electric field isolating portion at least partially enclosing the body portion; and the electric field isolating portion is doped differently from the body portion.

Abstract: A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

Abstract: The present disclosure relates to a display substrate, a display device and a manufacturing method of the display substrate. The display substrate includes: a stretchable base including a plurality of opening patterns distributed along a surface of the stretchable base, wherein each of the plurality of opening patterns includes a plurality of opening areas, a plurality of bridge areas configured to enclose a first island area are formed between adjacent opening areas among the plurality of opening areas, and each of the plurality of opening patterns is configured to enclose a plurality of second island areas with at least two adjacent opening patterns; a plurality of display units respectively arranged on the first island area and the plurality of second island areas; and a plurality of signal lines respectively connected between the plurality of display units and respectively arranged in the plurality of bridge areas.