Abstract: An embodiment of this disclosure discloses a metal wire grid comprising: a patterned metal layer and a patterned antireflective layer located on the patterned metal layer, wherein a surface of the antireflective layer distal to the patterned metal layer has a plurality of continuous pits. Embodiments of this disclosure further disclose a method of manufacturing a metal wire grid and a display panel.

Abstract: An array substrate and a method for manufacturing the same, a method and assembly for detecting light, and a display device are provided. The array substrate includes: a base substrate having a pixel region; a light detecting unit, a switch unit, and a light emitting unit that are located in the pixel region, where the light emitting unit and the light detecting unit share the switch unit.

Abstract: The present disclosure provides a backlight source. The backlight source includes: a substrate, and a first conductive structure, a plurality of light emitting units, and a second conductive structure which are stacked on the substrate. The first conductive structure and the second conductive structure are respectively on two sides of the plurality of light emitting units in a direction perpendicular to the substrate, and the first conductive structure and the second conductive structure are configured to load a voltage for the plurality of light emitting units.

Abstract: The embodiments of the present disclosure provide an array substrate, a preparation method thereof, and a display device. The preparation method of an array substrate comprises: forming the active layer, a gate insulating layer, the gate metal layer and the patterned photoresist sequentially on a substrate; forming a gate electrode transition pattern by etching a gate metal layer via a patterned photoresist, using a wet etching process and a dry etching process sequentially; and doping an area of the active layer not sheltered by the gate electrode transition pattern with ions to form a heavily doped area of the active layer.

Abstract: The present disclosure provides a display backplane and a method for manufacturing the same, a display panel and a display device, and relates to the field of display technology. The display backplane includes a first backplane and a second backplane. The first backplane includes a first substrate, and a first thin film transistor, on the first substrate, configured to drive a light emitting unit. The second backplane, which is attached to a surface of the first substrate facing away from the first thin film transistor, includes a second substrate and at least one second thin film transistor located between the second substrate and the first substrate.

Abstract: An array substrate, a method for manufacturing the same, a display panel, and a display device are provided. The array substrate comprises a substrate, a light shielding layer on the substrate, and a transistor arranged at a side of the light shielding layer away from the substrate, the transistor including an active layer.

Abstract: A pixel structure, a liquid crystal display panel, a method of operating the liquid crystal display panel, and a display device are disclosed. The pixel structure includes a light shutter for switching between first and second states, wherein in the first and second states, the light shutter only allows first polarized light having a first polarization direction and second polarized light having a second polarization direction to pass, respectively; a birefringent filter for causing emergent paths of the first and second polarized light to be first and second paths, respectively; a first liquid crystal unit and a first color filter in the first path and corresponding to a first sub-pixel region, wherein the first color filter is at a light-emergent side of the first liquid crystal unit; and a second liquid crystal unit in the second path and corresponding to a second sub-pixel region.

Abstract: A fingerprint identification sensor, a method of fabricating the same, and a fingerprint identification apparatus are provided. The fingerprint identification sensor includes: a substrate; a plurality of sensor units on the substrate, each of the sensor units comprising a thin film transistor and a photosensitive device; wherein the thin film transistor comprises a source and a drain, an active layer and a gate, the source and the drain being arranged substantially in a direction perpendicular to the substrate surface.

Abstract: The present disclosure provides a polarizing device and a method for preparing the same, a display substrate, and a display device. The polarizing device includes: a base substrate, a metal wire grid, and an anti-reflection layer, in which the metal wire grid is arranged on the base substrate, the anti-reflection layer is arranged on the surface of the metal wire grid away from the base substrate, and the anti-reflection layer is a carbon film layer.

Abstract: An embodiment of this disclosure discloses a metal wire grid comprising: a patterned metal layer and a patterned antireflective layer located on the patterned metal layer, wherein a surface of the antireflective layer distal to the patterned metal layer has a plurality of continuous pits. Embodiments of this disclosure further disclose a method of manufacturing a metal wire grid and a display panel.

Abstract: A pixel structure, a liquid crystal display panel, a method of operating the liquid crystal display panel, and a display device are disclosed. The pixel structure includes a light shutter for switching between first and second states, wherein in the first and second states, the light shutter only allows first polarized light having a first polarization direction and second polarized light having a second polarization direction to pass, respectively; a birefringent filter for causing emergent paths of the first and second polarized light to be first and second paths, respectively; a first liquid crystal unit and a first color filter in the first path and corresponding to a first sub-pixel region, wherein the first color filter is at a light-emergent side of the first liquid crystal unit; and a second liquid crystal unit in the second path and corresponding to a second sub-pixel region.

Abstract: A fingerprint identification sensor, a method of fabricating the same, and a fingerprint identification apparatus are provided. The fingerprint identification sensor includes: a substrate; a plurality of sensor units on the substrate, each of the sensor units comprising a thin film transistor and a photosensitive device; wherein the thin film transistor comprises a source and a drain, an active layer and a gate, the source and the drain being arranged substantially in a direction perpendicular to the substrate surface.

Abstract: A dry etching method, including: etching a silicon-containing thin film with a first gas by a first preset thickness; etching the silicon-containing thin film with a second gas by a second preset thickness, to remove etching residues generated after etching the silicon-containing thin film by the first preset thickness; after the etching residues are removed, etching the silicon-containing thin film with the first gas by a third preset thickness, which is less than the first preset thickness; wherein the first gas includes chlorine gas, and the second gas includes fluoride gas.

Abstract: A dry etching method, including: etching a silicon-containing thin film with a first gas by a first preset thickness; etching the silicon-containing thin film with a second gas by a second preset thickness, to remove etching residues generated after etching the silicon-containing thin film by the first preset thickness; after the etching residues are removed, etching the silicon-containing thin film with the first gas by a third preset thickness, which is less than the first preset thickness; wherein the first gas includes chlorine gas, and the second gas includes fluoride gas.

Abstract: The embodiments of the present disclosure provide an array substrate, a preparation method thereof, and a display device. The preparation method of an array substrate comprises: forming the active layer, a gate insulating layer, the gate metal layer and the patterned photoresist sequentially on a substrate; forming a gate electrode transition pattern by etching a gate metal layer via a patterned photoresist, using a wet etching process and a dry etching process sequentially; and doping an area of the active layer not sheltered by the gate electrode transition pattern with ions to form a heavily doped area of the active layer.