Abstract: A micro-speaker, the manufacturing method thereof, a speaker device and an electronic apparatus are described herein. The micro-speaker comprises a case, wherein the case has an opening; and a piezoelectric layer, wherein one or more electrodes are provided on the piezoelectric layer, and wherein the piezoelectric layer is pre-buckled in its rest position, wherein the piezoelectric layer covers the opening and is bonded onto the case, to form a speaker rear cavity together with the case. The micro-speaker of the present invention has a relatively low speaker profile.

Abstract: The present invention discloses a band-pass acoustic filter and an acoustic sensing apparatus. The band-pass acoustic filter including at least two MEMS microphone chips and an ASIC chip, wherein the output signals of the MEMS microphone chips are processed in the ASIC chip after being coupled.

Abstract: A MEMS microphone chip trimming method, apparatus, manufacturing method and microphone are disclosed herein. The method for trimming MEMS microphone chips comprises: detecting a pull-in voltage distribution of MEMS microphone chips on a wafer; providing a mask based on the pull-in voltage distribution; and trimming the MEMS microphone chips on the wafer by using the mask.

Abstract: The present invention provides a silicon speaker comprising an MEMS acoustoelectric chip and a PCB substrate, wherein the MEMS acoustoelectric chip comprises a corrugated diaphragm on a silicon substrate; and one side surface of the MEMS acoustoelectric chip is metalized, and the metalized side surface of the MEMS acoustoelectric chip is connected with the PCB substrate. The corrugated diaphragm is electrically conductive and interconnected with metal paths on MEMS acoustoelectric chip, which is led out to a first PCB metal path as one electrode. A second PCB metal path below the MEMS chip forms another electrode of the electrostatic actuator. The silicon speaker provided by the present invention lowers manufacturing costs of the speaker, and allows the diaphragm to generate high and repeatable/reliable sound pressure upon large displacements so as to improve the sounding effects of the speaker.

Abstract: Semiconductor LED layers are epitaxially grown on a patterned surface of a sapphire substrate. The patterned surface improves light extraction. The LED layers include a p-type layer and an n-type layer. The LED layers are etched to expose the n-type layer. One or more first metal layers are patterned to electrically contact the p-type layer and the n-type layer to form a p-metal contact and an n-metal contact. A dielectric polymer stress-buffer layer is spin-coated over the first metal layers to form a substantially planar surface over the first metal layers. The stress-buffer layer has openings exposing the p-metal contact and the n-metal contact. Metal solder pads are formed over the stress-buffer layer and electrically contact the p-metal contact and the n-metal contact through the openings in the stress-buffer layer. The stress-buffer layer acts as a buffer to accommodate differences in CTEs of the solder pads and underlying layers.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming a micro-LED on a laser-transparent original substrate; bringing the micro-LED into contact with a pad preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the micro-LED from the original substrate.

Abstract: A repairing method, manufacturing method, device and electronic apparatus of micro-LED are disclosed. The method for repairing micro-LED defects comprises: obtaining a micro-LED defect pattern on a receiving substrate; forming micro-LEDs (703b) corresponding to the defect pattern on a laser-transparent repair carrier substrate (707); aligning the micro-LEDs (703b) on the repair carrier substrate (707) with defect positions on the receiving substrate, and bringing the micro-LEDs (703b) into contact with pads at the defect positions; and irradiating the repair carrier substrate with a laser from the repair carrier substrate side, to lift-off the micro-LEDs from the repair carrier substrate (707).

Abstract: A piezoelectric speaker and a method for forming the piezoelectric speaker are provided. The method includes: providing a piezoelectric actuator which includes a piezoelectric layer, a bottom electrode and a top electrode, wherein the bottom electrode and the top electrode are on two opposite surfaces of the piezoelectric layer; providing a speaker frame which includes a base and a bump structure on the base; forming a solder layer on a top surface of the bump structure; and combining the bottom electrode of the piezoelectric actuator with the speaker frame through the solder layer.

Abstract: The present invention provides a silicon microphone with a high-aspect-ratio corrugated diaphragm and a microphone package including the same. The microphone comprises the corrugated diaphragm on which at least one ring-shaped corrugation is formed in the vicinity of the edge of the diaphragm which is fixed to the substrate, the corrugated diaphragm is flexible, wherein the ratio of the depth of the corrugation to the thickness of the diaphragm is larger than 5:1, preferably 20:1, and the walls of the corrugation are inclined to the surface of the diaphragm at an angle in the range of 80° to 100°. The microphone with the high-aspect-ratio corrugated diaphragm can achieve a consistent and optimal sensitivity and greatly reduce impact applied thereto in a drop test so that the performances, the reproducibility, the reliability and the yield can be improved. The microphone package of the present invention further provides a simplified processing, an improved sensitivity and an improved SNR.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LEDs comprises: forming a mask layer on the backside of a laser-transparent original substrate, wherein micro-LEDs are formed on the front-side of the original substrate; bringing the micro-LEDs on the original substrate in contact with preset pads on a receiving substrate; and irradiating the original substrate from the original substrate side with laser through the mask layer, to lift-off micro-LEDs from the original substrate.

Abstract: The present invention discloses a repairing method, manufacturing method, device and electronics apparatus of micro-LED. The method for repairing a micro-LED comprises: bringing a known-good micro-LED on a conductive pick-up head into contact with a first pad on an defective position of a receiving substrate, wherein the conductive pick-up head and the known-good micro-LED are bonded via a conductive adhesive; locally joule heating a first bonding layer through the conductive pick-up head, to melt the first bonding layer, wherein the first bonding layer is provided between the known-good micro-LED and the first pad; and lifting up the conductive pick-up head after the first bonding layer is cooled, leaving the known-good micro-LED on the receiving substrate.

Abstract: A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

Abstract: The present invention provides a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate to obtain an insulating layer thereon and providing a metal layer on the insulating layer; providing a sacrificial layer on the metal layer; providing a first thermal bimorph layer on the sacrificial layer; providing a second thermal bimorph layer on the first thermal bimorph layer; providing a metal connecting layer at the positions on the metal layer where the sacrificial layer is not provided; forming corresponding back holes on the substrate and the insulating layer and releasing the sacrificial layer; forming the thermal bimorph diaphragm which is warped with the first thermal bimorph layer and the second thermal bimorph layer after the sacrificial layer is released.

Abstract: Semiconductor LED layers are epitaxially grown on a patterned surface of a sapphire substrate. The patterned surface improves light extraction. The LED layers include a p-type layer and an n-type layer. The LED layers are etched to expose the n-type layer. One or more first metal layers are patterned to electrically contact the p-type layer and the n-type layer to form a p-metal contact and an n-metal contact. A dielectric polymer stress-buffer layer is spin-coated over the first metal layers to form a substantially planar surface over the first metal layers. The stress-buffer layer has openings exposing the p-metal contact and the n-metal contact. Metal solder pads are formed over the stress-buffer layer and electrically contact the p-metal contact and the n-metal contact through the openings in the stress-buffer layer. The stress-buffer layer acts as a buffer to accommodate differences in CTEs of the solder pads and underlying layers.

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205?) on the receiving substrate (204).

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED (402) are disclosed. The method for transferring micro-LED (402) comprises: transferring at least one micro-LED (402) from an original substrate (406) to a support body (412); transferring the at least one micro-LED (402) from the support body (412) to a backup substrate (415); and transferring the at least one micro-LED (402) from the backup substrate (415) to a receiving substrate (417).

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate; irradiating the original substrate with laser from the original substrate side to lift-off the micro-LEDs from the original substrate; bring the micro-LEDs into contact with pads preset on a receiving substrate through a contactless action.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate, wherein the micro-LEDs are lateral micro-LEDs whose P electrodes and N electrodes are located on one side; bringing the P electrodes and N electrodes of the lateral micro-LEDs into contact with pads preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate. A technical effect of using lateral micro-LEDs lies in that the processing for N metal electrode after the micro-LED transfer can be omitted.

Abstract: The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.