Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of

Abstract: This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure.

Abstract: A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode.

Abstract: A vertical high-voltage light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and die bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer (320). A conductive wire (140) is distributed on a surface of the light emitting device, so that a single LED unit (330) has a vertical structure, and multiple LEDs are connected in series to form a high-voltage LED, thereby solving the problems of low light emitting efficiency and large thermal resistance of a horizontal structure.

Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of

Abstract: A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode.

Abstract: An n-type layer, an active layer, and a p-type layer are grown on a growth substrate. Portions of the p-type layer and active layer are etched away to expose the n-type layer, and an n-electrode is formed over the exposed portions of the n-type layer. A first dielectric layer is formed over the n-electrodes. A transparent conductor layer is formed over the p-type layer and the first dielectric layer. A p-electrode is formed over the transparent conductor layer. A transparent bonding layer is deposited over the transparent conductor layer and the p-electrode. A transparent support substrate is bonded to the p-type layer via the bonding layer. The growth substrate is then removed to expose the n-type layer, and the layers are etched to expose the n and p electrodes for connection to a power source. A reflector layer is formed on the bottom surface of the substrate.

Abstract: This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.

Abstract: An n-type layer, an active layer, and a p-type layer are grown on a growth substrate. Portions of the p-type layer and active layer are etched away to expose the n-type layer, and an n-electrode is formed over the exposed portions of the n-type layer. A first dielectric layer is formed over the n-electrodes. A transparent conductor layer is formed over the p-type layer and the first dielectric layer. A p-electrode is formed over the transparent conductor layer. A transparent bonding layer is deposited over the transparent conductor layer and the p-electrode. A transparent support substrate is bonded to the p-type layer via the bonding layer. The growth substrate is then removed to expose the n-type layer, and the layers are etched to expose the n and p electrodes for connection to a power source. A reflector layer is formed on the bottom surface of the substrate.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED toward a peripheral region of the LED.

Abstract: A reflector for a GaN-based light-emitting device, method for manufacturing the reflector and GaN-based light-emitting device including the reflector are provided. The reflector is formed on a p-type GaN-based epitaxial layer and includes: a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer; and a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal. The whisker of un-doped GaN is positioned on the dislocation defect of the p-type GaN-based epitaxial layer, so that the Ag reflective layer can be separated from the dislocation defect of the p-type GaN-based epitaxial layer, thereby effectively preventing Ag from moving inside the dislocation defect via electromigration, and largely decreasing the possibility of current leakage of the light-emitting device including the Ag reflector.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED toward a peripheral region of the LED.

Abstract: The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same.

Abstract: A reflector for a GaN-based light-emitting device, method for manufacturing the reflector and GaN-haled light-emitting device including the reflector are provided. The reflector is formed on a p-type GaN-based epitaxial layer and includes: a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer; and a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal. The whisker of un-doped GaN is positioned on the dislocation defect of the p-type GaN-based epitaxial layer, so that the Ag reflective layer can be separated from the dislocation defect of the p-type GaN-based epitaxial layer, thereby effectively preventing Ag from moving inside the dislocation defect via electromigration, and largely decreasing the possibility of current leakage of the light-emitting device including the Ag reflector.

Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.

Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.

Abstract: The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same.