Patents by Inventor Qunwen Leng

Qunwen Leng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9396742
    Abstract: A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: July 19, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Cheng-Han Yang, Chen-Jung Chen, Christian Kaiser, Yuankai Zheng, Qunwen Leng, Mahendra Pakala
  • Publication number: 20160180870
    Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
    Type: Application
    Filed: November 17, 2015
    Publication date: June 23, 2016
    Applicant: Western Digital (Fremont), LLC
    Inventors: SHAOPING LI, YUANKAI ZHENG, GERARDO A. BERTERO, QUNWEN LENG, MICHAEL L. MALLARY, RONGFU XIAO, MING MAO, ZHIHONG ZHANG, ANUP G. ROY, CHEN JUNG CHIEN, ZHITAO DIAO, LING WANG
  • Publication number: 20160163961
    Abstract: A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a dusting layer (e.g. tantalum). An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).
    Type: Application
    Filed: January 12, 2016
    Publication date: June 9, 2016
    Inventors: Shaoping Li, Gerardo A. Bertero, Yuankai Zheng, Qunwen Leng, Shihai He, Yunfei Ding, Ming Mao, Abhinandan Chougule, Daniel K. Lottis
  • Patent number: 9361913
    Abstract: Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: June 7, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Yuankai Zheng, Qunwen Leng
  • Patent number: 9361914
    Abstract: A magnetic sensor for use in a data storage device is described. The magnetic sensor includes a composite layer comprising a free layer portion and a bias layer portion each comprising a magnetic material, a shield layer comprising a magnetic material, and a continuous spacer layer comprising a non-magnetic material, the spacer layer separating the shield layer from the composite layer such that the magnetic coupling between the shield layer and the bias layer portion is stronger than the magnetic coupling between the shield layer and the free layer portion. A disk drive comprising a rotatable magnetic recording disk and the slider including the magnetic sensor arranged with the magnetic recording disk is also described.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: June 7, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Christian Kaiser, Qunwen Leng
  • Patent number: 9236560
    Abstract: A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of 6 to 30 Angstroms of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a tantalum dusting layer. An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: January 12, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Shaoping Li, Gerardo A. Bertero, Yuankai Zheng, Qunwen Leng, Shihai He, Yunfei Ding, Ming Mao, Abhinandan Chougule, Daniel K. Lottis
  • Publication number: 20150380026
    Abstract: Systems and methods are provided for manufacturing a magnetic recording sensor for use in a magnetic reader, such as a tunneling magnetoresistance (TMR) readers. The magnetic recording sensor can be manufactured by heating a substrate in a first chamber and depositing an antiferromagnetic (AFM) layer on the heated substrate. Additionally, a first pinned layer is added onto the AFM layer, and the substrate is subsequently cooled.
    Type: Application
    Filed: September 3, 2015
    Publication date: December 31, 2015
    Inventors: YUANKAI ZHENG, QUNWEN LENG, TONG ZHAO, CHRISTIAN KAISER, ZHITAO DIAO, XIN JIANG
  • Patent number: 9214168
    Abstract: A method and system for providing a magnetic transducer is described. The method and system include providing a magnetic structural barrier layer and a crystalline magnetic layer on the magnetic structural barrier layer. The magnetic structural barrier layer may reside on a shield. The method and system also include providing a nonmagnetic layer on the crystalline magnetic layer. A pinning layer is provided on the nonmagnetic layer. Similarly, a pinned layer is provided on the pinning layer. The pinning layer is magnetically coupled with the pinned layer. The method and system also include providing a free layer and a nonmagnetic spacer layer between the pinned layer and the free layer.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: December 15, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Chando Park, Qunwen Leng, Sangmun Oh, Mahendra Pakala
  • Patent number: 9214169
    Abstract: A method and system provide a magnetic transducer including a first shield, a read sensor, and a second shield. The read sensor is between the first shield and the second shield. The read sensor includes a pinned layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of ferromagnetic layers interleaved with and sandwiching a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are ferromagnetically aligned.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: December 15, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Christian Kaiser, Yuankai Zheng, Xin Jiang, Zhitao Diao, Qunwen Leng
  • Patent number: 9214172
    Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: December 15, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Shaoping Li, Yuankai Zheng, Gerardo A. Bertero, Qunwen Leng, Michael L. Mallary, Rongfu Xiao, Ming Mao, Zhihong Zhang, Anup G. Roy, Chen Jung Chien, Zhitao Diao, Ling Wang
  • Patent number: 9147408
    Abstract: Systems and methods are provided for manufacturing a magnetic recording sensor for use in a magnetic reader, such as a tunneling magnetoresistance (TMR) readers. The magnetic recording sensor can be manufactured by heating a substrate in a first chamber and depositing an antiferromagnetic (AFM) layer on the heated substrate. Additionally, a first pinned layer is added onto the AFM layer, and the substrate is subsequently cooled.
    Type: Grant
    Filed: March 17, 2014
    Date of Patent: September 29, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Yuankai Zheng, Qunwen Leng, Tong Zhao, Christian Kaiser, Zhitao Diao, Xin Jiang
  • Patent number: 9093639
    Abstract: This invention describes a novel tunnel magnetoresistive (TMR) deposition process that can enhance the signal-to-noise ratio (SNR) of a TMR reader. A method of manufacturing a tunnel magnetoresistive sensor includes providing a substrate; forming a first portion of a magnetic tunnel junction (MTJ) structure on the substrate; forming a second portion of the MTJ structure on the substrate; forming a tunnel barrier layer of the MTJ structure between the first portion and the second portion; heating the first portion of the MTJ structure before forming the tunnel barrier layer or after forming at least a portion of the tunnel barrier layer; and cooling the tunnel barrier layer.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: July 28, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Christian Kaiser, Qunwen Leng, Mahendra Pakala
  • Patent number: 9070381
    Abstract: A method and system provide a magnetic transducer including a first shield, a read sensor, and a second shield. The read sensor is between the first shield and the second shield. The read sensor has a free layer including a plurality of ferromagnetic layers interleaved with and sandwiching at least one additional layer. Each of the ferromagnetic layers includes at least one of Fe, Co and B and has a first corrosion resistance. The additional layer(s) have a second corrosion resistance greater than the first corrosion resistance.
    Type: Grant
    Filed: June 17, 2013
    Date of Patent: June 30, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Cheng-Han Yang, Christian Kaiser, Yuankai Zheng, Qunwen Leng, Chih-Ching Hu
  • Patent number: 9064534
    Abstract: A method is provided for providing a magnetic recording transducer having a pinning layer with high pinning field stability. A bottom structure comprising a substrate, a magnetic shield above the substrate, a magnetic seed layer above the shield, a nonmagnetic spacer layer above the magnetic seed layer, and a layer of antiferromagnetic (AFM) material on the nonmagnetic spacer layer is provided. The bottom structure is heated to a temperature of at least 373 Kelvin (K) and then the bottom structure is cooled until the temperature of the structure is reduced to less than 293K. A pinned layer is deposited on the AFM layer, a nonmagnetic spacer is provided on the pinned layer, and a read sensor fabricated above the nonmagnetic spacer. In one embodiment, cooling the structure comprises reducing the temperature of the structure by at least 100K in less than 25 minutes.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: June 23, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Yuankai Zheng, Qunwen Leng, Cheng-Han Yang
  • Patent number: 9053719
    Abstract: A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: June 9, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Cheng-Han Yang, Chen-Jung Chien, Christian Kaiser, Yuankai Zheng, Qunwen Leng, Mahendra Pakala
  • Patent number: 9042057
    Abstract: Methods for providing magnetic storage elements with high magneto-resistance using Heusler alloys are provided. One such method includes depositing a substrate including NiFe, depositing a seed layer on the substrate, depositing a buffer layer on the seed layer, and growing, epitaxially, an upper layer on the buffer layer, the upper layer including a Heusler alloy.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: May 26, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Zhitao Diao, Qunwen Leng
  • Publication number: 20150109702
    Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
    Type: Application
    Filed: March 31, 2014
    Publication date: April 23, 2015
    Applicant: Western Digital (Fremont), LLC
    Inventors: SHAOPING LI, YUANKAI ZHENG, GERARDO A. BERTERO, QUNWEN LENG, MICHAEL L. MALLARY, RONGFU XIAO, MING MAO, ZHIHONG ZHANG, ANUP G. ROY, CHEN JUNG CHIEN, ZHITAO DIAO, LING WANG
  • Patent number: 9003640
    Abstract: A method for fabricating a magnetic recording transducer is described. The method includes providing a pinned layer for a magnetic element. The portion of the magnetic transducer including the pinned layer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. The portion of the magnetic recording transducer is annealed in the high vacuum annealing apparatus. A tunneling barrier is provided after the step of annealing the part of the magnetic recording transducer. A free layer for the magnetic element is also provided.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: April 14, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Chando Park, Qunwen Leng, Mahendra Pakala
  • Patent number: 9007725
    Abstract: A magnetic sensor includes first and second ferromagnetic free layers that are not magnetically pinned, and a non-magnetic spacer layer disposed between them. The first ferromagnetic free layer comprises a first plurality of ferromagnetic sub-layers that includes a first cobalt iron sub-layer that is in contact with the non-magnetic spacer layer, and a first amorphous cobalt boron sub-layer that is not in contact with the non-magnetic spacer layer. The second ferromagnetic free layer comprises a second plurality of ferromagnetic sub-layers that includes a second cobalt iron sub-layer that is in contact with the non-magnetic spacer layer, and a second amorphous cobalt boron sub-layer that is not in contact with the non-magnetic spacer layer. Each of the first and second cobalt iron sub-layers has a composition Co(100?x)Fe(x) with x being in the range of 10 to 90 atomic percentage.
    Type: Grant
    Filed: October 7, 2014
    Date of Patent: April 14, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Zhitao Diao, Yuankai Zheng, Christian Kaiser, Qunwen Leng
  • Patent number: 8984740
    Abstract: A method for providing a magnetic recording transducer is provided. The method includes providing a substrate, and a magnetic shield having a top surface above the substrate. The top surface is treated by a first plasma treatment performed at a first power. An amorphous ferromagnetic (FM) layer is deposited on and in contact with the top surface to a thickness of at least 5 Angstroms and not more than 50 Angstroms. A second plasma treatment is performed at a second power. A magnetic seed layer is provided on and contact with the amorphous FM layer. The magnetic seed layer may comprise a bilayer. A nonmagnetic spacer layer is provided above the magnetic seed layer, an antiferromagnetic (AFM) layer provided above the spacer layer, and a read sensor provided above the AFM layer.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: March 24, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Yuankai Zheng, Qunwen Leng, Cheng-Han Yang, Zhitao Diao