Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS) and at least two read sensors. The magnetic transducer also includes a first read shield, a first read sensor, a middle shield, a second read sensor, a second read shield, a first electric gap and a second electric gap. The first read sensor is in a down track direction from the first read shield. The middle shield is in a down track direction from the first read sensor. The middle shield is between the first read sensor and the second read sensor. A first portion of the first electric gap is in a direction opposite to the down track direction from the first read sensor. The first read sensor and the second read sensor are between the first electric gap and the second electric gap in a cross-track direction.

Abstract: Systems and methods for providing magnetic storage elements with high magneto-resistance using Heusler alloys are provided. One such method includes depositing a substrate including NiFe, depositing a seed layer on the substrate, depositing a buffer layer on the seed layer, and growing, epitaxially, an upper layer on the buffer layer, the upper layer including a Heusler alloy.

Abstract: A method and system for providing a magnetic transducer is described. The method and system include providing a magnetic shield, an insertion layer on the magnetic shield, an antiferromagnetic (AFM) layer, a pinned layer magnetically coupled with the AFM layer, a nonmagnetic spacer layer, and a free layer. The magnetic shield has a texture and a grain size. The insertion layer has a thickness that is sufficiently large that the AFM layer is magnetically decoupled from the magnetic shield and sufficiently small that the AFM layer is structurally coupled with the magnetic shield. The pinned layer resides between the AFM layer and the nonmagnetic spacer layer. The nonmagnetic spacer layer resides between the free layer and the pinned layer.

Abstract: A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a bilayer magnetic seed layer, an antiferromagnetic (AFM) layer, and a read sensor. The bilayer magnetic seed layer includes a Ni1-xFex layer and a Ni1-yFey layer on the Ni1-xFex layer, where x is at least 0.3 and not more than 1 and where y is not more than 0.19. The AFM layer resides on the bilayer magnetic seed layer. The read sensor is on the AFM layer.

Abstract: A magnetic sensor configured to reside in proximity to a recording medium during use having a high spin polarization reference layer stack above AFM layers. The reference layer stack comprises a first boron-free ferromagnetic layer above the AFM coupling layer; a magnetic coupling layer on and in contact with the first boron-free ferromagnetic layer; a second ferromagnetic layer comprising boron deposited on and contact with the magnetic coupling layer; and a boron-free third ferromagnetic layer on and in contact the second ferromagnetic layer. A barrier layer is deposited on and in contact with the boron-free third ferromagnetic layer. In one aspect of the invention, the magnetic coupling layer may comprise at least one of Ta, Ti, or Hf. A process for providing the magnetic sensor is also provided.

Abstract: The method and system for providing a spin tunneling element are disclosed. The method and system include depositing a pinned layer, a barrier layer, and a free layer. The barrier layer has a first crystal structure and a texture. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The first ferromagnetic is adjacent to the second ferromagnetic layer and between the second ferromagnetic layer and the barrier layer. The first ferromagnetic layer has the first crystal structure and the texture, while the second ferromagnetic layer has a second crystal structure different from the first crystal structure.

Abstract: A method and system for providing a magnetoresistive structure are described. The magnetoresistive structure includes a first electrode, an insertion layer, a crystalline tunneling barrier layer, and a second electrode. The first electrode includes at least a first magnetic material and boron. The crystalline tunneling barrier layer includes at least one constituent. The insertion layer has a first boron affinity. The at least one constituent of the crystalline tunneling barrier layer has at least a second boron affinity that is less than the first boron affinity. The second electrode includes at least a second magnetic material.

Abstract: A method and system for providing a magnetic transducer is described. The method and system include providing a magnetic structural barrier layer and a crystalline magnetic layer on the magnetic structural barrier layer. The magnetic structural barrier layer may reside on a shield. The method and system also include providing a nonmagnetic layer on the crystalline magnetic layer. A pinning layer is provided on the nonmagnetic layer. Similarly, a pinned layer is provided on the pinning layer. The pinning layer is magnetically coupled with the pinned layer. The method and system also include providing a free layer and a nonmagnetic spacer layer between the pinned layer and the free layer.

Abstract: This invention describes a novel tunnel magnetoresistive (TMR) deposition process that can enhance the signal-to-noise ratio (SNR) of a TMR reader. A method of manufacturing a tunnel magnetoresistive sensor includes providing a substrate; forming a first portion of a magnetic tunnel junction (MTJ) structure on the substrate; forming a second portion of the MTJ structure on the substrate; forming a tunnel barrier layer of the MTJ structure between the first portion and the second portion; heating the first portion of the MTJ structure before forming the tunnel barrier layer or after forming at least a portion of the tunnel barrier layer; and cooling the tunnel barrier layer.

Abstract: A magnetoresistive sensor having a novel free layer and a method of producing the same are disclosed. The magnetoresistive sensor comprises a pinned layer, a barrier layer disposed over the pinned layer, and a free layer disposed over the barrier layer. The free layer comprises a first magnetic layer disposed over the barrier layer. The first magnetic layer has a positive spin polarization, a positive magnetostriction, and a polycrystalline structure. The free layer further comprises a second magnetic layer disposed over the first magnetic layer. The second magnetic layer has a negative magnetostriction and comprises at least cobalt (Co) and boron (B).

Abstract: A magnetic sensor is configured to reside in proximity to a recording medium during use. The sensor includes a magnetic top shield and a magnetic bottom shield. A top sensor stack is under the magnetic top shield and includes magnetic sensing layers. A bottom sensor stack is between the magnetic bottom shield and the top sensor stack. The bottom sensor stack includes a magnetic seed stack above the bottom shield, an insertion stack above the magnetic seed stack, and an antiferromagnetic (AFM) layer on and in contact with the insertion stack. A pinned layer is above the AFM layer. An AFM coupling layer is above the pinned layer. In some aspects the insertion stack may include at least one of Ti, Hf, Zr, and Ta. In some aspect, the insertion stack includes a layer of elemental Ti. In other aspects, the insertion stack includes multilayer structures.

Abstract: A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a magnetoresistive sensor a shield, and a spin pumping barrier layer. The magnetoresistive sensor includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonmagnetic and resides between the pinned layer and the free layer. The free layer is between the pinned layer and the shield. The spin pumping barrier layer is between the shield and the free layer.

Abstract: A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a bilayer magnetic seed layer, an antiferromagnetic (AFM) layer, and a read sensor. The bilayer magnetic seed layer includes a Ni1-xFex layer and a Ni1-yFey layer on the Ni1-xFex layer, where x is at least 0.3 and not more than 1 and where y is not more than 0.19. The AFM layer resides on the bilayer magnetic seed layer. The read sensor is on the AFM layer.

Abstract: A method for providing a magnetic recording transducer is described. The method includes providing a pinned layer for a magnetic element. In one aspect, a portion of a tunneling barrier layer for the magnetic element is provided. The magnetic recording transducer annealed is after the portion of the tunneling barrier layer is provided. The annealing is at a temperature higher than room temperature. A remaining portion of the tunneling barrier layer is provided after the annealing. In another aspect, the magnetic transducer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. In this aspect, the magnetic transducer may be annealed before any portion of the tunneling barrier is provided or after at least a portion of the tunneling barrier is provided. The annealing is performed in the high vacuum annealing apparatus. A free layer for the magnetic element is also provided.

Abstract: A method and system for providing a magnetic structure in magnetic transducer is described. The magnetic structure includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a first magnetic layer, a second magnetic layer, and a magnetic insertion layer between the first magnetic layer and the second magnetic layer. The first magnetic layer has a first magnetostriction. The second magnetic layer has a second magnetostriction opposite to the first magnetostriction. The magnetic insertion layer provides a growth texture barrier between the first magnetic layer and the second magnetic layer.

Abstract: A method and system for providing a magnetic transducer are disclosed. The method and system include providing a magnetic element that includes a free layer, a pinned layer, and a nonmagnetic spacer layer between the free layer and the pinned layer. The nonmagnetic spacer layer is a tunneling barrier layer. The free layer is configured to be biased in a first direction. The pinned layer has a pinned layer magnetization configured to be pinned in a second direction that is at a first angle from perpendicular to the ABS. The first angle is nonzero and different from ninety degrees. The second direction and the first direction form a second angle that is different from ninety degrees.

Abstract: A method and system for providing a magnetic structure in magnetic transducer is described. The method and system include providing a pinning layer, a synthetic antiferromagnetic (SAF) adjacent to the pinning layer, a nonmagnetic layer, and a sensor layer. The SAF resides between the nonmagnetic and pinning layers. The nonmagnetic layer is between the SAF and the sensor layer. The SAF includes a pinned layer, a reference layer, and a nonmagnetic spacer layer between the pinned and reference layers. The pinned layer is magnetically coupled with the reference layer and includes sublayers. A first sublayer has a first blocking temperature distribution (TBD) and a first exchange energy. A second sublayer has a second TBD and a second exchange energy. The first sublayer is between the pinning layer and second sublayer. The first TBD is greater than the second TBD. The first exchange energy is less than the second exchange energy.

Abstract: A method and system for providing a magnetic structure in magnetic transducer is described. The method and system include providing a pinning layer, a synthetic antiferromagnetic (SAF) adjacent to the pinning layer, a nonmagnetic layer, and a sensor layer. The SAF resides between the nonmagnetic and pinning layers. The nonmagnetic layer is between the SAF and the sensor layer. The SAF includes a pinned layer, a reference layer, and a nonmagnetic spacer layer between the pinned and reference layers. The pinned layer is magnetically coupled with the reference layer and includes sublayers. A first sublayer has a first blocking temperature distribution (TBD) and a first exchange energy. A second sublayer has a second TBD and a second exchange energy. The first sublayer is between the pinning layer and second sublayer. The first TBD is greater than the second TBD. The first exchange energy is less than the second exchange energy.

Abstract: A method and system for providing a magnetic transducer are disclosed. The method and system include providing a magnetic element that includes a free layer, a pinned layer, and a nonmagnetic spacer layer between the free layer and the pinned layer. The nonmagnetic spacer layer is a tunneling barrier layer. The free layer is configured to be biased in a first direction. The pinned layer has a pinned layer magnetization configured to be pinned in a second direction that is at a first angle from perpendicular to the ABS. The first angle is nonzero and different from ninety degrees. The second direction and the first direction form a second angle that is different from ninety degrees.

Abstract: A method and system for providing a magnetic recording transducer is described. The method and system include providing a pinned layer for a magnetic element. In one aspect, a portion of a tunneling barrier layer for the magnetic element is provided. The magnetic recording transducer annealed is after the portion of the tunneling barrier layer is provided. The annealing is at a temperature higher than room temperature. A remaining portion of the tunneling barrier layer is provided after the annealing. In another aspect, the magnetic transducer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. In this aspect, the magnetic transducer may be annealed before any portion of the tunneling barrier is provided or after at least a portion of the tunneling barrier is provided. The annealing is performed in the high vacuum annealing apparatus. A free layer for the magnetic element is also provided.