Abstract: A process for the production of glycols is provided, the process comprising contacting a saccharide-containing feedstock with hydrogen in the presence of a catalyst composition and a solvent, wherein the solvent comprises water and at least 25% by weight, based on the total weight of the solvent, of one or more alcohols selected from a C1 to C6 alcohol, a C1 to C6 polyalcohol, and a combination thereof.

Abstract: The present invention relates to a flash memory system comprising one or more sense amplifiers for reading data stored in flash memory cells. The sense amplifiers utilize fully depleted silicon-on-insulator transistors to minimize leakage. The fully depleted silicon-on-insulator transistors comprise one or more fully depleted silicon-on-insulator NMOS transistors and/or one or more fully depleted silicon-on-insulator PMOS transistors.

Abstract: Operating an application in response to spatial status of objects within a physical environment in which the application operates. A system detects the spatial status (e.g., orientation, movement, position, and so forth) of multiple environmental objects that operate within a physical environment from which input is provided to, and to which output is provided from, an application. The relationship between at least some different environmental objects result in altered a behavior of the application. The spatial status of at least some of the environmental objects is subject to change. Thus, a mechanism is described that allows an application to adjust in a manner that is highly responsive to the physical environment in which the application interfaces.

Abstract: Techniques are presented for constructing a digital representation of a physical environment. In some embodiments, a method includes obtaining image data indicative of the physical environment; receiving gesture input data from a user corresponding to at least one location in the physical environment, based on the obtained image data; detecting at least one discontinuity in the physical environment near the at least one location corresponding to the received gesture input data; and generating a digital surface corresponding to a surface in the physical environment, based on the received gesture input data and the at least one discontinuity.

Abstract: The present invention relates to a flash memory system wherein one or more circuit blocks utilize fully depleted silicon-on-insulator transistor design to minimize leakage.

Abstract: A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.

Abstract: Techniques are presented for constructing a digital representation of a physical environment. In some embodiments, a method includes obtaining image data indicative of the physical environment; receiving gesture input data from a user corresponding to at least one location in the physical environment, based on the obtained image data; detecting at least one discontinuity in the physical environment near the at least one location corresponding to the received gesture input data; and generating a digital surface corresponding to a surface in the physical environment, based on the received gesture input data and the at least one discontinuity.

Abstract: A non-volatile memory device that a semiconductor substrate of a first conductivity type. An array of non-volatile memory cells is in the semiconductor substrate arranged in a plurality of rows and columns. Each memory cell comprises a first region on a surface of the semiconductor substrate of a second conductivity type, and a second region on the surface of the semiconductor substrate of the second conductivity type. A channel region is between the first region and the second region. A word line overlies a first portion of the channel region and is insulated therefrom, and adjacent to the first region and having little or no overlap with the first region. A floating gate overlies a second portion of the channel region, is adjacent to the first portion, and is insulated therefrom and is adjacent to the second region. A coupling gate overlies the floating gate. A bit line is connected to the first region. A negative charge pump circuit generates a first negative voltage.

Abstract: An improved method and apparatus for performing power management in a memory device is disclosed.

Abstract: Improved flash memory sensing circuits are disclosed. In one embodiment, a sensing circuit comprises a memory data read block, a memory reference block, a differential amplifier, and a precharge circuit. The precharge circuit compensates for parasitic capacitance between a bit line coupled to a selected memory cell and adjacent bit lines.

Abstract: An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed.

Abstract: Described herein are methods and compositions relating to engineered curli fibers, e.g. CsgA polypeptide. In some embodiments, the methods and compositions described herein relate to functionalized biofilms.

Abstract: A three-dimensional flash memory system is disclosed. The system comprises a memory array comprising a plurality of stacked dies, where each die comprises memory cells. The system further comprises a plurality of pins, where the function of at least some of the pins can be configured using a mechanism that selects a function for those pins from a plurality of possible functions.

Abstract: A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.

Abstract: The disclosure relates to apparatuses for producing a glass ribbon, the apparatuses comprising a melting vessel, a forming vessel, and a volatile filtration system configured to receive at least a portion of a vapor comprising at least one volatilized component from the forming vessel, the volatile filtration system comprising a transfer vessel operating at a first temperature above a condensation point of the vapor and a quenching chamber operating at a second temperature below a solidification temperature of the volatilized component. Also disclosed herein are methods for producing a glass ribbon using such apparatuses and volatile filtration systems.

Abstract: Mechanisms for a presentation module to perform distributed interfacing with an application across a plurality of hardware entities. The module identifies the hardware entities that are available to interface with endpoints of an application. The presentation module performs distribution of assignment of hardware entities to interact with the endpoints by, for each of at least some of the hardware entities, determining a subset of endpoints with which the corresponding hardware entities is to interface. Furthermore, the application is operated in that state to thereby detect interaction of at least some of the hardware entities with the application via at least some of the endpoints. Thus, distributed interfacing of hardware entities with an application is facilitated.

Abstract: A system and method for improved power sequencing within an embedded flash memory device is disclosed.

Abstract: An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed.

Abstract: A three-dimensional flash memory system is disclosed.

Abstract: Cephem compounds, pharmaceutically acceptable salts thereof, and methods of using same, wherein the compound has a bicyclic nitrogen-containing aromatic heterocyclic ring as the quaternary ammoniomethyl group at the 3-position and one or both of a terminal amidine residue (substituted or unsubstituted) attached to an aryl or a 5- or 6-membered heteroaryl group (substituted or unsubstituted) which is further attached through a spacer to the free N-atom of the quaternary nitrogen-containing bicyclic ring at the 3-side chain, or a terminal guanidine residue attached to an aryl or a 5- or 6-membered heteroaryl group (substituted or unsubstituted) which is further attached through a spacer to the free N-atom of the quaternary nitrogen-containing bicyclic ring at the 3-side chain.