Patents by Inventor R. Bennett

R. Bennett has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9006708
    Abstract: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: April 14, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, Theresa F. Chick, Mario G. Ancona, John Bradley Boos
  • Publication number: 20150085488
    Abstract: A dual lighting apparatus includes a principal substrate, a first lighting device and a second lighting device. The first lighting device is integrated into a first plane of the principal substrate, the first lighting device having one or more first light emitting diode (LED) chips embedded therein. The second lighting device is integrated into a second plane of the principal substrate, the second lighting device having one or more second light emitting diode (LED) chips embedded therein. The first LED chip(s) emit light photons having a different wavelength than light photons emitted from the second LED chip(s).
    Type: Application
    Filed: October 31, 2014
    Publication date: March 26, 2015
    Inventors: William Grote, III, Richard C. Bozich, Stanley D. Robbins, James E. Roberts, Martin J. Marx, Jennifer M. Ehlers, Arturo Hernandez, Larry R. Bennett
  • Publication number: 20150014745
    Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.
    Type: Application
    Filed: October 2, 2014
    Publication date: January 15, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, John Bradley Boos, Theresa F. Chick, James G. Champlain
  • Patent number: 8906354
    Abstract: The present invention relates to a loaded particle comprising at least one fluorescent dye, and in particular, a fluorescent dye with a large Stokes shift. The invention further relates to a method for producing an loaded latex particle, loaded with a fluorescent dye having a large stokes shift. In addition, the present invention relates to latex particles loaded with fluorescent dyes that are organic solvent soluble and insoluble in water. In a preferred embodiment, when the dyes are loaded into the water soluble latex particle, an increase is observed in quantum yield of fluorescence as compared to the quantum yield of the dye in aqueous solvent.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: December 9, 2014
    Assignee: Bruker Biospin Corporation
    Inventors: Tao Ji, Hans F. Schmitthenner, Yonghong Yang, John W. Harder, Jeffrey W. Leon, William J. Harrison, Brian J. Kelley, James R. Bennett, David A. Stegman, Ruizheng Wang
  • Publication number: 20140339501
    Abstract: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of InwAl1?wAs on a semi-insulating (100) InP substrate, where the InwAl1?wAs is lattice matched to InP, followed by an AlAsxSb1?x buffer layer on the InwAl1?wAs layer, an AlAsxSb1?x spacer layer on the buffer layer, a GaSb quantum well layer on the spacer layer, an AlAsxSb1?x barrier layer on the quantum well layer, an InyAl1?ySb layer on the barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.
    Type: Application
    Filed: May 16, 2013
    Publication date: November 20, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, Theresa F. Chick, Mario G. Ancona, John Bradley Boos
  • Patent number: 8884265
    Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.
    Type: Grant
    Filed: January 16, 2014
    Date of Patent: November 11, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, John Bradley Boos, Theresa F. Chick, James G. Champlain
  • Publication number: 20140310095
    Abstract: A system is disclosed for detecting and handling click fraud in a mobile environment. The system may identify a source of a request. The request may be handled differently based on whether the source of the request originated from mobile traffic or web traffic. The source of the request may be used to determine whether a request is valid or invalid. The request may be flagged if the request is invalid.
    Type: Application
    Filed: June 26, 2014
    Publication date: October 16, 2014
    Applicant: Yahoo! Inc.
    Inventors: Arvind Gupta, Ashutosh Tiwari, Gopalakrishnan Venkatraman, Dominic Cheung, Stacy R. Bennett, Douglas B. Koen
  • Publication number: 20140264278
    Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.
    Type: Application
    Filed: January 16, 2014
    Publication date: September 18, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, John Bradley Boos, Theresa F. Chick, James G. Champlain
  • Patent number: 8832524
    Abstract: Storage of digital data in non-volatile media such as NAND FLASH needs to take account of the errors in data retrieved from the memory. The error rate tends to increase with the number of write/erase cycles of a cell of memory and with the time that the data has been stored. To achieve a very low uncorrected bit error rate (UBER) a substantial amount of redundancy data needs to be stored for error correction purposes. A method and apparatus is disclosed where a first redundancy data is represented by a second redundancy data computed from the first redundancy data. The first redundancy data may not be stored and is reconstructed from the stored data using a same generation procedure as previously used. The reconstructed estimate of the first redundancy data is corrected by the second redundancy data, and is used to correct the underlying data.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: September 9, 2014
    Assignee: Violin Memory, Inc.
    Inventor: Jon C. R. Bennett
  • Patent number: 8815395
    Abstract: A high density polymer particle includes a cross-linked organic polymer host matrix; and a high density metal provided within the interior of the cross-linked organic polymer host matrix.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: August 26, 2014
    Assignee: Eastman Kodak Company
    Inventors: David Francis Jennings, James R. Bennett, Mridula Nair, Mary Christine Brick
  • Publication number: 20140217363
    Abstract: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.
    Type: Application
    Filed: May 16, 2013
    Publication date: August 7, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, Theresa F. Chick, Mario G. Ancona, John Bradley Boos
  • Patent number: 8799069
    Abstract: A system is disclosed for detecting and handling click fraud in a mobile environment. The system may identify a source of a request. The request may be handled differently based on whether the source of the request originated from mobile traffic or web traffic. The source of the request may be used to determine whether a request is valid or invalid. The request may be flagged if the request is invalid.
    Type: Grant
    Filed: December 21, 2007
    Date of Patent: August 5, 2014
    Assignee: Yahoo! Inc.
    Inventors: Arvind Gupta, Ashutosh Tiwari, Gopalakrishnan Venkatraman, Dominic Cheung, Stacy R. Bennett, Douglas B. Koen
  • Patent number: 8726064
    Abstract: An interconnection system, apparatus and method is described for arranging elements in a network, which may be a data memory system, computing system or communications system where the data paths are arranged and operated so as to control the power consumption and data skew properties of the system. A configurable switching element may be used to form the interconnections at nodes, where a control signal and other information is used to manage the power status of other aspects of the configurable switching element. Time delay skew of data being transmitted between nodes of the network may be altered by exchanging the logical and physical line assignments of the data at one or more nodes of the network. A method of laying out an interconnecting motherboard is disclosed which reduces the complexity of the trace routing.
    Type: Grant
    Filed: April 17, 2006
    Date of Patent: May 13, 2014
    Assignee: Violin Memory Inc.
    Inventor: Jon C. R. Bennett
  • Publication number: 20140114762
    Abstract: A system for providing mobile advertisement actions may include a memory to store a request, mobile carrier data, mobile advertisement data, and mobile advertisement action data. The system may include an interface operatively connected to the memory to communicate with a mobile device. The system may include a processor operatively connected to the memory and the interface. The processor may receive information and a request from the mobile device via the interface and may determine the mobile carrier data relating to a mobile carrier associated with the mobile device. The processor may identify the mobile advertisement data and the mobile advertisement action targeted to the request and the mobile carrier data. The processor may append the mobile advertisement action data to the mobile advertisement data. The processor may provide the mobile advertisement data with the appended mobile advertisement action data to the mobile device via the interface.
    Type: Application
    Filed: December 30, 2013
    Publication date: April 24, 2014
    Applicant: Yahoo! Inc.
    Inventors: Arvind GUPTA, Ashutosh Tiwari, Gopalakrishnan Venkatraman, Dominic Cheung, Stacy R. Bennett, Douglas B. Koen
  • Patent number: 8652959
    Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: February 18, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Brian R. Bennett, John Bradley Boos, Mario Ancona, James G. Champlain, Nicolas A. Papanicolaou
  • Publication number: 20140039687
    Abstract: A method, system, and control system for operating a HVAC system having one or more variable-speed components is provided. The method includes running the one or more variable-speed components at a first setpoint, and determining that the first setpoint generates a response having an intensity above a threshold. The response includes a vibration, a noise, or a combination thereof. The method further includes logging the first setpoint into a list of setpoints to avoid. The method also includes, in response to determining that the first setpoint generates the response having the intensity above the threshold, adjusting the one or more variable-speed components to a second setpoint.
    Type: Application
    Filed: August 1, 2013
    Publication date: February 6, 2014
    Applicant: CARRIER CORPORATION
    Inventors: Kevin Mercer, Dale R. Bennett, Robert C. Swilik
  • Patent number: 8644808
    Abstract: A system for providing mobile advertisement actions may include a memory to store a request, mobile carrier data, mobile advertisement data, and mobile advertisement action data. The system may include an interface operatively connected to the memory to communicate with a mobile device. The system may include a processor operatively connected to the memory and the interface. The processor may receive information and a request from the mobile device via the interface and may determine the mobile carrier data relating to a mobile carrier associated with the mobile device. The processor may identify the mobile advertisement data and the mobile advertisement action targeted to the request and the mobile carrier data. The processor may append the mobile advertisement action data to the mobile advertisement data. The processor may provide the mobile advertisement data with the appended mobile advertisement action data to the mobile device via the interface.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: February 4, 2014
    Assignee: Yahoo! Inc.
    Inventors: Arvind Gupta, Ashutosh Tiwari, Gopalakrishnan Venkatraman, Dominic Cheung, Stacy R. Bennett, Douglas B. Koen
  • Publication number: 20140017498
    Abstract: A high density polymer particle includes a cross-linked organic polymer host matrix; and a high density metal provided within the interior of the cross-linked organic polymer host matrix.
    Type: Application
    Filed: July 13, 2012
    Publication date: January 16, 2014
    Inventors: David Francis Jennings, James R. Bennett, Mridula Nair, Mary Christine Brick
  • Patent number: D724729
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: March 17, 2015
    Inventor: John R. Bennett
  • Patent number: D726909
    Type: Grant
    Filed: July 17, 2013
    Date of Patent: April 14, 2015
    Inventor: John R. Bennett