Abstract: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

Abstract: A dual lighting apparatus includes a principal substrate, a first lighting device and a second lighting device. The first lighting device is integrated into a first plane of the principal substrate, the first lighting device having one or more first light emitting diode (LED) chips embedded therein. The second lighting device is integrated into a second plane of the principal substrate, the second lighting device having one or more second light emitting diode (LED) chips embedded therein. The first LED chip(s) emit light photons having a different wavelength than light photons emitted from the second LED chip(s).

Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Abstract: The present invention relates to a loaded particle comprising at least one fluorescent dye, and in particular, a fluorescent dye with a large Stokes shift. The invention further relates to a method for producing an loaded latex particle, loaded with a fluorescent dye having a large stokes shift. In addition, the present invention relates to latex particles loaded with fluorescent dyes that are organic solvent soluble and insoluble in water. In a preferred embodiment, when the dyes are loaded into the water soluble latex particle, an increase is observed in quantum yield of fluorescence as compared to the quantum yield of the dye in aqueous solvent.

Abstract: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of InwAl1?wAs on a semi-insulating (100) InP substrate, where the InwAl1?wAs is lattice matched to InP, followed by an AlAsxSb1?x buffer layer on the InwAl1?wAs layer, an AlAsxSb1?x spacer layer on the buffer layer, a GaSb quantum well layer on the spacer layer, an AlAsxSb1?x barrier layer on the quantum well layer, an InyAl1?ySb layer on the barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Abstract: A system is disclosed for detecting and handling click fraud in a mobile environment. The system may identify a source of a request. The request may be handled differently based on whether the source of the request originated from mobile traffic or web traffic. The source of the request may be used to determine whether a request is valid or invalid. The request may be flagged if the request is invalid.

Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Abstract: Storage of digital data in non-volatile media such as NAND FLASH needs to take account of the errors in data retrieved from the memory. The error rate tends to increase with the number of write/erase cycles of a cell of memory and with the time that the data has been stored. To achieve a very low uncorrected bit error rate (UBER) a substantial amount of redundancy data needs to be stored for error correction purposes. A method and apparatus is disclosed where a first redundancy data is represented by a second redundancy data computed from the first redundancy data. The first redundancy data may not be stored and is reconstructed from the stored data using a same generation procedure as previously used. The reconstructed estimate of the first redundancy data is corrected by the second redundancy data, and is used to correct the underlying data.

Abstract: A high density polymer particle includes a cross-linked organic polymer host matrix; and a high density metal provided within the interior of the cross-linked organic polymer host matrix.

Abstract: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

Abstract: A system is disclosed for detecting and handling click fraud in a mobile environment. The system may identify a source of a request. The request may be handled differently based on whether the source of the request originated from mobile traffic or web traffic. The source of the request may be used to determine whether a request is valid or invalid. The request may be flagged if the request is invalid.

Abstract: An interconnection system, apparatus and method is described for arranging elements in a network, which may be a data memory system, computing system or communications system where the data paths are arranged and operated so as to control the power consumption and data skew properties of the system. A configurable switching element may be used to form the interconnections at nodes, where a control signal and other information is used to manage the power status of other aspects of the configurable switching element. Time delay skew of data being transmitted between nodes of the network may be altered by exchanging the logical and physical line assignments of the data at one or more nodes of the network. A method of laying out an interconnecting motherboard is disclosed which reduces the complexity of the trace routing.

Abstract: A system for providing mobile advertisement actions may include a memory to store a request, mobile carrier data, mobile advertisement data, and mobile advertisement action data. The system may include an interface operatively connected to the memory to communicate with a mobile device. The system may include a processor operatively connected to the memory and the interface. The processor may receive information and a request from the mobile device via the interface and may determine the mobile carrier data relating to a mobile carrier associated with the mobile device. The processor may identify the mobile advertisement data and the mobile advertisement action targeted to the request and the mobile carrier data. The processor may append the mobile advertisement action data to the mobile advertisement data. The processor may provide the mobile advertisement data with the appended mobile advertisement action data to the mobile device via the interface.

Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Abstract: A method, system, and control system for operating a HVAC system having one or more variable-speed components is provided. The method includes running the one or more variable-speed components at a first setpoint, and determining that the first setpoint generates a response having an intensity above a threshold. The response includes a vibration, a noise, or a combination thereof. The method further includes logging the first setpoint into a list of setpoints to avoid. The method also includes, in response to determining that the first setpoint generates the response having the intensity above the threshold, adjusting the one or more variable-speed components to a second setpoint.

Abstract: A system for providing mobile advertisement actions may include a memory to store a request, mobile carrier data, mobile advertisement data, and mobile advertisement action data. The system may include an interface operatively connected to the memory to communicate with a mobile device. The system may include a processor operatively connected to the memory and the interface. The processor may receive information and a request from the mobile device via the interface and may determine the mobile carrier data relating to a mobile carrier associated with the mobile device. The processor may identify the mobile advertisement data and the mobile advertisement action targeted to the request and the mobile carrier data. The processor may append the mobile advertisement action data to the mobile advertisement data. The processor may provide the mobile advertisement data with the appended mobile advertisement action data to the mobile device via the interface.

Abstract: A high density polymer particle includes a cross-linked organic polymer host matrix; and a high density metal provided within the interior of the cross-linked organic polymer host matrix.