Abstract: A digital imaging system is provided with direct view of an object, having: an optical element configured to allow visible light to pass therethrough to a user's eye and to redirect light of non-visible wavelengths away from the user's eye; a display disposed between the user's eye and the object; a digital camera mounted outside a field of view of the user's eye and configured to obtaining imaging data from the light of non-visible wavelength; a redirection optic disposed so as to redirect the light of non-visible wavelength to the digital camera; and an image processor configured to process the imaging data from the digital camera and output the data to the display such that an image generated from the imaging data from the digital camera overlays an image produced by the impingement of visible light on the user's eye following the visible light's passing through the optical element.

Abstract: A digital imaging system is provided with direct view of an object, having: an optical element configured to allow visible light to pass therethrough to a user's eye and to redirect light of non-visible wavelengths away from the user's eye; a display disposed between the user's eye and the object; a digital camera mounted outside a field of view of the user's eye and configured to obtaining imaging data from the light of non-visible wavelength; a redirection optic disposed so as to redirect the light of non-visible wavelength to the digital camera; and an image processor configured to process the imaging data from the digital camera and output the data to the display such that an image generated from the imaging data from the digital camera overlays an image produced by the impingement of visible light on the user's eye following the visible light's passing through the optical element.

Abstract: A hybrid frame-based and event driven pixel, the pixel comprising a frame-based capture circuit, an event-driven capture circuit, and a photodiode in electrical communication with both the frame-based and event-driven capture circuits, wherein the frame based capture circuit is a buffered direct injection circuit, and wherein the event-driven capture circuit is a dynamic vision system circuit.

Abstract: A hybrid frame-based and event driven pixel, the pixel comprising a frame-based capture circuit, an event-driven capture circuit, and a photodiode in electrical communication with both the frame-based and event-driven capture circuits, wherein the frame-based capture circuit is a capacitive transimpedance amplifier circuit, and wherein the event-driven capture circuit is a linear asynchronous event representation circuit.

Abstract: A hybrid frame-based and event driven pixel, the pixel comprising a frame-based capture circuit, an event-driven capture circuit, and a photodiode in electrical communication with both the frame-based and event-driven capture circuits, wherein the frame based capture circuit is a buffered direct injection circuit, and wherein the event-driven capture circuit is a dynamic vision system circuit.

Abstract: A low light level imaging apparatus comprising an image sensor having a plurality of pixels, where the image sensor is configured to readout in an interlaced manner to a display that allows for real-time viewing of image sensor data by a user or users, where some users may be remote from the low light level imaging apparatus, in the form of a video stream.

Abstract: A seeker includes a detection array having at least 2500 sensing pixels arranged in rows by row request lines and in columns by column request lines. At least one pixel includes an electromagnetic radiation sensor to trigger the pixel in response to sensing a triggering quantity of electromagnetic radiation, a row request circuit to send a row request after the pixel triggers, and a column request circuit to send a column request after the pixel triggers. The seeker further includes a row receiver to receive the row requests, a column receiver to receive the column requests, and a sequencer to receive, for each triggering pixel, the row of the row request and the column of the column request, and to generate an event including the received row and column of the pixel. The seeker also includes a time stamper to generate a time stamp for the generated event.

Abstract: An imaging array and method for using the same are disclosed. The imaging array includes a plurality of pixel sensors connected to a bit line, each pixel sensor includes a photodetector that includes a photodiode, a floating diffusion node, and a buffer connected to the floating diffusion node that produces a pixel output signal having a voltage that is a monotonic function of a voltage on the floating diffusion node. Each pixel sensor also include an overflow capacitor connected to the photodiode by an overflow transfer gate that allows photocharge in excess of a predetermined charge to flow onto the overflow capacitor. The charge accumulated on the photodiode and the overflow capacitor are combined to provide an improved dynamic range for the pixel sensors.

Abstract: An extended range Compatible Metal Oxide Semiconductor Image Sensor and method for operating it is provided, the sensor comprising: a first conversion node; a first switch connected to said first conversion node; a second switch disposed in series with said first switch; and a capacitive element disposed between said first and said second switches.

Abstract: A seeker includes a detection array having at least 2500 sensing pixels arranged in rows by row request lines and in columns by column request lines. At least one pixel includes an electromagnetic radiation sensor to trigger the pixel in response to sensing a triggering quantity of electromagnetic radiation, a row request circuit to send a row request after the pixel triggers, and a column request circuit to send a column request after the pixel triggers. The seeker further includes a row receiver to receive the row requests, a column receiver to receive the column requests, and a sequencer to receive, for each triggering pixel, the row of the row request and the column of the column request, and to generate an event including the received row and column of the pixel. The seeker also includes a time stamper to generate a time stamp for the generated event.

Abstract: An image sensor suitable for low light level imaging, the image sensor having a plurality of pixels, each pixel having nMOS and pMOS components, provides a lower noise threshold as compared to prior art single-flavor pixels.

Abstract: An image sensor suitable for low light level imaging, the image sensor having a plurality of pixels, each pixel having nMOS and pMOS components, provides a lower noise threshold as compared to prior art single-flavor pixels.

Abstract: An extended range Compatible Metal Oxide Semiconductor Image Sensor and method for operating it is provided, the sensor comprising: a first conversion node; a first switch connected to said first conversion node; a second switch disposed in series with said first switch; and a capacitive element disposed between said first and said second switches.

Abstract: A pixel comprises a high-response photodiode that collects photocharge, a first transfer gate that enables the charge to be transferred off the high-response photodiode, completely emptying it onto a low-response photodiode, a second transfer gate enables the charge to be transferred off the low-response photodiode, completely emptying it onto floating diffusion, a third transfer gate for anti-blooming; the floating diffusion collects the transferred charge creating a change of voltage, a means of resetting the floating diffusion. A source-follower is modulated by the voltage on floating diffusion to control bit-line voltage and column-amplifier output. In examples, photocharge is integrated onto both the high-response photodiode and onto the low-response photodiode.

Abstract: A pixel comprises a high-response photodiode that collects photocharge, a first transfer gate that enables the charge to be transferred off the high-response photodiode, completely emptying it onto a low-response photodiode, a second transfer gate enables the charge to be transferred off the low-response photodiode, completely emptying it onto floating diffusion, a third transfer gate for anti-blooming; the floating diffusion collects the transferred charge creating a change of voltage, a means of resetting the floating diffusion. A source-follower is modulated by the voltage on floating diffusion to control bit-line voltage and column-amplifier output. In examples, photocharge is integrated onto both the high-response photodiode and onto the low-response photodiode.

Abstract: Methods and substrates for laser annealing are disclosed. The substrate includes a target region to be annealed and a plurality of reflective interfaces. The reflective interfaces cause energy received by the substrate to resonate within the target region. The method includes emitting energy toward the substrate with a laser, receiving the energy with the substrate, and reflecting the received energy with a plurality of reflective interfaces embedded in the substrate to generate a resonance within the target region.

Abstract: A method for lowering dark current in an image sensor pixel, the method includes the steps of providing a photosensitive area for receiving incident light which is converted into a charge; providing a gate for transferring charge from the photosensitive area; wherein the gate is held at a voltage which will accumulate majority carriers at a semiconductor-dielectric interface during integration for the photosensitive area. Alternatively, a potential profile can be provided under the gate to drain the dark current away from the photogeneration diffusion.

Abstract: An image sensor includes a plurality of photosensitive sites; a plurality of asymmetrical-shaped microlenses positioned spanning the photosensitive sites; wherein incoming light is directed in a predetermined direction by an asymmetrical surface of the asymmetrical-shaped microlenses onto the photosensitive sites for capturing the light in a substantially uniform manner.

Abstract: An image sensor includes a two-dimensional array of pixels having a photodetector for collecting charge in response to incident light; a storage region adjacent the photodetector that receives the charge from the photodetector; a sense node adjacent the storage region that receives the charge from the storage region and converts the charge to a voltage signal; and an input to an amplifier for sensing the voltage signal from the sense node.

Abstract: An electronic exposure control system for an active pixel CMOS image sensor includes a row decoder and a column decoder for respective row-wise and column-wise addressing of the image signal generating pixels. The decoders receive row and column addresses and control signals from a controller. The row addresses received by the row decoder are alternately switched between a predetermined row address for resetting the image signals of pixels in said row and another predetermined spaced apart row address for enabling the image signals of pixels in said selected row to be read out by the column decoder. By providing a predetermined sequence of row addresses, a “rolling shutter” can be created and/or the exposure time of the pixels can be selected to be different from the time to expose an entire frame. The image sensor can also be operated in an interlaced mode and/or specific areas on the image sensor can be selected to be reset and read out.