Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.

Abstract: A system includes a ring magnet having magnetic segments and configured to rotate about an axis of rotation, wherein adjacent segments have different magnetic polarities, The system can further include a substrate positioned so that a top surface of the substrate is substantially parallel to the axis of rotation and a center plane passing through the ring magnet and perpendicular to the axis of rotation of the ring magnet intersects the top surface at an intersection line. The system can further include four magnetic field sensing elements supported by the substrate and electrically coupled to form a first bridge circuit, wherein two of the four magnetic field sensing elements are positioned on one side of the intersection line and the other two of the four magnetic field sensing elements are positioned on the other side of the intersection line.

Abstract: In one aspect, a dual double-pinned spin valve element includes a first spin valve that includes a first pinned layer and a second pinned layer and a second spin valve disposed on the first spin valve and comprising a third pinned layer and a fourth pinned layer. The first, second, third and fourth pinned layers each have a magnetization in a first direction.

Abstract: In one aspect, a magnetic field angle sensor includes a bridge structure that include a sine bridge configured to generate a sinusoidal signal indicative of a magnetic field along a first axis and a cosine bridge configured to generate a cosinusoidal signal indicative of the magnetic field along a second axis that is orthogonal with respect to the first axis. One of the sine bridge or the cosine bridge includes a first set of at least two magnetoresistance elements, a second set of at least one magnetoresistance element, a third set of at least one magnetoresistance element and a fourth set of at least one magnetoresistance element. An average reference direction of the first set of at least two magnetoresistance elements is equal to an average reference direction of the third set of at least one magnetoresistance element.

Abstract: In one aspect, a bridge includes a first magnetoresistance element that includes a first set of pillars, a second magnetoresistance element that includes a second set of pillars, a third magnetoresistance element that includes a third set of pillars and a fourth magnetoresistance element that includes a fourth set of pillars. The first set of pillars and the fourth set of pillars are disposed in a first matrix and the second set of pillars and the third set of pillars are disposed in a second matrix. The second magnetoresistance element is in series with the first magnetoresistance element, the third magnetoresistance element is in parallel with the first magnetoresistance element and the fourth magnetoresistance element is in series with the third magnetoresistance element.

Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.

Abstract: In one aspect, a bridge includes a first magnetoresistance element that includes a first set of pillars, a second magnetoresistance element that includes a second set of pillars, a third magnetoresistance element that includes a third set of pillars and a fourth magnetoresistance element that includes a fourth set of pillars. The first set of pillars and the fourth set of pillars are disposed in a first matrix and the second set of pillars and the third set of pillars are disposed in a second matrix. The second magnetoresistance element is in series with the first magnetoresistance element, the third magnetoresistance element is in parallel with the first magnetoresistance element and the fourth magnetoresistance element is in series with the third magnetoresistance element.

Abstract: In one aspect, a bridge includes a first magnetoresistance element having a first reference angle; a second magnetoresistance element in series with the first magnetoresistance element and having a second reference angle; a third magnetoresistance element in parallel with the first magnetoresistance element and having the first reference angle; and a fourth magnetoresistance element in series with the third magnetoresistance element and having the second reference angle. An output of the bridge has a linear response over a range of horizontal magnetic field values having non-zero values and the range of horizontal magnetic field intensity values are associated with vertical magnetic field intensity values having zero Oersted (Oe) values. A reference angle indicates an angle the magnetoresistance element is most sensitive to changes in a magnetic field.

Abstract: In one aspect, a bridge includes a first magnetoresistance element having a first reference angle, a second magnetoresistance element in series with the first magnetoresistance element and having a second reference angle, a third magnetoresistance element in parallel with the first magnetoresistance element and having the first reference angle and a fourth magnetoresistance element in series with the third magnetoresistance element and having the second reference angle. An output of the bridge has a linear response over a range of horizontal magnetic field values not centered about a zero value and a reference angle indicates an angle the magnetoresistance element is most sensitive to changes in a magnetic field.

Abstract: In one aspect, an angle sensor includes a first linear sensor and a second linear sensor. A first magnetic-field direction of a target magnet measured by the first linear sensor is substantially equal to a second magnetic-field direction of the target magnet measured by the second linear sensor. The first linear sensor, the second linear sensor and the target magnet are on an axis. The angle sensor determines an angle of a magnetic field.

Abstract: A current sensor can indirectly measure a sensed current by directly measuring static perturbing AC magnetic fields with magnetoresistance elements, the perturbing magnetic fields generated by perturbing coils. The sensed current can be indirectly measured by modulating or changing sensitivities of the magnetoresistance elements in a way that is directly related to the sensed current.

Abstract: A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of layers including a first spacer layer having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field. The MR element also has a second stack portion comprising a second plurality of layers, including a second spacer layer having a second thickness to result in the second stack portion having a second sensitivity to the applied magnetic field. The first thickness may be different than the second thickness resulting in the first sensitivity being different than the second sensitivity.

Abstract: A magnetoresistance element structure disposed parallel to an x-y plane defined by an x-axis and a y-axis orthogonal to the x-axis can include a first magnetoresistance element having a plurality of first shapes coupled in series to result in the first magnetoresistance element having a first serpentine shape parallel to the x-y plane; and a second magnetoresistance element having a plurality of second shapes coupled in series to result in the second magnetoresistance element having a second serpentine shape parallel to the x-y plane, wherein the plurality of first shapes and the plurality of second shapes are disposed in an interdigitated pattern. A magnetic field sensor can use the above magnetoresistance element structure. Nested magnetoresistance elements and magnetic field sensors are also described.

Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.

Abstract: A method of determining an error condition in a magnetic field sensor can include receiving a first bridge signal, the first bridge signal generated by a first full bridge circuit. The method can also include receiving a second bridge signal, the second bridge signal generated by a second full bridge circuit. The method can also include determining a bridge separation from the first bridge signal and the second bridge signal. The method can also include comparing a function of the bridge separation to a threshold value. The method can also include generating an error signal indicative of the error condition or not indicative of the error condition in response to the comparing.

Abstract: A system includes a ring magnet having magnetic segments and configured to rotate about an axis of rotation, wherein adjacent segments have different magnetic polarities, The system can further include a substrate positioned so that a top surface of the substrate is substantially parallel to the axis of rotation and a center plane passing through the ring magnet and perpendicular to the axis of rotation of the ring magnet intersects the top surface at an intersection line. The system can further include four magnetic field sensing elements supported by the substrate and electrically coupled to form a first bridge circuit, wherein two of the four magnetic field sensing elements are positioned on one side of the intersection line and the other two of the four magnetic field sensing elements are positioned on the other side of the intersection line.

Abstract: A magnetic field sensor responsive to a movement of a target object can include a plurality of magnetoresistance elements arranged in a line and having a span according to y(1?1/x), where y is equal a full spatial period of the target object and where x is equal to a total quantity of magnetoresistance elements in the plurality of magnetoresistance elements. The plurality of magnetic field sensing elements is operable to generate a signal that is substantially not responsive to the movement of the target object but is responsive to stray external magnetic fields.

Abstract: A magnetic field sensor can include four magnetoresistance elements arranged in a bridge, wherein two of the magnetoresistance elements have a response to an external or stray magnetic field that is opposite to a response of the other two magnetoresistance elements.

Abstract: Methods and apparatus for a sensor having a first magnetic field sensing element with first and second segments where the first and second segments are located at positions of opposite magnetic field. The first and second segments are spaced from each other based upon iso-lines of the magnetic field. A processing module can process an output of the magnetic field sensing element.

Abstract: A magnetoresistance element structure disposed parallel to an x-y plane defined by an x-axis and a y-axis orthogonal to the x-axis can include a first magnetoresistance element having a plurality of first shapes coupled in series to result in the first magnetoresistance element having a first serpentine shape parallel to the x-y plane; and a second magnetoresistance element having a plurality of second shapes coupled in series to result in the second magnetoresistance element having a second serpentine shape parallel to the x-y plane, wherein the plurality of first shapes and the plurality of second shapes are disposed in an interdigitated pattern. A magnetic field sensor can use the above magnetoresistance element structure. Nested magnetoresistance elements and magnetic field sensors are also described.