Abstract: A magnetoresistance element assembly has two stacks of material layers with respective reference layers and respective bias layers that have relative magnetic directions that are not perpendicular to each other. Bias layers in the two stacks have bias magnetic directions that oppose each other. Linear range is increased.

Abstract: A magnetoresistance element (e.g. a spin valve) for detecting a changing magnetic field includes a pinning layer, pinned layer adjacent to the pinning layer, a spacer layer adjacent to the pinned layer, and a free layer adjacent to the spacer layer and arranged so that the spacer layer is between the pinned layer and the free layer. The pinned layer has a bias with a bias direction configured to reduce an effect of a static field on the detection of the changing magnetic field.

Abstract: Methods and apparatus for a sensor having a first magnetic field sensing element with first and second segments where the first and second segments are located at positions of opposite magnetic field. The first and second segments are spaced from each other based upon iso-lines of the magnetic field. A processing module can process an output of the magnetic field sensing element.

Abstract: A magnetic field angle sensor is provided having two or more bridge structures of magnetoresistance elements, with each bridge structure configured to measure a projection of a magnetic field along a different axis such that an angle of direction of the magnetic field can be measured with greater accuracy. The angle sensor includes a first bridge structure configured to generate a first sinusoidal signal indicative of the magnetic field along a first axis and a first cosinusoidal signal indicative of the magnetic field along a second axis that is orthogonal with respect to the first axis and a second bridge structure configured to generate a second sinusoidal signal indicative of the magnetic field along a third axis and a second cosinusoidal signal indicative of the magnetic field along a fourth axis that is orthogonal with respect to the third axis, wherein an angle between the first axis and the third axis is a factor of 90°.

Abstract: Methods and apparatus for a sensor system having a first magnetic field sensing element with first and second segments where the first and second segments are located at positions to generate magnetic field bias in opposite directions for reducing sensitivity due to misalignment of the first and second segments. A processing module is configured to receive an output of the magnetic field sensing element.

Abstract: A magnetic field sensor can include a substrate, a first magnetoresistance element disposed over the substrate and including a first maximum response axis and a first bias layer structure configured to generate a first bias magnetic field with a first magnetic direction between ninety degrees and sixty degrees relative to the first maximum response axis. The magnetic field sensor can also include a second magnetoresistance element disposed over the substrate and including a second maximum response axis parallel to the first maximum response axis and a second bias layer structure configured to generate a second bias magnetic field with a second magnetic direction parallel to the first magnetic direction and opposed to the first magnetic direction. The first and second magnetoresistance elements can each have a pair of electrical contacts for coupling to circuits.

Abstract: A current sensor can indirectly measure a sensed current by directly measuring static perturbing AC magnetic fields with magnetoresistance elements, the perturbing magnetic fields generated by perturbing coils. The sensed current can be indirectly measured by modulating or changing sensitivities of the magnetoresistance elements in a way that is directly related to the sensed current.

Abstract: A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

Abstract: A magnetoresistance element disposed upon a substrate can include a stack of layers. The stack of layers can include a first portion including a first bias layer structure for generating a first bias magnetic field with a first bias direction, and a first free layer structure disposed proximate to the first bias layer structure, wherein the first free layer structure is biased by the first bias magnetic field. The stack of layers can also include a second portion including a second bias layer structure for generating a second bias magnetic field with a second bias direction; and a second free layer structure disposed proximate to the second bias layer structure, wherein the second free layer structure is biased by the second bias magnetic field, and wherein the first bias direction and the second bias directions are opposite to each other.

Abstract: A method of determining an error condition in a magnetic field sensor can include receiving a first bridge signal, the first bridge signal generated by a first full bridge circuit. The method can also include receiving a second bridge signal, the second bridge signal generated by a second full bridge circuit. The method can also include determining a bridge separation from the first bridge signal and the second bridge signal. The method can also include comparing a function of the bridge separation to a threshold value. The method can also include generating an error signal indicative of the error condition or not indicative of the error condition in response to the comparing.

Abstract: A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of layers including a first spacer layer having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field. The MR element also has a second stack portion comprising a second plurality of layers, including a second spacer layer having a second thickness to result in the second stack portion having a second sensitivity to the applied magnetic field. The first thickness may be different than the second thickness resulting in the first sensitivity being different than the second sensitivity.

Abstract: A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

Abstract: A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

Abstract: The invention provides a multibit magnetic memory structure comprising a stack of two or more magnetic plaquettes, each of which has at least three distinct magnetic states. The invention provides for a new type of vertical memory where each layer encodes information in two degrees of freedom, which has the potential to increase the theoretical storage capacity by factor 4n. The information is read, through the resonant frequency of the stack or through a combination of the resonant frequency and resistance.

Abstract: A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

Abstract: The invention provides a multibit magnetic memory structure comprising a stack of two or more magnetic plaquettes, each of which has at least three distinct magnetic states. The invention provides for a new type of vertical memory where each layer encodes information in two degrees of freedom, which has the potential to increase the theoretical storage capacity by factor 4n. The information is read, through the resonant frequency of the stack or through a combination of the resonant frequency and resistance.