Patents by Inventor R. Stanley Williams

R. Stanley Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8519372
    Abstract: A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: August 27, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Shih-Yuan Wang, R. Stanley Williams, Alexandre Bratkovski, Gilberto Ribeiro
  • Publication number: 20130217143
    Abstract: A chemical-analysis device integrated with a metallic-nanofinger device for chemical sensing. The chemical-analysis device includes a metallic-nanofinger device, and a platform. The metallic-nanofinger device includes a substrate, and a plurality of nanofingers coupled with the substrate. A nanofinger of the plurality includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger of the plurality of nanofingers are to self-arrange into a close-packed configuration with at least one analyte molecule. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A method for using, and a chemical-analysis apparatus including the chemical-analysis device are also provided.
    Type: Application
    Filed: October 20, 2010
    Publication date: August 22, 2013
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Zhiyong Li, R. Stanley Williams
  • Publication number: 20130207069
    Abstract: A metal-insulator transition switching device includes a first electrode and a second electrode. A channel region which includes a bulk metal-insulator transition material separates the first electrode and the second electrode. A method for forming a metal-insulator transition switching device includes depositing a layer of bulk metal-insulator transition material in between a first electrode and a second electrode to form a channel region and forming a gate electrode operatively connected to the channel region.
    Type: Application
    Filed: October 21, 2010
    Publication date: August 15, 2013
    Inventors: Matthew D. Pickett, Philip J. Kuekes, R. Stanley Williams, Frederick Perner, Wei Wu, Alexandre M. Bratkovski
  • Patent number: 8503217
    Abstract: A two-dimensional array of switching devices comprises a plurality of crossbar tiles. Each crossbar tile has a plurality of row wire segments intersecting a plurality of column wire segments, and a plurality of switching devices each formed at an intersection of a row wire segment and a column wire segment. The array has a plurality of lateral latches disposed in a plane of the switching devices. Each lateral latch is linked to a first wire segment of a first crossbar tile and a second wire segment of a second crossbar tile opposing the first wire segment. The lateral latch is operable to close or open to form or break an electric connection between the first and second wire segments.
    Type: Grant
    Filed: April 30, 2011
    Date of Patent: August 6, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Patent number: 8502198
    Abstract: A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.
    Type: Grant
    Filed: April 28, 2006
    Date of Patent: August 6, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: R. Stanley Williams, Zhiyong Li, Douglas Ohlberg, Philip J. Kuekes, Duncan Stewart
  • Publication number: 20130195721
    Abstract: A metallic-nanofinger device for chemical sensing. The device includes a substrate, and a plurality of nanofingers. A nanofinger includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger are to self-arrange into a close-packed configuration with at least one analyte molecule disposed between at least the metallic cap and a second metallic cap of respective nanofinger and second nanofinger. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A coating encapsulating the metallic cap to respond upon exposure to a liquid, and a chemical-sensing chip including the metallic-nanofinger device are also provided.
    Type: Application
    Filed: October 20, 2010
    Publication date: August 1, 2013
    Inventors: Zhiyong Li, R. Stanley Williams
  • Patent number: 8493890
    Abstract: Transmitting nodes broadcast chirped signals on a wireless network. The transmitting nodes are time-synchronized with each other and location of the transmitting nodes is known. A receiver node detects beat frequencies created by pairs of chirped signals from different pairs of transmitting nodes. Time delay differences between chirped signals in respective beat frequency pairs are determined. The receiver node's location is determined in view of the time delay differences.
    Type: Grant
    Filed: April 13, 2010
    Date of Patent: July 23, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Wei Wu, Marco Florentino, R. Stanley Williams
  • Publication number: 20130175497
    Abstract: A memristor includes a first electrode formed of a first metal, a second electrode formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer is in direct contact with the first electrode and in which at least one conduction channel is configured to be formed in the switching layer from an interaction between the first metal and the second nonmetal material.
    Type: Application
    Filed: September 27, 2010
    Publication date: July 11, 2013
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • Publication number: 20130176766
    Abstract: A stateful negative differential resistance device includes a first conductive electrode and a second conductive electrode. The device also includes a first material with a reversible, nonvolatile resistance that changes based on applied electrical energy and a second material comprising a differential resistance that is negative in a locally active region. The first material and second material are sandwiched between the first conductive electrode and second conductive electrode. A method for using a stateful NDR device includes applying programming energy to the stateful NDR device to set a state of the stateful NDR device to a predetermined state and removing electrical power from the stateful NDR device. Power-up energy is applied to the stateful NDR device such that the stateful NDR device returns to the predetermined state.
    Type: Application
    Filed: January 9, 2012
    Publication date: July 11, 2013
    Inventors: Matthew D. Pickett, Frederick A. Perner, R. Stanley Williams
  • Patent number: 8450711
    Abstract: Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: May 28, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: R. Stanley Williams, Jianhua Yang, Duncan Stewart
  • Patent number: 8447146
    Abstract: A photonic interconnect method avoids high capacitance electric interconnects by using optical signals to communicate data between devices. The method can provide massively parallel information output by mapping logical addresses to frequency bands, so that modulation of a selected frequency band can encode information for a specific location corresponding to the logical address. Wavelength-specific directional couplers, modulators, and detectors, which can be fabricated at defects in a photonic bandgap crystal, can be employed for the photonic interconnect method. The interconnect method can be used for both classical and quantum information processing.
    Type: Grant
    Filed: January 11, 2008
    Date of Patent: May 21, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Raymond G. Beausoleil, Philip J. Kuekes, William J. Munro, Timothy P. Spiller, R. Stanley Williams, Sean D. Barrett
  • Patent number: 8436330
    Abstract: An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least two dopants are present in a spatially varying region of the active region prior to device actuation. The at least two dopants have opposite conductivity types and different mobilities.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: May 7, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Theodore I Kamins, R Stanley Williams
  • Patent number: 8437072
    Abstract: An addressable nano-scale mechanical actuator is formed at the intersection of two nanowires. The actuator has an active region disposed between the two nanowires, which form the electrodes of the actuator. The active region contains an electrolytically decomposable material. When an activation voltage is applied to the electrodes, the material releases a gas that forms a bubble at one electrode, causing a bulging of a top surface of the actuator. The bulging may be used, via mechanical coupling, to provide mechanical actuation on a nanometer scale. The nanowires may be arranged in a two-dimensional array to provide an array of individually addressable actuators.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: May 7, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, R. Stanley Williams, William Tong
  • Publication number: 20130106480
    Abstract: A metal-insulator transition (MIT) latch includes a first electrode spaced apart from a second electrode and an MIT material disposed between said first and second electrodes. The MIT material comprises a negative differential resistance (NDR) characteristic that exhibits a discontinuous resistance change at a threshold voltage or threshold current. Either the first or second electrode is electrically connected to an electrical bias source regulated to set a resistance phase of the MIT material.
    Type: Application
    Filed: January 31, 2012
    Publication date: May 2, 2013
    Inventors: Gilberto Medeiros Ribeiro, Matthew D. Pickett, R. Stanley Williams
  • Publication number: 20130106462
    Abstract: A field-programmable analog array (FPAA) includes a digital signal routing network, an analog signal routing network, switch elements to interconnect the digital signal routing network with the analog signal routing network, and a configurable analog block (CAB) connected to the analog signal routing network and having a programmable resistor array. The switch elements are implemented via digital memristors, the programmable resistor array is implemented via analog memristors, and/or antifuses within one or more of the digital signal routing network and the analog signal routing network are implemented via digital memristors.
    Type: Application
    Filed: October 26, 2011
    Publication date: May 2, 2013
    Inventors: Jianhua Yang, Muhammad Shakeel Qureshi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Publication number: 20130099872
    Abstract: Chaotic oscillator-based random number generation is described. In an example, a circuit includes a negative differential resistance (NDR) device to receive an alternating current (AC) bias. The circuit further includes a capacitance in parallel with the NDR device, the capacitance having a value such that, in response to a direct current (DC) bias applied to the NDR device and the capacitance, a voltage across the capacitance oscillates with a chaotic period. The circuit further includes a random number generator to generate random numbers using samples of the voltage across the capacitance.
    Type: Application
    Filed: October 25, 2011
    Publication date: April 25, 2013
    Inventors: Matthew D. Pickett, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Publication number: 20130099187
    Abstract: A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.
    Type: Application
    Filed: October 25, 2011
    Publication date: April 25, 2013
    Inventors: Matthew D. Pickett, R. Stanley Williams, Gilberto M. Ribeiro, Warren Jackson
  • Patent number: 8415652
    Abstract: A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: April 9, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Gilberto Ribeiro, R. Stanley Williams
  • Patent number: 8395768
    Abstract: A scattering spectroscopy apparatus, system and method employ guided mode resonance (GMR) and a GMR grating. The apparatus includes a GMR grating having a subwavelength grating, and an optical detector configured to receive a portion of a scattered signal produced by an interaction between an excitation signal and an analyte associated with a surface of the GMR grating. A propagation direction of the received portion of the scattered signal is substantially different from a propagation direction of a GMR-coupled portion of the excitation signal within the GMR grating. The system includes the apparatus and an optical source. The method includes exciting a GMR in a GMR grating, interacting a GMR-coupled portion of the excitation signal with an analyte to produce a scattered signal and detecting a portion of the scattered signal.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: March 12, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhiyong Li, David A. Fattal, Jingjing Li, R. Stanley Williams
  • Patent number: 8390805
    Abstract: A surface enhanced Raman spectroscopy system includes a surface enhanced Raman spectroscopy substrate and a laser source configured to emit light within a spectrum of wavelengths toward a predetermined species on or near the surface enhanced Raman spectroscopy substrate. The system further includes a set of filters positioned to be in optical communication with light scattered after the laser light interacts with the predetermined species. Each of the filters in the set is respectively configured to pass scattered light within a different predetermined narrow band of wavelengths. The system also includes a plurality of photodetectors, where each photodetector is positioned adjacent to a respective one of the filters in the set and is configured to output a signal if the scattered light passes through the respective one of the filters. The set of filters is targeted for detection of characteristic peaks of the predetermined species.
    Type: Grant
    Filed: July 29, 2010
    Date of Patent: March 5, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Huei Pei Kuo, Zhiyong Li, R. Stanley Williams