Abstract: A photonic interconnect method avoids high capacitance electric interconnects by using optical signals to communicate data between devices. The method can provide massively parallel information output by mapping logical addresses to frequency bands, so that modulation of a selected frequency band can encode information for a specific location corresponding to the logical address. Wavelength-specific directional couplers, modulators, and detectors, which can be fabricated at defects in a photonic bandgap crystal, can be employed for the photonic interconnect method. The interconnect method can be used for both classical and quantum information processing.

Abstract: A photonic interconnect system avoids high capacitance electric interconnects by using optical signals to communicate data between devices. The system can provide massively parallel information output by mapping logical addresses to frequency bands, so that modulation of a selected frequency band can encode information for a specific location corresponding to the logical address. The system comprises a first device containing a plurality of locations that are separately accessible and a plurality of optical decoders respectively associated with the locations; a second device that generates a logical address identifying a selected one of the locations in the first device; a converter capable of activating each of a plurality of components of an optical signal; and an optical path from the converter to each of the locations. The system can be used for both classical and quantum information processing.

Abstract: A photonic interconnect system avoids high capacitance electric interconnects by using optical signals to communicate data between devices. The system can provide massively parallel information output by mapping logical addresses to frequency bands, so that modulation of a selected frequency band can encode information for a specific location corresponding to the logical address. Wavelength-specific directional couplers, modulators, and detectors for the photonic interconnect system can be efficiently fabricated at defects in a photonic bandgap crystal. The interconnect system can be used for both classical and quantum information processing.

Abstract: A multi-terminal electrically actuated switch comprises a source electrode, a drain electrode, and an active region physically connected to both electrodes. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). A gate electrode is physically connected to the source/sink region. Methods of operating the switch are also provided.

Abstract: Various embodiments of the present invention are directed to crossbar array designs that interfaces wires to address wires, despite misalignments between electrical components and wires. In one embodiment, a nanoscale device may be composed of a first layer of two or more wires and a second layer of two or more address wires that overlays the first layer. The nanoscale device may also include an intermediate layer positioned between the first layer and the second layer. Two or more redundant electrical component patterns may be fabricated within the intermediate layer so that one or more of the electrical component patterns is aligned with the first and second layers.

Abstract: A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.

Abstract: Packaged NERS-active structures are disclosed that include a NERS substrate having a NERS-active structure thereon, and a packaging substrate over the NERS substrate having an opening therethrough, the opening in alignment with the NERS-active structure. A membrane may cover the opening in the packaging substrate. In order to perform nanoenhanced Raman spectroscopy, the membrane may be removed, and an analyte placed on the NERS substrate adjacent the NERS-active structure. The membrane may be replaced with another membrane after the analyte has been placed on the substrate. The membrane may maintain the pristine state of the substrate before it is deployed, and the replacement membrane may preserve the substrate and analyte for archival purposes. Also disclosed are methods for performing NERS with packaged NERS-active structures.

Abstract: Raman systems include a radiation source, a radiation detector, and a Raman device or signal-enhancing structure. Raman devices include a tunable resonant cavity and a Raman signal-enhancing structure coupled to the cavity. The cavity includes a first reflective member, a second reflective member, and an electro-optic material disposed between the reflective members. The electro-optic material exhibits a refractive index that varies in response to an applied electrical field. Raman signal-enhancing structures include a substantially planar layer of Raman signal-enhancing material having a major surface, a support structure extending from the major surface, and a substantially planar member comprising a Raman signal-enhancing material disposed on an end of the support structure opposite the layer of Raman signal-enhancing material. The support structure separates at least a portion of the planar member from the layer of Raman signal-enhancing material by a selected distance of less than about fifty nanometers.

Abstract: A method of forming an electrical interconnect, which includes a first electrode, an interlayer of a programmable material disposed over at least a portion of the first electrode, and a second electrode disposed over the programmable material at a non-zero angle relative to the first electrode. The interlayer includes a modified region having differing electrical properties than the rest of the interlayer, sandwiched at the junction of the first electrode and the second electrode. The interlayer may be exposed to a focused beam to form the modified region.

Abstract: Techniques for rich color image processing are disclosed. The techniques include using an array of tunable optical filter elements to define pixels of an image. The tunable optical filter elements are tuned over a range of optical frequencies to control the color filtering of the individual pixels. Exemplary embodiments for image capture and projection are illustrated.

Abstract: A metamaterial includes a non-linear organic material and a plurality of metallic resonators embedded substantially within the non-linear organic material.

Abstract: Embodiments of the present invention are directed to mixed-scale electronic interfaces, included in integrated circuits and other electronic devices, that provide for dense electrical interconnection between microscale features of a predominantly microscale or submicroscale layer and nanoscale features of a predominantly nanoscale layer. The predominantly nanoscale layer, in one embodiment of the present invention, comprises a tessellated pattern of submicroscale or microscale pads densely interconnected by nanowire junctions between sets of parallel, closely spaced nanowire bundles. The predominantly submicroscale or microscale layer includes pins positioned complementarily to the submicroscale or microscale pads in the predominantly nanoscale layer. Pins can be configured according to any periodic tiling of the microscale layer.

Abstract: Embodiments of the present invention are directed to mixed-scale electronic interfaces, included in integrated circuits and other electronic devices, that provide for dense electrical interconnection between microscale features of a predominantly microscale or submicroscale layer and nanoscale features of a predominantly nanoscale layer. The predominantly nanoscale layer, in one embodiment of the present invention, comprises a tessellated pattern of submicroscale or microscale pads densely interconnected by nanowire junctions between sets of parallel, closely spaced nanowire bundles. The predominantly submicroscale or microscale layer includes pins positioned complementarily to the submicroscale or microscale pads in the predominantly nanoscale layer.

Abstract: A sensor includes traps that are adjacent to a waveguide and capable of holding a contaminant for an interaction with an evanescent field surrounding the waveguide. When held in a trap, a particle of the contaminant, which may be an atom, a molecule, a virus, or a microbe, scatters light from the waveguide, and the scattered light can be measured to detect the presence or concentration of the contaminant. Holding of the particles permits sensing of the contaminant in a gas where movement of the particles might otherwise be too fast to permit measurement of the interaction with the evanescent field. The waveguide, a lighting system for the waveguide, a photosensor, and a communications interface can all be fabricated on a semiconductor die to permit fabrication of an autonomous nanosensor capable of suspension in the air or a gas being sensed.

Abstract: A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.

Abstract: A multi-tiered network for gathering detected condition information includes a first tier having first tier nodes and a second tier having a second tier node. The second tier node is operable to receive detected condition information from at least one of the first tier nodes in a substantially autonomous manner. In addition, the second tier node is operable to at least one of store, process, and transmit the detected condition information. The network also includes a third tier having a third tier node configured to receive the detected condition information and to at least one of store and process the detected condition information.

Abstract: Nanowire growth in situ on a planar surface, which is one of a crystalline surface having any crystal orientation, a polycrystalline surface and a non-crystalline surface, is controlled by guiding catalyzed growth of the nanowire from the planar surface in a nano-throughhole of a patterned layer formed on the planar surface, such that the nanowire grows in situ perpendicular to the planar surface. An electronic device includes first and second regions of electronic circuitry vertically spaced by the patterned layer. The nano-throughhole of the patterned layer extends perpendicularly between the regions. The first region has the planar surface. The device further includes a nanowire extending perpendicular from a catalyst location on the planar surface of the first region in the nano-throughhole. The nanowire forms a component of a nano-scale circuit that connects the regions.

Abstract: Various embodiments of the present invention are directed to crossbar array designs that interfaces wires to address wires, despite misalignments between electrical components and wires. In one embodiment, a nanoscale device may be composed of a first layer of two or more wires and a second layer of two or more address wires that overlays the first layer. The nanoscale device may also include an intermediate layer positioned between the first layer and the second layer. Two or more redundant electrical component patterns may be fabricated within the intermediate layer so that one or more of the electrical component patterns is aligned with the first and second layers.

Abstract: In accordance with the present invention, a molecular device is provided that can act as a finite state machine, such as a logic device or a memory device. The molecular device includes operating molecules having two or more rotors. Each rotor has an electric dipole moment and multiple discrete rotor configurational states. A rotor can be any suitable and effective group that has an electric dipole moment and multiple discrete rotor configurational states. An individual rotor configurational state can be substantially or completely independent of the rotor configurational states of other rotors. The rotor configurational states can be binary. The molecular configurational state of a multi-stable molecule of a device can be ascertained by measuring conductance.

Abstract: A NERS-active structure includes a deformable, active nanoparticle support structure for supporting a first nanoparticle and a second nanoparticle that is disposed proximate the first nanoparticle. The nanoparticles each comprise a NERS-active material. The deformable, active nanoparticle support structure is configured to vary the distance between the first nanoparticle and the second nanoparticle while performing NERS. Various active nanoparticle support structures are disclosed. A NERS system includes such a NERS-active structure, a radiation source for generating radiation scatterable by an analyte located proximate the NERS-active structure, and a radiation detector for detecting Raman scattered radiation scattered by the analyte.