Patents by Inventor Rae Man Park

Rae Man Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8466002
    Abstract: Provided are methods of fabricating a solar cell and a vacuum deposition apparatus used therefor. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window electrode layer on the buffer layer. The forming of the buffer layer may include a deposition step of forming a cationic metal material and a diffusion step of diffusing an anionic non-metal material into the cationic metal material.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: June 18, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventor: Rae-Man Park
  • Publication number: 20130133735
    Abstract: Provided are a solar cell module and a method of manufacturing the same. The solar cell module including: a substrate; a bottom electrode layer discontinuously formed on the substrate; a light absorbing layer formed on the bottom electrode layer and including a first trench that exposes the bottom electrode layer; and a transparent electrode layer extending from the top of the light absorbing layer to the bottom electrode layer at the bottom of the first trench, and including a first oxide layer, a metal layer, and a second oxide layer, all of which are staked on the light absorbing layer and the bottom electrode layer.
    Type: Application
    Filed: September 13, 2012
    Publication date: May 30, 2013
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Woo-Seok CHEONG, Rae-Man Park
  • Publication number: 20130137208
    Abstract: Provided is a method of manufacturing a solar cell module The method includes: forming a bottom electrode layer on a substrate; forming a light absorbing layer on the bottom electrode layer and the substrate; forming a first trench that exposes the bottom electrode layer by patterning the light absorbing layer; and forming a window electrode layer that extends from the top of the light absorbing layer to the bottom of the bottom of the first trench, wherein the window electrode layer is formed through an ionized physical vapor deposition method.
    Type: Application
    Filed: September 14, 2012
    Publication date: May 30, 2013
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Woo-Seok CHEONG, Rae-Man Park
  • Patent number: 8414974
    Abstract: Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: April 9, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Rae-Man Park, Sang-Hyeob Kim, Sunglyul Maeng, Jonghyurk Park
  • Publication number: 20120315721
    Abstract: Methods of manufacturing a solar cell module are provided. The method may include forming lower electrodes on a substrate, forming a light absorption layer on the lower electrodes and the substrate, patterning the light absorption layer to form a trench exposing the lower electrodes, and forming window electrodes using a conductive film. The conductive film extends from a top surface of the light absorption layer to a bottom of the trench along one-sidewall of the trench and is divided at another-sidewall of the trench.
    Type: Application
    Filed: May 18, 2012
    Publication date: December 13, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventor: Rae-Man PARK
  • Patent number: 8258003
    Abstract: Provided is a manufacturing method of a compound semiconductor solar cell. The method includes; preparing a substrate on which a back electrode is disposed, and sputtering a metal target to form a copper indium gallium selenium (CIGS) thin film on the back electrode under an indium (In) deposition gas atmosphere.
    Type: Grant
    Filed: February 8, 2011
    Date of Patent: September 4, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventor: Rae-Man Park
  • Publication number: 20120220073
    Abstract: Provided are methods of fabricating a solar cell and a vacuum deposition apparatus used therefor. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window electrode layer on the buffer layer. The forming of the buffer layer may include a deposition step of forming a cationic metal material and a diffusion step of diffusing an anionic non-metal material into the cationic metal material.
    Type: Application
    Filed: January 12, 2012
    Publication date: August 30, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventor: Rae-Man PARK
  • Publication number: 20120094428
    Abstract: Provided is a manufacturing method of a compound semiconductor solar cell. The method includes; preparing a substrate on which a back electrode is disposed, and sputtering a metal target to form a copper indium gallium selenium (CIGS) thin film on the back electrode under an indium (In) deposition gas atmosphere.
    Type: Application
    Filed: February 8, 2011
    Publication date: April 19, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventor: Rae-Man PARK
  • Patent number: 8087151
    Abstract: A gas sensor includes zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands on the zinc oxide nano-structures, a solution of metal components of a metal material is coated on the surface of each zinc oxide nano-structure.
    Type: Grant
    Filed: April 3, 2007
    Date of Patent: January 3, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Rae-Man Park, Sang-Hyeob Kim, Jonghyurk Park, Sunglyul Maeng
  • Patent number: 7985666
    Abstract: Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: July 26, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Rae-Man Park, Sang-Hyeob Kim, Jonghyurk Park, Sunglyul Maeng
  • Publication number: 20110135827
    Abstract: Provided is CNTs on which TiO2 is uniformly coated. The method includes: functionalizing CNTs with hydrophilic functional groups; mixing the CNTs functionalized with hydrophilic functional groups in a solution that contains with TiO2 precursors; refining TiO2 precursor-coated CNTs from the solution in which the CNTs and the TiO2 precursors are mixed; and heat treating the refined TiO2-coated CNTs. The TiO2-coated CNTs formed in this manner simultaneously retain the characteristics of CNTs and TiO2 nanowires, and thus, can be applied to solar cells, field emission display devices, gas sensors, or optical catalysts.
    Type: Application
    Filed: March 19, 2008
    Publication date: June 9, 2011
    Applicant: Electronic and Telecommunications Research Institute
    Inventors: Ki-Chul Kim, Sung-Lyul Maeng, Sang-Hyeob Kim, Rae-Man Park, Jong-Hyurk Park, Young-Jin Choi, Dae-Joon Kang
  • Publication number: 20110043758
    Abstract: There is provided an apparatus for irradiating a beam at a user's eye gaze point and an operation method thereof. The apparatus includes an eye gaze point detecting part analyzing a movement of a user's pupils and detecting the user's eye gaze point, and a beam irradiation part irradiating a beam at the user's eye gaze point detected by the eye gaze point detecting part. The apparatus detects the user's current eye gaze point and irradiates the beam at the user's detected eye gaze point, thereby allowing for the performance of desired control with greater accuracy.
    Type: Application
    Filed: April 19, 2010
    Publication date: February 24, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chang Geun AHN, Rae Man Park, Gun Yong Sung, Seon Hee Park
  • Publication number: 20110017289
    Abstract: Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.
    Type: Application
    Filed: April 29, 2010
    Publication date: January 27, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Rae-Man PARK, Chull Won Ju, Dae-Hyung Cho, Yong-Duck Chung, Sung-Bum Bae, Won Seok Han, Kyu-Seok Lee, Je Ha Kim
  • Publication number: 20100304501
    Abstract: Disclosed is a bio lab-on-a-chip. The bio lab-on-a-chip is provided on a piezoelectric thin film on a substrate, and includes a sensing unit to sense a bio signal and a fluidic control unit which controls a transfer of a microfluid adjacent to the sensing unit. Provided is also a method of fabricating the bio lab-on-a-chip. The method includes the steps of forming a piezoelectric thin film, forming a sensing unit to sense a bio signal of a microfluid on the piezoelectric thin film, and forming a fluidic control unit located adjacent to the sensing unit.
    Type: Application
    Filed: November 9, 2007
    Publication date: December 2, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICAATIONS RESEARCH INSTI
    Inventors: Dae Sik Lee, Rae Man Park, Sung Lyul Maeng, Moon Youn Jung, Seon Hee Park, Hyun Chul Yoon
  • Publication number: 20100117058
    Abstract: Provided is a multi-structure nanowire in which silicon nanowires are formed at both ends of a compound semi-conductor nanorod, and a method of manufacturing the multi-structure nanowire. The method includes providing a compound semiconductor nanorod; forming metal catalyst tips on both ends of the compound semiconductor nanorod; and growing silicon nanowires on both ends of the compound semiconductor nanorod where the metal catalyst tips are formed.
    Type: Application
    Filed: February 26, 2008
    Publication date: May 13, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jong-Hyurk Park, Sung-Lyul Maeng, Rae-Man Park, Andrea C. Ferrari, Andrea Fasoli, Alan Colli
  • Publication number: 20100012919
    Abstract: Provided are a gas sensor using a plurality of zinc oxide nano-structures on which metal islands are formed, and a method of fabricating the same. The gas sensor comprises zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode.
    Type: Application
    Filed: April 3, 2007
    Publication date: January 21, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Rae-Man Park, Sang-Hyeob Kim, Jonghyurk Park, Sunglyul Maeng
  • Publication number: 20090325365
    Abstract: Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.
    Type: Application
    Filed: December 8, 2006
    Publication date: December 31, 2009
    Applicant: Electronics AND Telecommunications Research Institute
    Inventors: Rae-Man Park, Sang-Hyeob Kim, Jonghyurk Park, Sunglyul Maeng
  • Patent number: 7608853
    Abstract: Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.
    Type: Grant
    Filed: June 27, 2008
    Date of Patent: October 27, 2009
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chul Huh, Rae-Man Park, Jae-Heon Shin, Kyung-Hyun Kim, Tae-Youb Kim, Kwan-Sik Cho, Gun-Yong Sung
  • Publication number: 20090123649
    Abstract: Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.
    Type: Application
    Filed: December 8, 2006
    Publication date: May 14, 2009
    Applicant: TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Rae-Man Park, Kim Sang-Hyoob, Sunglyul Maeng, Jonghyurk Park
  • Publication number: 20090101928
    Abstract: Provided are a light emitting diode and a method of fabricating the same. In an inorganic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on an upper doping layer which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the upper doping layer and the transparent electrode. In an organic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on a plastic substrate which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the substrate and the transparent electrode.
    Type: Application
    Filed: December 7, 2005
    Publication date: April 23, 2009
    Inventors: Kyung Hyun Kim, Rae Man Park, Tae Youb Kim, Gun Yong Sung