Patents by Inventor Rae Man Park
Rae Man Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8466002Abstract: Provided are methods of fabricating a solar cell and a vacuum deposition apparatus used therefor. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window electrode layer on the buffer layer. The forming of the buffer layer may include a deposition step of forming a cationic metal material and a diffusion step of diffusing an anionic non-metal material into the cationic metal material.Type: GrantFiled: January 12, 2012Date of Patent: June 18, 2013Assignee: Electronics and Telecommunications Research InstituteInventor: Rae-Man Park
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Publication number: 20130133735Abstract: Provided are a solar cell module and a method of manufacturing the same. The solar cell module including: a substrate; a bottom electrode layer discontinuously formed on the substrate; a light absorbing layer formed on the bottom electrode layer and including a first trench that exposes the bottom electrode layer; and a transparent electrode layer extending from the top of the light absorbing layer to the bottom electrode layer at the bottom of the first trench, and including a first oxide layer, a metal layer, and a second oxide layer, all of which are staked on the light absorbing layer and the bottom electrode layer.Type: ApplicationFiled: September 13, 2012Publication date: May 30, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Woo-Seok CHEONG, Rae-Man Park
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Publication number: 20130137208Abstract: Provided is a method of manufacturing a solar cell module The method includes: forming a bottom electrode layer on a substrate; forming a light absorbing layer on the bottom electrode layer and the substrate; forming a first trench that exposes the bottom electrode layer by patterning the light absorbing layer; and forming a window electrode layer that extends from the top of the light absorbing layer to the bottom of the bottom of the first trench, wherein the window electrode layer is formed through an ionized physical vapor deposition method.Type: ApplicationFiled: September 14, 2012Publication date: May 30, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Woo-Seok CHEONG, Rae-Man Park
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Patent number: 8414974Abstract: Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.Type: GrantFiled: December 8, 2006Date of Patent: April 9, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Rae-Man Park, Sang-Hyeob Kim, Sunglyul Maeng, Jonghyurk Park
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Publication number: 20120315721Abstract: Methods of manufacturing a solar cell module are provided. The method may include forming lower electrodes on a substrate, forming a light absorption layer on the lower electrodes and the substrate, patterning the light absorption layer to form a trench exposing the lower electrodes, and forming window electrodes using a conductive film. The conductive film extends from a top surface of the light absorption layer to a bottom of the trench along one-sidewall of the trench and is divided at another-sidewall of the trench.Type: ApplicationFiled: May 18, 2012Publication date: December 13, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventor: Rae-Man PARK
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Patent number: 8258003Abstract: Provided is a manufacturing method of a compound semiconductor solar cell. The method includes; preparing a substrate on which a back electrode is disposed, and sputtering a metal target to form a copper indium gallium selenium (CIGS) thin film on the back electrode under an indium (In) deposition gas atmosphere.Type: GrantFiled: February 8, 2011Date of Patent: September 4, 2012Assignee: Electronics and Telecommunications Research InstituteInventor: Rae-Man Park
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Publication number: 20120220073Abstract: Provided are methods of fabricating a solar cell and a vacuum deposition apparatus used therefor. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window electrode layer on the buffer layer. The forming of the buffer layer may include a deposition step of forming a cationic metal material and a diffusion step of diffusing an anionic non-metal material into the cationic metal material.Type: ApplicationFiled: January 12, 2012Publication date: August 30, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventor: Rae-Man PARK
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Publication number: 20120094428Abstract: Provided is a manufacturing method of a compound semiconductor solar cell. The method includes; preparing a substrate on which a back electrode is disposed, and sputtering a metal target to form a copper indium gallium selenium (CIGS) thin film on the back electrode under an indium (In) deposition gas atmosphere.Type: ApplicationFiled: February 8, 2011Publication date: April 19, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventor: Rae-Man PARK
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Patent number: 8087151Abstract: A gas sensor includes zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands on the zinc oxide nano-structures, a solution of metal components of a metal material is coated on the surface of each zinc oxide nano-structure.Type: GrantFiled: April 3, 2007Date of Patent: January 3, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Rae-Man Park, Sang-Hyeob Kim, Jonghyurk Park, Sunglyul Maeng
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Patent number: 7985666Abstract: Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.Type: GrantFiled: December 8, 2006Date of Patent: July 26, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Rae-Man Park, Sang-Hyeob Kim, Jonghyurk Park, Sunglyul Maeng
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Publication number: 20110135827Abstract: Provided is CNTs on which TiO2 is uniformly coated. The method includes: functionalizing CNTs with hydrophilic functional groups; mixing the CNTs functionalized with hydrophilic functional groups in a solution that contains with TiO2 precursors; refining TiO2 precursor-coated CNTs from the solution in which the CNTs and the TiO2 precursors are mixed; and heat treating the refined TiO2-coated CNTs. The TiO2-coated CNTs formed in this manner simultaneously retain the characteristics of CNTs and TiO2 nanowires, and thus, can be applied to solar cells, field emission display devices, gas sensors, or optical catalysts.Type: ApplicationFiled: March 19, 2008Publication date: June 9, 2011Applicant: Electronic and Telecommunications Research InstituteInventors: Ki-Chul Kim, Sung-Lyul Maeng, Sang-Hyeob Kim, Rae-Man Park, Jong-Hyurk Park, Young-Jin Choi, Dae-Joon Kang
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Publication number: 20110043758Abstract: There is provided an apparatus for irradiating a beam at a user's eye gaze point and an operation method thereof. The apparatus includes an eye gaze point detecting part analyzing a movement of a user's pupils and detecting the user's eye gaze point, and a beam irradiation part irradiating a beam at the user's eye gaze point detected by the eye gaze point detecting part. The apparatus detects the user's current eye gaze point and irradiates the beam at the user's detected eye gaze point, thereby allowing for the performance of desired control with greater accuracy.Type: ApplicationFiled: April 19, 2010Publication date: February 24, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun AHN, Rae Man Park, Gun Yong Sung, Seon Hee Park
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Publication number: 20110017289Abstract: Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.Type: ApplicationFiled: April 29, 2010Publication date: January 27, 2011Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Rae-Man PARK, Chull Won Ju, Dae-Hyung Cho, Yong-Duck Chung, Sung-Bum Bae, Won Seok Han, Kyu-Seok Lee, Je Ha Kim
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Publication number: 20100304501Abstract: Disclosed is a bio lab-on-a-chip. The bio lab-on-a-chip is provided on a piezoelectric thin film on a substrate, and includes a sensing unit to sense a bio signal and a fluidic control unit which controls a transfer of a microfluid adjacent to the sensing unit. Provided is also a method of fabricating the bio lab-on-a-chip. The method includes the steps of forming a piezoelectric thin film, forming a sensing unit to sense a bio signal of a microfluid on the piezoelectric thin film, and forming a fluidic control unit located adjacent to the sensing unit.Type: ApplicationFiled: November 9, 2007Publication date: December 2, 2010Applicant: ELECTRONICS AND TELECOMMUNICAATIONS RESEARCH INSTIInventors: Dae Sik Lee, Rae Man Park, Sung Lyul Maeng, Moon Youn Jung, Seon Hee Park, Hyun Chul Yoon
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Publication number: 20100117058Abstract: Provided is a multi-structure nanowire in which silicon nanowires are formed at both ends of a compound semi-conductor nanorod, and a method of manufacturing the multi-structure nanowire. The method includes providing a compound semiconductor nanorod; forming metal catalyst tips on both ends of the compound semiconductor nanorod; and growing silicon nanowires on both ends of the compound semiconductor nanorod where the metal catalyst tips are formed.Type: ApplicationFiled: February 26, 2008Publication date: May 13, 2010Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jong-Hyurk Park, Sung-Lyul Maeng, Rae-Man Park, Andrea C. Ferrari, Andrea Fasoli, Alan Colli
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Publication number: 20100012919Abstract: Provided are a gas sensor using a plurality of zinc oxide nano-structures on which metal islands are formed, and a method of fabricating the same. The gas sensor comprises zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode.Type: ApplicationFiled: April 3, 2007Publication date: January 21, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Rae-Man Park, Sang-Hyeob Kim, Jonghyurk Park, Sunglyul Maeng
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Publication number: 20090325365Abstract: Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.Type: ApplicationFiled: December 8, 2006Publication date: December 31, 2009Applicant: Electronics AND Telecommunications Research InstituteInventors: Rae-Man Park, Sang-Hyeob Kim, Jonghyurk Park, Sunglyul Maeng
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Patent number: 7608853Abstract: Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.Type: GrantFiled: June 27, 2008Date of Patent: October 27, 2009Assignee: Electronics and Telecommunications Research InstituteInventors: Chul Huh, Rae-Man Park, Jae-Heon Shin, Kyung-Hyun Kim, Tae-Youb Kim, Kwan-Sik Cho, Gun-Yong Sung
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Publication number: 20090123649Abstract: Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.Type: ApplicationFiled: December 8, 2006Publication date: May 14, 2009Applicant: TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Rae-Man Park, Kim Sang-Hyoob, Sunglyul Maeng, Jonghyurk Park
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Publication number: 20090101928Abstract: Provided are a light emitting diode and a method of fabricating the same. In an inorganic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on an upper doping layer which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the upper doping layer and the transparent electrode. In an organic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on a plastic substrate which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the substrate and the transparent electrode.Type: ApplicationFiled: December 7, 2005Publication date: April 23, 2009Inventors: Kyung Hyun Kim, Rae Man Park, Tae Youb Kim, Gun Yong Sung