Abstract: Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that comprises a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.

Abstract: Disclosed is a method for manufacturing a high conductivity p-type GaN-based thin film superior in electrical and optical properties by use of nitridation and RTA (rapid thermal annealing) in combination. A GaN-based epitaxial layer is grown to a desired thickness while being doped with Mg dopant with a carrier gas of hydrogen by use of a MOCVD process. The film thus obtained is subjected to nitridation using nitrogen plasma and RTA in combination. The p-type GaN-based thin film exhibits high hole concentration as well as low resistivity, so that it can be used where high electrical, optical, thermal and structural properties are needed. The method finds application in the fabrication of blue/white LEDs, laser diodes and other electronic devices.