Patents by Inventor Rafael I. Aldaz
Rafael I. Aldaz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220224083Abstract: Optical devices and methods of manufacturing and operating such optical devices. In an embodiment, an optical device includes a substrate, a multi-layer structure having a first surface in contact with a first surface of the substrate, a first mirror disposed over a second surface of the multi-layer structure, a second mirror disposed over a second surface of the substrate, an intermediate mirror within the multi-layer structure, and an optical gain structure within the multi-layer structure. The device may include a first optically resonant cavity within the multi-layer structure, bounded by the first mirror and the intermediate mirror, where the first optically resonant cavity includes the optical gain structure. The device may further include a second optically resonant cavity, bounded by the first and second mirrors, where the second optically resonant cavity includes the first optically resonant cavity, the second optically reflective layer, and the substrate.Type: ApplicationFiled: March 28, 2022Publication date: July 14, 2022Inventors: Aurelien DAVID, Rafael I. Aldaz
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Patent number: 11133652Abstract: Optical devices and methods of manufacturing and operating such optical devices. In an embodiment, an optical device includes a substrate, a multi-layer structure having a first surface in contact with a first surface of the substrate, a first mirror disposed over a second surface of the multi-layer structure, a second mirror disposed over a second surface of the substrate, an intermediate mirror within the multi-layer structure, and an optical gain structure within the multi-layer structure. The device may include a first optically resonant cavity within the multi-layer structure, bounded by the first mirror and the intermediate mirror, where the first optically resonant cavity includes the optical gain structure. The device may further include a second optically resonant cavity, bounded by the first and second mirrors, where the second optically resonant cavity includes the first optically resonant cavity, the second optically reflective layer, and the substrate.Type: GrantFiled: July 31, 2020Date of Patent: September 28, 2021Inventors: Aurelien David, Rafael I. Aldaz
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Publication number: 20200366067Abstract: Optical devices and methods of manufacturing and operating such optical devices. In an embodiment, an optical device includes a substrate, a multi-layer structure having a first surface in contact with a first surface of the substrate, a first mirror disposed over a second surface of the multi-layer structure, a second mirror disposed over a second surface of the substrate, an intermediate mirror within the multi-layer structure, and an optical gain structure within the multi-layer structure. The device may include a first optically resonant cavity within the multi-layer structure, bounded by the first mirror and the intermediate mirror, where the first optically resonant cavity includes the optical gain structure. The device may further include a second optically resonant cavity, bounded by the first and second mirrors, where the second optically resonant cavity includes the first optically resonant cavity, the second optically reflective layer, and the substrate.Type: ApplicationFiled: July 31, 2020Publication date: November 19, 2020Inventors: Aurelien DAVID, Rafael I. Aldaz
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Publication number: 20200313049Abstract: In one embodiment, the LED package comprises: (a) a submount comprising a substrate, at least one electrical interface, and a non-conductive reflective material disposed over substantially all of submount except for the at least one electrical interface; and (b) an LED chip having sides and at least one contact, the LED chip being flip-chip mounted to the submount such that the at least one contact is electrically connected to the at least one electrical interface, the LED chip covering a substantial portion of the at least one electrical interface, substantially all of the chip extending above the reflective material.Type: ApplicationFiled: June 21, 2017Publication date: October 1, 2020Inventors: Kevin HUANG, Aurelien J.F. DAVID, Stefan EBERLE, Rohit MODI, Scott WEST, Michael J. CICH, Rafael I. ALDAZ, Michael D. CRAVEN
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Patent number: 9905730Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: GrantFiled: March 7, 2014Date of Patent: February 27, 2018Assignee: Lumileds LLCInventors: Patrick N. Grillot, Rafael I. Aldaz, Deborah L. Colbentz, Anneli Munkholm, Hanmin Zhao
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Publication number: 20140183595Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: ApplicationFiled: March 7, 2014Publication date: July 3, 2014Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Patrick N. GRILLOT, Rafael I. ALDAZ, Deborah L. COLBENTZ, Anneli MUNKHOLM, Hanmin ZHAO
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Patent number: 8692286Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: GrantFiled: December 14, 2007Date of Patent: April 8, 2014Assignee: Philips Lumileds Lighing Company LLCInventors: Patrick N. Grillot, Rafael I. Aldaz, Deborah L. Coblentz, Anneli Munkholm, Hanmin Zhao
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Patent number: 8679869Abstract: An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to a mount via the contacts. A growth substrate is removed from the semiconductor structure and a thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 ?m some embodiments, less than 10 ?m in some embodiments. The top side of the semiconductor structure may be textured.Type: GrantFiled: March 19, 2012Date of Patent: March 25, 2014Assignee: Philips Lumileds Lighting Company, LLCInventors: Rafael I. Aldaz, John E. Epler, Patrick N. Grillot, Michael R. Krames
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Patent number: 8536608Abstract: A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.Type: GrantFiled: March 29, 2012Date of Patent: September 17, 2013Assignee: Koninklijke Philips N.V.Inventors: Aurelien Jean Francois David, Rafael I. Aldaz, Mark Melvin Butterworth, Serge J. A. Bierhuizen
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Patent number: 8507929Abstract: One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vf associated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.Type: GrantFiled: June 16, 2008Date of Patent: August 13, 2013Assignee: Koninklijke Philips Electronics N.V.Inventors: Patrick N. Grillot, Rafael I. Aldaz, Eugene I. Chen, Sateria Salim
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Patent number: 8471280Abstract: In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.Type: GrantFiled: November 6, 2009Date of Patent: June 25, 2013Assignee: Koninklijke Philips Electronics N.V.Inventors: Rafael I. Aldaz, Grigoriy Basin, Paul S. Martin, Michael Krames
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Patent number: 8415656Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.Type: GrantFiled: January 12, 2012Date of Patent: April 9, 2013Assignees: Koninklijke Philips Electronics N.V., Philips Limileds Lighting Company, LLCInventors: Rafael I. Aldaz, Aurelien J. F. David
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Publication number: 20120187372Abstract: An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 ?m in some embodiments, less than 10 ?m in some embodiments. The top side of the semiconductor structure may be textured.Type: ApplicationFiled: March 19, 2012Publication date: July 26, 2012Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Rafael I. Aldaz, John E. Epler, Patrick N. Grillot, Michael R. Krames
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Publication number: 20120181565Abstract: A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.Type: ApplicationFiled: March 29, 2012Publication date: July 19, 2012Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Aurelien J. F. David, Rafael I. ALDAZ, Mark Butterworth, Serge J. Bierhuizen
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Publication number: 20120112161Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.Type: ApplicationFiled: January 12, 2012Publication date: May 10, 2012Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Rafael I. Aldaz, Aurelien J.F. David
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Patent number: 8168998Abstract: A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.Type: GrantFiled: June 9, 2009Date of Patent: May 1, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Aurelien J. David, Rafael I. Aldaz, Mark Butterworth, Serge J. Bierhuizen
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Patent number: 8154042Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.Type: GrantFiled: April 29, 2010Date of Patent: April 10, 2012Assignees: Koninklijke Philips Electronics N V, Philips Lumileds Lighting Company, LLCInventors: Rafael I. Aldaz, Aurelien J. F. David
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Publication number: 20110266568Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.Type: ApplicationFiled: April 29, 2010Publication date: November 3, 2011Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Rafael I. ALDAZ, Aurelien J.F. DAVID
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Patent number: 7989824Abstract: A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact.Type: GrantFiled: April 23, 2010Date of Patent: August 2, 2011Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Rafael I. Aldaz, James G. Neff
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Publication number: 20110108865Abstract: In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.Type: ApplicationFiled: November 6, 2009Publication date: May 12, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Rafael I. ALDAZ, Grigoriy BASIN, Paul S. MARTIN, Michael KRAMES