Patents by Inventor Rafael Reif

Rafael Reif has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition
    Patent number: 4579609
    Abstract: A method and apparatus for low temperature deposition of epitaxial films using low pressure chemical vapor deposition (CVD) with and without plasma enhancement. More specifically, the process enables CVD of epitaxial silicon at temperatures below 800.degree. C. by use of an in situ argon plasma sputter cleaning treatment of the silicon substrate prior to deposition.
    Type: Grant
    Filed: June 8, 1984
    Date of Patent: April 1, 1986
    Assignee: Massachusetts Institute of Technology
    Inventors: L. Rafael Reif, Thomas J. Donahue, Wayne R. Burger