Abstract: A device obtains data, for a current media plan, that includes a cost adjustment factor, a duration of an unexecuted portion of the current media plan that is divisible into periods of time, and an unutilized budget, for the duration, that is divisible into budget portions based on the periods of time. The device generates a predictive baseline cost parameter by adjusting, by the cost adjustment factor, a baseline cost parameter of a previously implemented baseline media plan. The device predicts cost metrics for the current media plan using the predictive baseline cost parameter, and predicts performance metrics for the current media plan based on the cost metrics and predictive baseline cost parameter. The device determines target cost per point (CPP) values for the current media plan based on the cost metrics and performance metrics, and causes an action to be performed based on the target CPP values.

Abstract: A device obtains data, for a current media plan, that includes a cost adjustment factor, a duration of an unexecuted portion of the current media plan that is divisible into periods of time, and an unutilized budget, for the duration, that is divisible into budget portions based on the periods of time. The device generates a predictive baseline cost parameter by adjusting, by the cost adjustment factor, a baseline cost parameter of a previously implemented baseline media plan. The device predicts cost metrics for the current media plan using the predictive baseline cost parameter, and predicts performance metrics for the current media plan based on the cost metrics and predictive baseline cost parameter. The device determines target cost per point (CPP) values for the current media plan based on the cost metrics and performance metrics, and causes an action to be performed based on the target CPP values.

Abstract: An integrated pad and belt for polishing a surface comprising a belt integrated with a polishing pad that forms a seamless polishing surface.

Abstract: A plating method and apparatus using contactless electrode is described. In one embodiment an inductive element is placed proximally to a substrate and a moving electromagnetic field generates an emf in the substrate to plate the surface. In another embodiment, a conductive plate is used, so that the conductive plate and the wafer, separated by a dielectric material, operate as two plates of a capacitor when voltage is applied to the conductive plate. The resulting electrostatic field impresses a charge potential on the substrate to plate the surface of the substrate.

Abstract: An integrated pad and belt for polishing a surface comprising a belt integrated with a polishing pad that forms a seamless polishing surface.

Abstract: An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

Abstract: A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.

Abstract: An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

Abstract: An integrated pad and belt for polishing a surface comprising a belt integrated with a polishing pad that forms a seamless polishing surface.

Abstract: A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.

Abstract: An integrated pad and belt for polishing a surface comprising a belt integrated with a polishing pad that forms a seamless polishing surface.

Abstract: A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.

Abstract: A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

Abstract: A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

Abstract: A method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity. The film thickness monitor comprises a spectrometer.

Abstract: An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

Abstract: A polishing pad dressing method uses a polishing head for polishing a semiconductor wafer. This polishing head includes a housing, a wafer carrier movably mounted to the housing, and a pad dressing element movably mounted to the housing. The wafer carrier forms a wafer-supporting surface, and the dressing element surrounds the wafer-supporting surface. A first fluid actuator is coupled to the dressing element to bias the pad dressing element with respect to the housing, and a second fluid actuator is coupled to the wafer carrier to bias the wafer carrier with respect to the housing. First and second fluid conduits are coupled to the first and second actuators, respectively, such that fluid pressures in the first and second actuators are separately and independently adjustable with respect to one another. Biasing forces on the dressing element can thereby be dynamically adjusted with respect to biasing forces on the carrier during a polishing operation.

Abstract: Buffered slurries are used in a semiconductor process for chemical mechanical polishing of metal layers, such as aluminum or titanium. The slurries may comprise an oxidant capable of causing a passive oxide film to form on a metal based layer. The oxidant may comprise a diluent and may be optionally formulated with a separate oxidizing agent, such as ammonium peroxydisulfate. The slurries may include a buffer that maintains a slurry pH where the passive metal oxide film is stable. This pH may be between about 4 and about 9.

Abstract: A polishing head for polishing a semiconductor wafer includes a housing, a wafer carrier movably mounted to the housing, and a pad dressing element movably mounted to the housing. The wafer carrier forms a wafer-supporting surface, and the dressing element surrounds the wafer-supporting surface. A first fluid actuator is coupled to the dressing element to bias the pad dressing element with respect to the housing, and a second fluid actuator is coupled to the wafer carrier to bias the wafer carrier with respect to the housing. First and second fluid conduits are coupled to the first and second actuators, respectively, such that fluid pressures in the first and second actuators are separately and independently adjustable with respect to one another. Biasing forces on the dressing element can thereby be dynamically adjusted with respect to biasing forces on the carrier during a polishing operation.

Abstract: A technique for utilizing sensors to monitor the polishing of a semiconductor wafer when a linear polisher is utilized to polish the wafer. The sensors are distributed along the surface or are coupled to openings along the surface to monitor the on-going polishing process. The sensed information from the sensors are processed in order to provide feedback for compensating the fluid dispensing when fluid platens are used and/or the downforce exerted by the wafer carrier.