Abstract: Various implementations described herein refer to a device having a memory structure with a substrate. The device may have a signal wire buried or partially buried within at least one of the substrate and a dielectric for transmitting electrical signals. The device may be manufactured as a memory device having a memory cell structure with the signal wire buried or partially buried in the substrate.

Abstract: A memory instance comprises a bitcell array and peripheral circuitry. A bitcell array power supply provides a fixed voltage for the bitcell array, and a peripheral logic power supply provides a variable voltage for peripheral circuitry. A digital power multiplexer is operable to provide a higher of the bitcell array power supply fixed voltage and the peripheral logic power supply variable voltage to the bitcell array.

Abstract: A clocking scheme for a driving a first signal and a write word line signal to a multi-port memory device, the clocking scheme comprising: a clock configured to control timing of operations within the multi-port memory device, wherein the clocking scheme includes at least two separate clocking phases; and activating the first signal line and the write word line in different clock phases of the clocking scheme, such that the first signal line is activated in a first clock phase and the write word line is activated in a second clock phase.

Abstract: Aspects of the present disclosure relate to an apparatus comprising a plurality of processing elements having a spatial layout, and control circuitry to assign workloads to said plurality of processing elements. The control circuitry is configured to, based on a timing parameter, determine one or more active processing elements to deactivate; determine, based on the spatial layout, one or more inactive processing elements to activate; and deactivate said one or more active processing elements and activate said one or more inactive processing elements.

Abstract: Various implementations described herein are related to a device having bitline drivers coupled to passgates of bitcells via bitlines and buried metal lines formed within a substrate including a buried enable signal line and a buried ground line coupled to ground connections of the bitline drivers. The buried enable signal line transfers a negative bias to a selected bitline of the bitlines via the buried ground line that is coupled to the ground connections of the bitline drivers so as to increase gate-source bias of the passgates of the selected bitcell to thereby enhance write capability of the selected bitcell.

Abstract: Various implementations described herein are related to a read multiplexer circuit for a multiport register file, comprising: an input stage coupled to an array of storage nodes, each storage node coupled to drive an output of a respective bitcell; a read stage comprising control logic dividing the array of storage nodes into one or more sets and first circuitry that provides a first read word line to a first storage node of a first set for reading data from the first storage node and a second read word line to a second storage node of the first set for reading data from the second storage node; and a first latch stage comprising second circuitry that provides a third read word line to the first and second storage node of the first set to latch the read from one of the first and second storage nodes.

Abstract: Various implementations described herein are related to a device with a first clock generator that provides a first pulse signal based on a clock signal, wherein the first clock generator has a first tracking circuit that provides a first reset signal based on the first pulse signal. The device may include a second clock generator that provides a second pulse signal based on the clock signal, wherein the second clock generator has a second tracking circuit that provides a first control signal based on the second pulse signal. Also, the device may include a third clock generator that provides a third pulse signal based on the first reset signal, wherein the third clock generator has a logic circuit that provides a second control signal based on the third pulse signal.

Abstract: Various implementations described herein are related to a device having bitline drivers coupled to passgates of bitcells via bitlines and buried metal lines formed within a substrate including a buried enable signal line and a buried ground line coupled to ground connections of the bitline drivers. The buried enable signal line transfers a negative bias to a selected bitline of the bitlines via the buried ground line that is coupled to the ground connections of the bitline drivers so as to increase gate-source bias of the passgates of the selected bitcell to thereby enhance write capability of the selected bitcell.

Abstract: Aspects of the present disclosure relate to an apparatus comprising a plurality of processing elements having a spatial layout, and control circuitry to assign workloads to said plurality of processing elements. The control circuitry is configured to, based on a timing parameter, determine one or more active processing elements to deactivate; determine, based on the spatial layout, one or more inactive processing elements to activate; and deactivate said one or more active processing elements and activate said one or more inactive processing elements.

Abstract: A method for write operations to memory include starting write operations for writing n words in a same row, including loading a first word of the n words during a first clock cycle, where n is an integer greater than 1; loading one or more additional words of the n words, each during a corresponding one or more additional clock cycles; triggering the n words to be stored in the memory; and closing the write operations for the writing of the n words during a final clock cycle, whereby the n words are written in n+1 clock cycles consisting of the first clock cycle, the corresponding one or more additional clock cycles, and the final clock cycle. The write circuitry performing the aforementioned operations can also perform write operations for a single word in two clock cycles.

Abstract: Various implementations described herein are directed to a device having memory circuitry with bitlines coupled to an array of bitcells. The device may include precharge circuitry that precharges the bitlines during modes of operation including a standby mode of operation and an active mode of operation. In some instances, the precharge circuitry may include a low power mode of operation that prevents precharge of the bitlines during the standby mode of operation.

Abstract: A read circuitry for memory includes a column read-out multiplexer (MUX) coupled to a set of columns of the memory, wherein the column read-out MUX receives a column select signal from a control circuit to output a corresponding column output from the set of columns; and a single sense amplifier coupled to receive the corresponding column output of the column read-out MUX.

Abstract: A method for write operations to memory include starting write operations for writing n words in a same row, including loading a first word of the n words during a first clock cycle, where n is an integer greater than 1; loading one or more additional words of the n words, each during a corresponding one or more additional clock cycles; triggering the n words to be stored in the memory; and closing the write operations for the writing of the n words during a final clock cycle, whereby the n words are written in n+1 clock cycles consisting of the first clock cycle, the corresponding one or more additional clock cycles, and the final clock cycle. The write circuitry performing the aforementioned operations can also perform write operations for a single word in two clock cycles.

Abstract: A method for write operations to memory include starting write operations for writing n words in a same row, including loading a first word of the n words during a first clock cycle, where n is an integer greater than 1; loading one or more additional words of the n words, each during a corresponding one or more additional clock cycles; triggering the n words to be stored in the memory; and closing the write operations for the writing of the n words during a final clock cycle, whereby the n words are written in n+1 clock cycles consisting of the first clock cycle, the corresponding one or more additional clock cycles, and the final clock cycle. The write circuitry performing the aforementioned operations can also perform write operations for a single word in two clock cycles.

Abstract: Various implementations described herein are directed to a device having a power-gate structure with multiple transistors including a first transistor and a second transistor. The first transistor may be coupled between a first voltage node and a second voltage node, and the second transistor may be coupled between the second voltage node and a third voltage node that is coupled to the second voltage node.

Abstract: Various implementations described herein are directed to a device having first transistors arranged as cross-coupled inverters coupled between a disconnect node and ground. The device may have second transistors arranged as passgates coupled between the cross-coupled inverters and bitlines. The device may have third transistors coupled between a voltage supply and the disconnect node.

Abstract: According to one implementation of the present disclosure, a method includes performing a spatial alignment of at least one of first or second data tiers of a circuit; and performing a computation based on the spatial alignment of the at least one of the first and second data tiers. According to another implementation of the present disclosure, a circuit includes: a compute circuitry; and at least first and second data tiers of two or more data tiers positioned at least partially overlapping one another. In an example, each of the at least first and second data tiers is coupled to the compute circuitry. In certain implementations, the positioning of the first and second data tiers at least partially overlapping one another corresponds to a spatial alignment.

Abstract: A burst read with flexible burst length for on-chip memory, such as, for example, system cache memory, hierarchical cache memory, system memory, etc. is provided. Advantageously, successive burst reads are performed with less signal toggling and fewer bitline swings.

Abstract: Various implementations described herein are related to a device with a first clock generator that provides a first pulse signal based on a clock signal, wherein the first clock generator has a first tracking circuit that provides a first reset signal based on the first pulse signal. The device may include a second clock generator that provides a second pulse signal based on the clock signal, wherein the second clock generator has a second tracking circuit that provides a first control signal based on the second pulse signal. Also, the device may include a third clock generator that provides a third pulse signal based on the first reset signal, wherein the third clock generator has a logic circuit that provides a second control signal based on the third pulse signal.

Abstract: Various implementations described herein are directed to a device having memory with banks of bitcells with each bank having a bitcell array. The device may have header circuitry that powers-up a selected bank and powers-down unselected banks during a wake-up mode of operation. In some instances, only the selected bank of the memory is powered-up with the header circuitry during the wake-up mode of operation.