Abstract: When data blocks of a data seglet are compressed using a shared dictionary and when the requested data block (or blocks) do not include the last data block of the data seglet, an optimization in the read path may involve decompressing a certain portion of the data seglet from a starting position of the data seglet to a decompression endpoint of the data seglet, but not including the portion of the data seglet following the decompression endpoint. Such technique may involve the storing of a mapping that maps, for each data block within the data seglet, an identifier of the data block to a decompression endpoint that indicates a portion of the data seglet that includes the data block.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: Methods, systems, and computer programs are presented for dynamic adaptive compression in a storage device. One method includes operations for setting a percentage factor for utilizing a first and a second compression algorithms, and for receiving incoming blocks in the memory of the storage device. The incoming blocks are compressed before being sent to permanent storage, where a portion of the incoming blocks are compressed with the first compression algorithm based on the percentage factor, and the remainder is compressed with the second compression algorithm. Further, the method includes determining that a processor utilization rate, of a processor in the storage device, is below a first predetermined threshold, and decreasing, in response to the determining, the percentage factor to decrease the portion of the incoming blocks that are compressed with the first compression algorithm, while the remainder of the incoming blocks is compressed with the second compression algorithm.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Abstract: Methods, systems, and computer programs are presented for dynamic adaptive compression in a storage device. One method includes operations for setting a percentage factor for utilizing a first and a second compression algorithms, and for receiving incoming blocks in the memory of the storage device. The incoming blocks are compressed before being sent to permanent storage, where a portion of the incoming blocks are compressed with the first compression algorithm based on the percentage factor, and the remainder is compressed with the second compression algorithm. Further, the method includes determining that a processor utilization rate, of a processor in the storage device, is below a first predetermined threshold, and decreasing, in response to the determining, the percentage factor to decrease the portion of the incoming blocks that are compressed with the first compression algorithm, while the remainder of the incoming blocks is compressed with the second compression algorithm.

Abstract: A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.

Abstract: A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

Abstract: Methods and apparatus are described for performing cell selection for reducing an initial acquisition time between a user equipment (UE) and a network entity, comprising measuring a signal from a cell, the signal including at least one system information block (SIB), wherein the at least one SIB includes a plurality of cell selection threshold values; attempting to decode the at least one SIB; determining, in response to successfully decoding the at least one SIB, whether one or more measurements of the signal pass or fail a cell selection criteria check that includes the plurality of cell selection threshold values; determining, in response to the cell selection criteria check failing, whether the plurality of cell selection threshold values are within range of a plurality of corresponding minimum network threshold values; and performing a cell selection procedure on the cell in response to determining that the plurality of cell selection threshold values are within range of the plurality of corresponding mi

Abstract: Apparatuses and methods are described herein for managing communications in a wireless communication device, including, but not limited to determining failure to receive a first block, sending a signal as an indication for retransmission of systematic bits instead of sending a negative-acknowledgement (NACK) signal, and receiving a second block including the systematic bits.

Abstract: A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Abstract: Embodiments of the invention include a method for separating a wafer including a growth substrate and a plurality of devices formed on the growth substrate and arranged in a plurality of rows separated by at least one street. The wafer includes a front side on which the plurality of devices are formed and a back side, which is a surface of the growth substrate. The method includes scribing a first scribe line aligned with the street on the front side, scribing a second scribe line aligned with the street on the back side, and scribing a third scribe line aligned with the street on the back side.

Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.