Abstract: An electronic device includes a rectangular ceramic package structure having opposite first and second sides, an interior cavity that extends to an opening in the second side, opposite third and fourth sides spaced along a first direction, opposite fifth and sixth sides spaced along an orthogonal second direction, and non-conductive indents extending into the third and fourth sides. The device also includes a semiconductor die in the cavity, a lid that covers the opening and seals the cavity, a conductive terminal having a planar side exposed along the first side that is electrically coupled to a circuit of the semiconductor die and extends to a first one of the non-conductive indents, and conductive pins spaced apart from the conductive terminal and extending outward from the first side of the ceramic package structure along a third direction.

Abstract: An electronic device includes a multilevel package substrate, a semiconductor die, and a package structure, the multilevel package substrate having a first level, a second level, and a filter circuit in the first and second levels. The filter circuit includes a filter input terminal, a first capacitor, a first inductor, a second capacitor, a second inductor, a filter output terminal, and a reference terminal. The semiconductor die is attached to the multilevel package substrate and has a conductive structure coupled to one of the terminals of the filter circuit, and the package structure encloses the semiconductor die and a portion of the multilevel package substrate.

Abstract: An electronic device includes conductive leads, a conductive crossbar, and first and second bond wires. The conductive leads are arranged in a row along a side of a package structure and include a conductive first lead, a conductive second lead, and a conductive third lead. The first and second leads are non-adjacent, the third lead is between the first and second leads in the row, and the crossbar electrically connects the first and second leads. The first bond wire electrically connects a first conductive feature of a semiconductor die to one of the crossbar, the first lead, and the second lead, and the second bond wire electrically connects a second conductive feature of the semiconductor die to the third lead.

Abstract: An example device includes: a multilayer build-up package substrate including trace conductor layers spaced from one another by dielectric material, and further including connection conductor layers coupling portions of the trace conductor layers through dielectric material, the multilayer build-up package substrate having a device side surface with one of the trace conductor layers and an opposing board side surface with one of the connection conductor layers; and a waveguide transition formed from the multilayer build-up package substrate, the waveguide transition having an input port formed from the connection conductor layer on the board side surface, and having at least two sub-transitions spaced laterally from one another, the at least two sub-transitions to couple a signal from the input port through the trace conductor layers and the connection conductor layers to a coplanar waveguide formed from the trace conductor layer on the device side surface.

Abstract: One example includes an antenna-on-package system that includes a multi-layer antenna structure. The antenna structure includes a first conductive layer having a patch antenna and a transmission line. The transmission line extends from a feed-side edge of the patch antenna to terminate in a launch structure. The antenna structure also includes a second conductive layer having a ground reflector spaced apart from the first conductive layer by a layer of dielectric material. An integrated circuit (IC) die has a signal terminal on surface of the IC die, and a conductive signal interconnect extends through the layer of dielectric material and is coupled between the signal terminal and the launch structure.

Abstract: An example microelectronic device package includes: a multilayer package substrate comprising routing conductors spaced by dielectric material, the multilayer package substrate having a device side surface and an opposing board side surface, and having a recessed portion extending from the device side surface and exposing routing conductors beneath the device side surface of the multilayer package substrate; a semiconductor die mounted to the device side surface of the multilayer package substrate and coupled to the routing conductors; a passive component mounted to the routing conductors exposed in the recessed portion of the multilayer package substrate; and mold compound covering the semiconductor die, the passive component, and a portion of the multilayer package substrate.

Abstract: Described examples include a method having steps of laying out at least two conductors and modeling conductor current through the at least two conductors to determine a current density in the at least two conductors. The method also has steps of revising the at least two conductors as adjusted conductors to add conductive material to areas of the conductor where the modeling conductor current shows above average current density; fabricating the adjusted conductors; and mounting a die to the adjusted conductors.

Abstract: An example microelectronic device package includes: a multilayer package substrate including a slotted waveguide antenna and having routing conductors, the multilayer package substrate having a device side surface and an opposing board side surface; a semiconductor die mounted to the device side surface of the multilayer package substrate and coupled to slotted waveguide antenna by the routing conductors; and mold compound covering the semiconductor die, and a portion of the multilayer package substrate.

Abstract: A semiconductor package includes a multilayer package substrate including a first layer including a first dielectric and first metal layer including a first metal trace and a second layer including a second dielectric layer. An integrated circuit (IC) die includes bond pads, with a bottom side of the IC die attached to the first metal trace. Metal pillars are through the second dielectric layer connecting to the first metal trace. A third layer on the second layer includes a third dielectric layer on the second layer extending to a bottom side of the semiconductor package, and a second metal layer including second metal traces including inner second metal traces connected to the bond pads and outer second metal traces over the metal pillars, and filled vias providing externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package.

Abstract: A multi-channel gate driver package includes a leadframe including a first, second, and third die pad. A transmitter die includes first and second transmitter signal bond pads, a first receiver die including a second signal bond pad, and a second receiver die including a third signal bond pad. A bond wire is between the first transmitter signal bond pad and the second signal bond pad, and between the second transmitter signal bond pad and third signal bond pad. A ring shield is around the respective signal bond pads. A downbond is from the second ring shield to the second die pad, and from the third ring shield to the third die pad. A connection connects the first and second transmitter ring shield to at least one ground pin of the package. The second and third die pad each include a direct integral connection to the ground pin.

Abstract: A semiconductor package includes a multilayer package substrate including a first layer including a first dielectric and first metal layer including a first metal trace and a second layer including a second dielectric layer. An integrated circuit (IC) die includes bond pads, with a bottom side of the IC die attached to the first metal trace. Metal pillars are through the second dielectric layer connecting to the first metal trace. A third layer on the second layer includes a third dielectric layer on the second layer extending to a bottom side of the semiconductor package, and a second metal layer including second metal traces including inner second metal traces connected to the bond pads and outer second metal traces over the metal pillars, and filled vias providing externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package.

Abstract: A semiconductor package includes a multilayer package substrate including a first layer including a first dielectric and first metal layer including a first metal trace and a second layer including a second dielectric layer. An integrated circuit (IC) die includes bond pads, with a bottom side of the IC die attached to the first metal trace. Metal pillars are through the second dielectric layer connecting to the first metal trace. A third layer on the second layer includes a third dielectric layer on the second layer extending to a bottom side of the semiconductor package, and a second metal layer including second metal traces including inner second metal traces connected to the bond pads and outer second metal traces over the metal pillars, and filled vias providing externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package.

Abstract: An apparatus, method and system are provided for quantifying communication channel intersymbol interference jitter effect contribution to timing skew. In general, lossy and lossless characteristics of the communication channel are preferably obtained and an output signal of the communication channel is sampled. From the sampled output signal and the lossy characteristics of the communication channel, an input signal may be derived. Using the lossless characteristics of the communication channel, the derived input signal and the sampled output signal, a value indicating the contribution of intersymbol interference jitter effect on timing skew budget for a selection communication channel may be obtained.

Abstract: A digital signal waveform receiving circuit may be processed by a non-linear adaptive canonical correlation analysis circuit that may quantify and minimize crosstalk-induced jitter timing skew for improving set-up and hold timing margins of data streams on the receiving circuit. A non-linear adaptive canonical correlation analysis circuit may be placed between an incoming digital signal from a serial link and a PHY receiving layer of an information handling system 100. The PHY receiving layer of the information handling system may be coupled to the non-linear adaptive canonical correlation analysis circuit or may be coupled to the digital signal. This coupling selection may be automatically programmed depending on received signal cross-talk-induced jitter timing skew or may be programmed by a user of the information handling system.

Abstract: An integrated circuit (IC) device (200) includes an electronic substrate (201) having a plurality of layers (120) including at least one first electrically conductive layer and a lower surface dielectric layer. The IC device also includes an electrically conductive surface layer (126) disposed on the dielectric layer and coupled to a ground terminal (210) for the electronic substrate (201) for blocking electromagnetic interference (EMI). In the IC device, the conductive surface layer (126) includes an EMI shield region (204) over at least a portion of the dielectric layer. The EMI shield region (204) includes at least one solid area (206) and one or more adhesion areas (207) having a plurality of openings (208) arranged aperiodically in the adhesion areas (207).

Abstract: A wavelet transform noise minimization circuit comprises a differential receiver, a voltage comparator, a wavelet transform circuit, an electrical idle (EI) detector circuit, a phase interpolator, a phase-locked-loop (PLL), and a reference clock buffer. The wavelet transform noise minimization circuit may be beneficially applied wherever there is non-deterministic (e.g., random) noise in the PHY layer during an electrical idle state. The wavelet transform noise minimization circuit may be used to improve noise margin during an electrical idle state, and/or reduce the occurrence of false activation of a PHY layer when in the electrical idle state.

Abstract: Packaged integrated circuits having surface mount devices and methods to form the same are disclosed. A disclosed method comprises attaching an integrated circuit to a first side of a substrate, forming one or more first conductive elements on the substrate, attaching a surface mount device to a second side of the substrate via the first conductive elements, forming one or more second conductive elements on the second side of the substrate.

Abstract: An apparatus, method and system are provided for quantifying communication channel intersymbol interference jitter effect contribution to timing skew. In general, lossy and lossless characteristics of the communication channel are preferably obtained and an output signal of the communication channel is sampled. From the sampled output signal and the lossy characteristics of the communication channel, an input signal may be derived. Using the lossless characteristics of the communication channel, the derived input signal and the sampled output signal, a value indicating the contribution of intersymbol interference jitter effect on timing skew budget for a selection communication channel may be obtained.

Abstract: A methodology may be used that takes into account the inductive coupling of current transients on the power rails of a printed circuit board (PCB) that may be coupled to the barrel of a via. By taking into account the coupling of the current transients on the power rails of the PCB, more accurate and realistic modeling results may be obtained. Inductive coupling of the current transients from the power rails may be more pronounced at higher frequencies and may be additive for more layer transitions (e.g., more via transitions) of the PCB.

Abstract: A system, apparatus and method for controlled impedance at transitional via sites using barrel inductance minimization are provided. In one embodiment, one or more sidewalls of a via barrel are preferably processed such that conductive material disposed thereon is selectively removed thereby forming an inner-via trace connecting one or more conductive traces and/or pads on a first substrate layer to one or more conductive traces and/or pads on a second substrate layer. Removal of conductive material from a sidewall of the via barrel is done in a manner such that an inner-via trace traveling from a first surface to a second surface of one or more substrate layers possesses at least one electrical characteristic substantially approximating a corresponding electrical characteristic of those structures to which the inner-via trace is connected.