Abstract: Chucks for mounting and retaining semiconductor wafers during processing are described, particularly suited for wafer processing involving total immersion of the wafer-chuck structure in a liquid. Chuck structures are disclosed for preventing or hindering processing chemicals from contacting and contaminating large portions of the underside of the wafer undergoing processing, limiting such chemical contact to readily cleaned, relatively small annular regions on the periphery of the wafer. Embodiments include structures with supplemental gas flows on the underside of the wafer as well as the creation of gas/liquid meniscusci to prevent chemical penetration of the wafer's underside. Methods of processing semiconductor wafers employing such chucks are also described.

Abstract: A pressure gauge may be coupled to a supply line which carries liquid from a bottle to either one or more mixing vessels and/or one or more reactors in a combinatorial processing tool. A control device may monitor the pressure measured by the pressure gauge, and the control device may be configured to change the pressure supplied to the bottle based on a comparison of the measured pressure to a predetermined pressure value. The control device may adjust the pressure provided to the bottle using a pressure regulator coupled to the pressure source. By changing the pressure provided to the bottle, the control device may maintain a relatively constant flow rate of fluids from the liquid source into one or more mixing vessels and/or the one or more reactors.

Abstract: In one implementation, a method for providing a fluid at a target pressure may include providing a fluid at a velocity to a supply line through a dispenser, measuring a pressure of the fluid flowing through the supply line, comparing the measured pressure with the target pressure, and adjusting the velocity based on the results of the comparison.

Abstract: A spin deposition apparatus includes a deposition mask configured to be arranged proximate a target substrate. The deposition mask includes at least one fluid reservoir offset from a rotational axis of the deposition mask and configured to hold fluid for dispersal on a portion of a surface of the target substrate.

Abstract: Overlapping combinatorial processing can offer more processed regions, better particle performance and simpler process equipment. In overlapping combinatorial processing, one or more regions are processed in series with some degrees of overlapping between regions. In some embodiments, overlapping combinatorial processing can be used in conjunction with non-overlapping combinatorial processing and non-combinatorial processing to develop and investigate materials and processes for device processing and manufacturing.

Abstract: An apparatus and method for combinatorial non-contact wet processing of a liquid material may include a source of a liquid material, a first reaction cell, a second reaction cell, a first plurality of gas jets disposed within an interior of the first reaction cell, the first plurality of gas jets configured to atomize the liquid material transferred to the interior of the first reaction cell, a second plurality of gas jets disposed within an interior of the second reaction cell, the second plurality of gas jets configured to atomize the liquid material transferred to the interior of the second reaction cell, a first vacuum element disposed along a periphery of the first reaction cell, and a second vacuum element disposed along a periphery of the at least a second reaction cell.

Abstract: An apparatus and method for combinatorial non-contact wet processing of a liquid material may include a source of a liquid material, a first reaction cell, a second reaction cell, a first plurality of gas jets disposed within an interior of the first reaction cell, the first plurality of gas jets configured to atomize the liquid material transferred to the interior of the first reaction cell, a second plurality of gas jets disposed within an interior of the second reaction cell, the second plurality of gas jets configured to atomize the liquid material transferred to the interior of the second reaction cell, a first vacuum element disposed along a periphery of the first reaction cell, and a second vacuum element disposed along a periphery of the at least a second reaction cell.

Abstract: Overlapping combinatorial processing can offer more processed regions, better particle performance and simpler process equipment. In overlapping combinatorial processing, one or more regions are processed in series with some degrees of overlapping between regions. In some embodiments, overlapping combinatorial processing can be used in conjunction with non-overlapping combinatorial processing and non-combinatorial processing to develop and investigate materials and processes for device processing and manufacturing.

Abstract: Overlapping combinatorial processing can offer more processed regions, better particle performance and simpler process equipment. In overlapping combinatorial processing, one or more regions are processed in series with some degrees of overlapping between regions. In some embodiments, overlapping combinatorial processing can be used in conjunction with non-overlapping combinatorial processing and non-combinatorial processing to develop and investigate materials and processes for device processing and manufacturing.

Abstract: An open-bottomed reactor cell for wet processing of substrates can be configured to confine a process liquid to an area under the cell (processing the “internal site”), or alternatively to exclude the process liquid from most of the area under the cell (processing the “external site”) without physical contact between the cell and substrate. A slight underpressure or overpressure maintained inside the main cavity of the cell causes the liquid to form a meniscus in the narrow gap between the cell and substrate rather than flowing outside the desired process area. An area under a peripheral channel outside the main cavity of the cell is shared by both the internal site and the external side, allowing the entire substrate to be processed.

Abstract: A substrate for processing in a heating system is disclosed. The substrate includes a bottom portion for absorbing heat from a radiating heat source, the bottom portion having a first region having a first emissivity and a second region having a second emissivity less than the first emissivity. The first region and the second region promote thermal uniformity of the substrate by compensating for thermal non-uniformity of the radiating heat source.

Abstract: Embodiments of the current invention describe a substrate processing tool. The substrate processing tool includes a housing defining a chamber, a substrate support, a container, and an impelling mechanism. The substrate support is coupled to the housing and configured to support a substrate within the chamber. The container is coupled to the housing within the chamber and configured to hold a liquid. The container is below and spaced apart from the substrate. The impelling mechanism is coupled to the housing and configured to apply a force to the liquid within the container such that an impelled portion of the liquid contacts a lower surface of the substrate.

Abstract: Overlapping combinatorial processing can offer more processed regions, better particle performance and simpler process equipment. In overlapping combinatorial processing, one or more regions are processed in series with some degrees of overlapping between regions. In some embodiments, overlapping combinatorial processing can be used in conjunction with non-overlapping combinatorial processing and non-combinatorial processing to develop and investigate materials and processes for device processing and manufacturing.

Abstract: Chucks for mounting and retaining semiconductor wafers during processing are described, particularly suited for wafer processing involving total immersion of the wafer-chuck structure in a liquid. Chuck structures are disclosed for preventing or hindering processing chemicals from contacting and contaminating large portions of the underside of the wafer undergoing processing, limiting such chemical contact to readily cleaned, relatively small annular regions on the periphery of the wafer. Embodiments include structures with supplemental gas flows on the underside of the wafer as well as the creation of gas/liquid meniscusci to prevent chemical penetration of the wafer's underside. Methods of processing semiconductor wafers employing such chucks are also described.

Abstract: A spin deposition apparatus includes a deposition mask configured to be arranged proximate a target substrate. The deposition mask includes at least one fluid reservoir offset from a rotational axis of the deposition mask and configured to hold fluid for dispersal on a portion of a surface of the target substrate.

Abstract: An apparatus for combinatorial site-isolated thin film deposition may include a source of a liquid precursor, a nebulizer configured to convert the liquid precursor to an aerosolized mist of particles, a first deposition cell configured to direct an aerosolized mist of particles onto a first selected region of the substrate, and a second deposition cell configured to direct an aerosolized mist of particles onto a second selected region of the substrate. A method for combinatorial site-isolated thin film deposition may include providing a liquid precursor, converting the liquid precursor to an aerosolized mist of particles, transporting the aerosolized mist of particles to a first deposition cell and a second deposition cell in proximity to a surface of a substrate, and depositing the transported aerosolized mist of particles onto a first selected region and a second selected region of the surface of the substrate.

Abstract: A protective chuck is disposed on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region against a fluid layer covering the substrate surface. In some embodiments, the pressure fluctuation at the gas layers is monitored, and through the dynamic feedback, the gas flow rate can be adjusted to achieve a desired operation regime. The dynamic control of operation regime setting can also be applied to high productivity combinatorial systems having an array of protective chucks.

Abstract: A protective chuck is disposed on a substrate with a gas bearing layer between the bottom surface of the protective chuck and the substrate surface. The gas bearing layer protects a surface region against a fluid layer covering the substrate surface. The protection of the gas bearing is a non-contact protection, reducing or eliminating potential damage to the substrate surface due to friction. The gas bearing can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: Methods and apparatuses are disclosed for rinsing the interface area of a liquid and air boundary after a substrate cleaning process using gas barrier. In some embodiments, a protective chuck having an inner gas ring and an outer liquid ring can be used to clean the area under the edge of the protective chuck. A gas flowing outward from the gas ring can enable a liquid to flow outward from the liquid ring, rinsing the outer portion of the protective chuck. The interface rinsing process can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: An apparatus and system for stirring liquid inside a flow cell. In one implementation, the apparatus includes a rotatable disc configured to receive liquid at a top side of the disc and distribute the liquid substantially evenly around a periphery of the flow cell. The disc has a triangular cross sectional area. The apparatus may further include a set of fins attached to a bottom side of the disc, wherein the set of fins is configured to draw the liquid from the periphery of the flow cell into the center of the flow cell.