Abstract: A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.

Abstract: A solar pod system, comprising of an oval transparent enclosure. The oval transparent enclosure encapsulates a circular paraboloidal reflector mounted on solar cell. The solar cell extends over the circular parabolic reflector to place the focus of the paraboloidal reflector on the solar cell, whereby the solar cell receives light reflected by the circular parabolic reflector.

Abstract: A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.

Abstract: A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.

Abstract: A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.

Abstract: A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.

Abstract: A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.

Abstract: A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.

Abstract: A device that includes a semiconductor device and a contact electrode with a first side that is opposite a second side. The first side abuts the semiconductor device. The contact electrode has a stoichiometry that varies from the first side to the second side. The stoichiometry of the first side inhibits the diffusion of metal from the semiconductor device into the first contact electrode.

Abstract: A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.

Abstract: A method and associated system. A user interest rating for a downloadable item stored outside a user device is computed, which includes: maintaining a user profile of a user's preference for types of items that include the downloadable item, identifying one or more characteristics of the downloadable item, and predicting a likely level of user interest for the downloadable item based on the identified characteristics of the downloadable item and the user profile. A data impact rating for the downloadable item is computed, which includes identifying parameters. A download decision, of whether to download the downloadable item, is computed in dependence on the user interest rating for the downloadable item and the data impact rating for the downloadable item.

Abstract: A device that includes a semiconductor device and a contact electrode with a first side that is opposite a second side. The first side abuts the semiconductor device. The contact electrode has a stoichiometry that varies from the first side to the second side. The stoichiometry of the first side inhibits the diffusion of metal from the semiconductor device into the first contact electrode.

Abstract: A solar pod system, comprising of an oval transparent enclosure. The oval transparent enclosure encapsulates a circular paraboloidal reflector mounted on solar cell. The solar cell extends over the circular parabolic reflector to place the focus of the paraboloidal reflector on the solar cell, whereby the solar cell receives light reflected by the circular parabolic reflector.

Abstract: A workfunction modulation-based sensor comprising a field-effect transistor (FET). The FET comprises a substrate, a gate dielectric, a metal gate, a source, a drain, and a layer of sensing material that is electrically connected to the metal gate. An electrical connection that connects to the source of the FET. An electrical connection that connects to the drain of the FET. An electrical connection that connects to the layer of sensing material. An environment that includes an adsorbate gas surrounding, at least a portion of, the layer of sensing material. Wherein the sensing material is adapted to adsorb, at least in part, the adsorbate gas. The amount of adsorbate gas adsorbed on the layer of sensing material modulates the workfunction of the FET such that the degree of adsorbate gas adsorption corresponds to one of the temperature or pressure associated with the environment of the FET.

Abstract: A workfunction modulation-based sensor comprising a field-effect transistor (FET). The FET comprises a substrate, a gate dielectric, a metal gate, a source, a drain, and a layer of sensing material that is electrically connected to the metal gate. An electrical connection that connects to the source of the FET. An electrical connection that connects to the drain of the FET. An electrical connection that connects to the layer of sensing material. An environment that includes an adsorbate gas surrounding, at least a portion of, the layer of sensing material. Wherein the sensing material is adapted to adsorb, at least in part, the adsorbate gas. The amount of adsorbate gas adsorbed on the layer of sensing material modulates the workfunction of the FET such that the degree of adsorbate gas adsorption corresponds to one of the temperature or pressure associated with the environment of the FET.