Abstract: According to one embodiment of the present invention, an apparatus is disclosed. The apparatus includes a memory array having a plurality of memory cells. The apparatus further includes memory access circuits coupled to the memory array and configured to perform write operations responsive to control signals. The apparatus further includes control logic coupled to the memory access circuits and configured to apply a set of write parameters based, at least in part, on a number of write operations performed by the memory access circuits and further configured to provide control signals to the memory access circuits to perform write operations on the plurality of memory cells according to the set of write parameters.

Abstract: Technologies for providing a scalable architecture to efficiently perform compute operations in memory include a memory having media access circuitry coupled to a memory media. The media access circuitry is to access data from the memory media to perform a requested operation, perform, with each of multiple compute logic units included in the media access circuitry, the requested operation concurrently on the accessed data, and write, to the memory media, resultant data produced from execution of the requested operation.

Abstract: Methods, systems, and devices for operating a memory array are described. A memory controller may be configured to provide enhanced bandwidth on a command/address (C/A) bus, which may have a relatively low pin count, through use of a next partition command that may repeat an array command from a current partition at a different partition indicated by the next partition command. Such a next partition command may use fewer clock cycles than a command that includes a complete instruction and memory location information.

Abstract: Technologies for providing multiple levels of error correction include a memory that includes media access circuitry coupled to a memory media. The media access circuitry is to read data from the memory media. Additionally, the media access circuitry is to perform, with an error correction logic unit located in the media access circuitry, error correction on the read data to produce error-corrected data.

Abstract: Cross point memory architectures, devices, systems, and methods are disclosed and described, and can include a cross point memory core subsystem having increased bandwidth that is scalable. The memory core can include a plurality of independently operating partitions, each comprising a plurality of cross point memory arrays.

Abstract: Uncorrectable memory errors may be reduced by determining a logical array address for a set of memory arrays and transforming the logical array address to at least two unique array addresses based, at least in part, on logical locations of at least two memory arrays within the set of memory arrays. The at least two memory arrays are then accessed using the at least two unique array addresses, respectively.

Abstract: A memory device performs DLL (delay locked loop) calibration in accordance with a DLL calibration mode configured for the memory device. A host controller can configure the calibration mode based on operating conditions for the memory device. The memory device includes an input/output (I/O) interface circuit and a delay locked loop (DLL) circuit coupled to control I/O timing of the I/O interface. A control circuit of the memory device selectively enables and disables DLL calibration in accordance with the DLL calibration mode. When selectively enabled, the DLL calibration is to operate at a time interval identified by the DLL calibration mode, and when selectively disabled, the DLL calibration is to cease or refrain from DLL calibration operations.

Abstract: Apparatuses and methods for performing multithread, concurrent access of different partition of a memory are disclosed herein. An example apparatus may include a non-volatile memory array comprising a plurality of partitions. Each of the plurality of partitions may include a respective plurality of memory cells. The apparatus may further include a plurality of local controllers that are each configured to independently and concurrently access a respective one of the plurality of partitions to execute a respective memory access command of a plurality of memory access commands responsive to receiving the respective memory access command. The example apparatus may further include a controller configured to receive the plurality of memory access commands and to determine a respective target partition of the plurality of partitions for each of the plurality of memory access commands.

Abstract: Technologies for providing a scalable architecture to efficiently perform compute operations in memory include a memory having media access circuitry coupled to a memory media. The media access circuitry is to access data from the memory media to perform a requested operation, perform, with each of multiple compute logic units included in the media access circuitry, the requested operation concurrently on the accessed data, and write, to the memory media, resultant data produced from execution of the requested operation.

Abstract: Technologies for column reads for clustered data include a device having a column-addressable memory and circuitry connected to the memory. The column-addressable memory includes multiple dies. The circuitry may be configured to determine multiple die offsets based on a logical column number of the data cluster, determine a base address based on the logical column number, program the dies with the die offsets. The circuitry is further to read logical column data from the column-addressable memory. To read the data, each die adds the corresponding die offset to the base address. The column-addressable memory may include multiple command/address buses. The circuitry may determine a starting address for each of multiple logical columns and issue a column read for each starting address via a corresponding command/address bus. Other embodiments are described and claimed.

Abstract: Technologies for media management for providing column data layouts for clustered data include a device having a column-addressable memory and circuitry connected to the memory. The circuitry is configured to store a data cluster of a logical matrix in the column-addressable memory with a column-based format and to read a logical column of the data cluster from the column-addressable memory with a column read operation. Reading the logical column may include reading logical column data diagonally from the column-address memory, including reading from the data cluster and a duplicate copy of the data cluster. Reading the logical column may include reading from multiple complementary logical columns. Reading the logical column may include reading logical column data diagonally with a modulo counter. The column data may bread from a partition of the column-address memory selected based on the logical column number. Other embodiments are described and claimed.

Abstract: Technologies for performing stochastic similarity searches in an online clustering space include a device having a column addressable memory and circuitry. The circuitry is configured to determine a Hamming distance from a binary dimensionally expanded vector to each cluster of a set of clusters of binary dimensionally expanded vectors in the memory, identify the cluster having the smallest Hamming distance from the binary dimensionally expanded vector, determine whether the identified cluster satisfies a target size, and add or delete, in response to a determination that the identified cluster does not satisfy the target size, the binary dimensionally expanded vector to or from the identified cluster.

Abstract: Apparatuses and methods for performing multithread, concurrent access of different partition of a memory are disclosed herein. An example apparatus may include a non-volatile memory array comprising a plurality of partitions. Each of the plurality of partitions may include a respective plurality of memory cells. The apparatus may further include a plurality of local controllers that are each configured to independently and concurrently access a respective one of the plurality of partitions to execute a respective memory access command of a plurality of memory access commands responsive to receiving the respective memory access command. The example apparatus may further include a controller configured to receive the plurality of memory access commands and to determine a respective target partition of the plurality of partitions for each of the plurality of memory access commands.

Abstract: According to one embodiment of the present invention, an apparatus is disclosed. The apparatus includes a memory array having a plurality of memory cells. The apparatus further includes memory access circuits coupled to the memory array and configured to perform write operations responsive to control signals. The apparatus further includes control logic coupled to the memory access circuits and configured to apply a set of write parameters based, at least in part, on a number of write operations performed by the memory access circuits and further configured to provide control signals to the memory access circuits to perform write operations on the plurality of memory cells according to the set of write parameters.

Abstract: Data reliability and integrity may be compromised when memory resources used to store the data reach elevated temperatures. A sensor in the memory resource may monitor the temperature of the memory resource in real-time. A comparator in the memory resource may indicate a high temperature condition to a memory controller. The memory controller, in response to the high temperature condition, can restrict or halt data flow to the memory resource. When the real-time temperature of the memory resource falls below a defined threshold, the memory controller may resume data flow to the memory resource.

Abstract: A memory system includes a nonvolatile (NV) memory device with asymmetry between intrinsic read operation delay and intrinsic write operation delay. The system can select to perform memory access operations with the NV memory device with the asymmetry, in which case write operations have a lower delay than read operations. The system can alternatively select to perform memory access operations with the NV memory device where a configured write operation delay that matches the read operation delay.

Abstract: According to one embodiment of the present invention, an apparatus is disclosed. The apparatus includes a memory array having a plurality of memory cells. The apparatus further includes memory access circuits coupled to the memory array and configured to perform write operations responsive to control signals. The apparatus further includes control logic coupled to the memory access circuits and configured to apply a set of write parameters based, at least in part, on a number of write operations performed by the memory access circuits and further configured to provide control signals to the memory access circuits to perform write operations on the plurality of memory cells according to the set of write parameters.

Abstract: Techniques for proximity based on-die termination (ODT) include a memory device determining what ODT setting to apply during execution of a command by another memory device that is coupled to a same data channel as the memory device based on the memory device's proximity to the other memory device and whether the command is a read command or a write command.

Abstract: Devices, systems, and methods having increased efficiency selective writing to memory are disclosed and described. A memory controller, upon receiving a dirty data segment, performs a read-modify-write to retrieve a corresponding data line from memory, saves a copy of the data line, merges the dirty data segment into the appropriate location in the data line to create a modified data line, and generates a write mask from the modified data line and the copy of the data line.

Abstract: According to one embodiment, an apparatus is disclosed. The apparatus includes a memory device having a device identification, The apparatus further includes a low power wake circuit configured to receive a low power wake signal and an identification information, and further configured to initiate a transition of the memory device from a low power state to an active state responsive to an active low power wake signal and the wake identification information matching the device identifier.