Abstract: An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.

Abstract: An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.

Abstract: An integrated circuit includes a bipolar transistor extending into a [100] surface of a semiconductor substrate having a crystalline lattice. A deep trench surrounds the bipolar transistor and has a path having a plurality of sides. At least one side extends in a direction parallel to a <100> axis of the crystalline lattice.

Abstract: An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.

Abstract: A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.

Abstract: A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.

Abstract: A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.

Abstract: A method to adjust transistor gate geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to form a reticle. A method to adjust transistor geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to compensate for transistor turn on voltage drop off where the transistor gate crosses the isolation/active interface.

Abstract: An integrated circuit includes an NMOS transistor, a PMOS transistor and a vertical bipolar transistor. The vertical bipolar transistor has an intrinsic base with a band barrier at least 25 meV high at a surface boundary of the intrinsic base, except at an emitter-base junction with an emitter, and except at a base-collector junction with a collector. The intrinsic base may be laterally surrounded by an extrinsic base with a higher dopant density than the intrinsic base, wherein a higher dopant density provides the band barrier at lateral surfaces of the intrinsic base. A gate may be disposed on a gate dielectric layer over a top surface boundary of the intrinsic base adjacent to the emitter. The gate is configured to accumulate the intrinsic base immediately under the gate dielectric layer, providing the band barrier at the top surface boundary of the intrinsic base.

Abstract: A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.

Abstract: A transistor structure with stress enhancement geometry aligned above the channel region. Also, a transistor structure with stress enhancement geometries located above and aligned with opposite sides of the channel region. Furthermore, methods for fabricating integrated circuits containing transistors with stress enhancement geometries.

Abstract: A method to adjust transistor gate geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to form a reticle. A method to adjust transistor geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to compensate for transistor turn on voltage drop off where the transistor gate crosses the isolation/active interface.

Abstract: A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.

Abstract: An integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which has a body region that is implanted concurrently with the NSD layers of the NMOS transistors of the CMOS gates and concurrently with the PSD layers of the PMOS transistors of the CMOS gates, and has a resistor silicide block layer over the body region which is formed of separate material from the sidewall spacers on the CMOS gates. A process of forming an integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which implants the body region of the resistor concurrently with the NSD layers of the NMOS transistors of the CMOS gates and concurrently with the PSD layers of the PMOS transistors of the CMOS gates, and forms a resistor silicide block layer over the body region of separate material from the sidewall spacers on the CMOS gates.

Abstract: A method to adjust transistor gate geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to form a reticle. A method to adjust transistor geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to compensate for transistor turn on voltage drop off where the transistor gate crosses the isolation/active interface.

Abstract: An integrated circuit includes an NMOS transistor, a PMOS transistor and a vertical bipolar transistor. The vertical bipolar transistor has an intrinsic base with a band barrier at least 25 meV high at a surface boundary of the intrinsic base, except at an emitter-base junction with an emitter, and except at a base-collector junction with a collector. The intrinsic base may be laterally surrounded by an extrinsic base with a higher dopant density than the intrinsic base, wherein a higher dopant density provides the band barrier at lateral surfaces of the intrinsic base. A gate may be disposed on a gate dielectric layer over a top surface boundary of the intrinsic base adjacent to the emitter. The gate is configured to accumulate the intrinsic base immediately under the gate dielectric layer, providing the band barrier at the top surface boundary of the intrinsic base.

Abstract: A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.

Abstract: An integrated circuit includes an NMOS transistor, a PMOS transistor and a vertical bipolar transistor. The vertical bipolar transistor has an intrinsic base with a band barrier at least 25 meV high at a surface boundary of the intrinsic base, except at an emitter-base junction with an emitter, and except at a base-collector junction with a collector. The intrinsic base may be laterally surrounded by an extrinsic base with a higher dopant density than the intrinsic base, wherein a higher dopant density provides the band barrier at lateral surfaces of the intrinsic base. A gate may be disposed on a gate dielectric layer over a top surface boundary of the intrinsic base adjacent to the emitter. The gate is configured to accumulate the intrinsic base immediately under the gate dielectric layer, providing the band barrier at the top surface boundary of the intrinsic base.

Abstract: An integrated circuit containing hydrogen permeable dummy vias configured in a linear or rectangular array and symmetrically positioned over a component in the integrated circuit. An integrated circuit containing matching components with identical layouts and hydrogen permeable dummy vias in identical configurations over the matching components. A process of forming an integrated circuit containing matching components with identical layouts and hydrogen permeable dummy vias in identical configurations over the matching components.

Abstract: An integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which has a body region that is implanted concurrently with the NSD layers of the NMOS transistors of the CMOS gates and concurrently with the PSD layers of the PMOS transistors of the CMOS gates, and has a resistor silicide block layer over the body region which is formed of separate material from the sidewall spacers on the CMOS gates. A process of forming an integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which implants the body region of the resistor concurrently with the NSD layers of the NMOS transistors of the CMOS gates and concurrently with the PSD layers of the PMOS transistors of the CMOS gates, and forms a resistor silicide block layer over the body region of separate material from the sidewall spacers on the CMOS gates.