Patents by Inventor Rak-Hwan Kim
Rak-Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160276267Abstract: Methods of forming wiring structures and methods of manufacturing semiconductor devices include forming a lower structure on a substrate, forming an interlayer insulating film including an opening on the lower structure, forming a liner film on an inner surface of the opening, treating a surface of the liner film by an ion bombardment, and forming a first conductive film on the liner film. The first conductive film is formed to be at least partially filled in the opening through a reflow process. Related wiring structures and semiconductor devices are also discussed.Type: ApplicationFiled: February 8, 2016Publication date: September 22, 2016Inventors: Jong-Jin Lee, Rak-Hwan Kim, Byung-Hee Kim, Jin-Nam Kim, Tsukasa Matsuda, Nae-In Lee, Jeong-Ok Cha, Jung-Ha Hwang
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Publication number: 20160141246Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.Type: ApplicationFiled: October 27, 2015Publication date: May 19, 2016Inventors: Jin-Nam Kim, Tsukasa Matsuda, Rak-Hwan Kim, Byung-Hee Kim, Nae-In Lee, Jong-Jin Lee
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Publication number: 20150132873Abstract: Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.Type: ApplicationFiled: September 5, 2014Publication date: May 14, 2015Inventors: John A. ROGERS, Ralph NUZZO, Hoon-sik KIM, Eric BRUECKNER, Sang Il PARK, Rak Hwan KIM
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Patent number: 8865489Abstract: Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.Type: GrantFiled: May 12, 2010Date of Patent: October 21, 2014Assignee: The Board of Trustees of the University of IllinoisInventors: John A. Rogers, Ralph Nuzzo, Hoon-sik Kim, Eric Brueckner, Sang Il Park, Rak Hwan Kim
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Publication number: 20120165759Abstract: Described herein are flexible and stretchable LED arrays and methods utilizing flexible and stretchable LED arrays. Assembly of flexible LED arrays alongside flexible plasmonic crystals is useful for construction of fluid monitors, permitting sensitive detection of fluid refractive index and composition. Co-integration of flexible LED arrays with flexible photodetector arrays is useful for construction of flexible proximity sensors. Application of stretchable LED arrays onto flexible threads as light emitting sutures provides novel means for performing radiation therapy on wounds.Type: ApplicationFiled: March 11, 2011Publication date: June 28, 2012Inventors: John A. Rogers, Rak-Hwan Kim, Dae-Hyeong Kim, David L. Kaplan, Fiorenzo G. Omenetto
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Patent number: 8124978Abstract: A capacitor and method of manufacturing the same include an insulating interlayer, a lower electrode, a protection structure, a dielectric layer and an upper electrode. The insulating interlayer may include a conductive pattern formed on a substrate. The lower electrode may be electrically connected to the conductive pattern. The protection structure may be formed on an outer sidewall of the cylindrical lower electrode and on the insulating interlayer.Type: GrantFiled: March 12, 2010Date of Patent: February 28, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-Young Kim, Rak-Hwan Kim, Young-Joo Cho, Won-sik Shin
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Publication number: 20100317132Abstract: Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.Type: ApplicationFiled: May 12, 2010Publication date: December 16, 2010Inventors: John A. Rogers, Ralph Nuzzo, Hoon-sik Kim, Eric Brueckner, Sang Il Park, Rak Hwan Kim
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Publication number: 20100188795Abstract: A capacitor and method of manufacturing the same include an insulating interlayer, a lower electrode, a protection structure, a dielectric layer and an upper electrode. The insulating interlayer may include a conductive pattern formed on a substrate. The lower electrode may be electrically connected to the conductive pattern. The protection structure may be formed on an outer sidewall of the cylindrical lower electrode and on the insulating interlayer.Type: ApplicationFiled: March 12, 2010Publication date: July 29, 2010Inventors: Hyun-Young Kim, Rak-Hwan Kim, Young-Joo Cho, Won-sik Shin
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Patent number: 7719045Abstract: In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.Type: GrantFiled: October 14, 2008Date of Patent: May 18, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Joo Cho, Hyun-Seok Lim, Rak-Hwan Kim, Jung-Wook Kim, Hyun-Suk Lee
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Patent number: 7709342Abstract: A capacitor and method of manufacturing the same include an insulating interlayer, a lower electrode, a protection structure, a dielectric layer and an upper electrode. The insulating interlayer may include a conductive pattern formed on a substrate. The lower electrode may be electrically connected to the conductive pattern. The protection structure may be formed on an outer sidewall of the cylindrical lower electrode and on the insulating interlayer.Type: GrantFiled: October 21, 2005Date of Patent: May 4, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-Young Kim, Rak-Hwan Kim, Young-Joo Cho, Won-sik Shin
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Patent number: 7541282Abstract: A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess that is less than a second concentration of nitrogen in the metal-nitride layer proximate an opening of the recess. A metal layer can be formed on the metal-nitride layer including in the recess.Type: GrantFiled: March 18, 2005Date of Patent: June 2, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-ho Han, Rak-hwan Kim, Kyung-in Choi, Sang-woo Lee, Gil-heyun Choi
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Patent number: 7524724Abstract: A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition technique performed at a first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas at a predetermined flow ratio and depositing a second titanium nitride layer on the first titanium nitride layer using a chemical vapor deposition process performed at a second temperature that is greater than the first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas.Type: GrantFiled: June 30, 2005Date of Patent: April 28, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Rak-Hwan Kim, Hyun-Seok Lim, Young-Joo Cho, In-Sun Park, Hyeon-Deok Lee, Hyun-Suk Lee
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Patent number: 7504725Abstract: A semiconductor memory device and a method of manufacturing the semiconductor memory device, in which a bit line can have a low resistance without an increase in the thickness of the bit line. In the semiconductor memory device, an insulating layer having a contact hole that exposes a conductive region is formed on a semiconductor substrate having the conductive region. A barrier metal layer is formed along the surface of the insulating layer and the surface of the contact hole. A grain control layer is formed between the barrier metal layer and the tungsten layer. A tungsten layer is formed on the grain control layer. A grain size of the tungsten layer is increased by the grain control layer.Type: GrantFiled: August 9, 2004Date of Patent: March 17, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Rak-Hwan Kim, Young-Cheon Kim, Hyeon-Deok Lee, Hyun-Young Kim, In-Sun Park
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Publication number: 20090039404Abstract: In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.Type: ApplicationFiled: October 14, 2008Publication date: February 12, 2009Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Joo CHO, Hyun-Seok LIM, Rak-Hwan KIM, Jung-Wook KIM, Hyun-Suk LEE
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Patent number: 7452783Abstract: In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.Type: GrantFiled: November 23, 2005Date of Patent: November 18, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Joo Cho, Hyun-Seok Lim, Rak-Hwan Kim, Jung-Wook Kim, Hyun-Suk Lee
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Publication number: 20080272355Abstract: A memory device using a phase change material and a method for forming the same are disclosed. One embodiment of a memory device includes a first insulating layer provided on a substrate and defining an opening; a first conductor including a first portion and a second portion, the first portion provided on a bottom of the opening, the second portion being continuously provided along a sidewall of the opening; a variable resistor connected to the second portion of the first conductor and provided along the sidewall of the opening; and a second conductor provided on the variable resistor.Type: ApplicationFiled: April 25, 2008Publication date: November 6, 2008Applicant: Samsung Electronics Co., Ltd.Inventors: Sung-Lae Cho, Byoung-Jae Bae, Jin-Il Lee, Hye-Young Park, Young-Lim Park, Rak-Hwan Kim
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Publication number: 20080185624Abstract: Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.Type: ApplicationFiled: April 9, 2008Publication date: August 7, 2008Inventors: Rak-Hwan Kim, Young-Joo Cho, Sung-Tae Kim, In-Sun Park, Hyeon-Deok Lee, Hyun-Suk Lee, Jung-Hee Chung, Hyun-Young Kim, Hyun-Seok Lim
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Patent number: 7364967Abstract: Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.Type: GrantFiled: November 3, 2005Date of Patent: April 29, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Rak-Hwan Kim, Young-Joo Cho, Sung-Tae Kim, In-Sun Park, Hyeon-Deok Lee, Hyun-Suk Lee, Jung-Hee Chung, Hyun-Young Kim, Hyun-Seok Lim
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Publication number: 20080003815Abstract: Provided is a method of forming a barrier metal layer of a semiconductor device. In the method, a barrier metal layer is formed on a top surface of a semiconductor substrate and then an electrode layer is formed on the semiconductor substrate. Forming the barrier metal layer includes performing a cyclic process repeatedly at least twice. The cyclic process includes depositing a titanium layer and nitriding the deposited titanium layer.Type: ApplicationFiled: June 28, 2007Publication date: January 3, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-Suk LEE, Hyun-Seok LIM, Rak-Hwan KIM, In-Sun PARK
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Publication number: 20070289609Abstract: According to an embodiment of the present invention, a method for cleaning a process chamber includes removing a TiAlN layer from an inner wall of the process chamber using a first cleaning gas containing a TiCl4 gas. According to principles of this invention, dry cleaning, without wet cleaning, is possible for cleaning the process chamber.Type: ApplicationFiled: June 19, 2007Publication date: December 20, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-Seok LIM, Gyu-Hwan OH, Rak-Hwan KIM, Keon-Hoe BAE, In-Sun PARK, Ki-Jong LEE