Abstract: In described examples, a ring oscillator includes a series of N stages in a first ring. Each stage includes a respective output terminal coupled to a respective input terminal of a next one of the stages in the first ring. N is a positive odd-numbered integer of at least three. A series of N level shifters in a second ring are respectively connected to the N stages. Each level shifter receives a respective clock output from a respective output terminal of a stage to which it is connected and generates a respective boosted clock output in response thereto. The boosted clock output is coupled to control an impedance state of a next one of the level shifters in the second ring.

Abstract: In described examples, a ring oscillator includes a series of N stages in a first ring. Each stage includes a respective output terminal coupled to a respective input terminal of a next one of the stages in the first ring. N is a positive odd-numbered integer of at least three. A series of N level shifters in a second ring are respectively connected to the N stages. Each level shifter receives a respective clock output from a respective output terminal of a stage to which it is connected and generates a respective boosted clock output in response thereto. The boosted clock output is coupled to control an impedance state of a next one of the level shifters in the second ring.

Abstract: An integrated circuit including a ferroelectric random access memory (FRAM) for storing firmware, and a method of updating that firmware. The FRAM is constructed to selectively operate as a 2T2C FRAM memory in a normal operating mode, and as a 1T1C FRAM memory in an update mode. Updating of the stored firmware is performed by placing the FRAM in its update (1T1C) mode and writing the updated code into alternate rows of the 1T1C half-cells at each of a plurality of memory locations, while the other 1T1C half-cells in the other alternate rows retain the original data. Following verification of the updated contents, the original data in the other half-cells are overwritten with the verified updated data, and the operating mode is changed back to the normal (2T2C) operating mode.

Abstract: An integrated circuit including a ferroelectric random access memory (FRAM) for storing firmware, and a method of updating that firmware. The FRAM is constructed to selectively operate as a 2T2C FRAM memory in a normal operating mode, and as a 1T1C FRAM memory in an update mode. Updating of the stored firmware is performed by placing the FRAM in its update (1T1C) mode and writing the updated code into alternate rows of the 1T1C half-cells at each of a plurality of memory locations, while the other 1T1C half-cells in the other alternate rows retain the original data. Following verification of the updated contents, the original data in the other half-cells are overwritten with the verified updated data, and the operating mode is changed back to the normal (2T2C) operating mode.

Abstract: An integrated circuit including a ferroelectric random access memory (FRAM) for storing firmware, and a method of updating that firmware. The FRAM is constructed to selectively operate as a 2T2C FRAM memory in a normal operating mode, and as a 1T1C FRAM memory in an update mode. Updating of the stored firmware is performed by placing the FRAM in its update (1T1C) mode and writing the updated code into alternate rows of the 1T1C half-cells at each of a plurality of memory locations, while the other 1T1C half-cells in the other alternate rows retain the original data. Following verification of the updated contents, the original data in the other half-cells are overwritten with the verified updated data, and the operating mode is changed back to the normal (2T2C) operating mode.

Abstract: A configurable integrated circuit (IC) includes a substrate having a semiconductor surface that the IC is formed within and thereon. The IC includes a configurable Analog Front End (cAFE) including at least one circuit module or input/output (IO), an analog switch having at least a first substantially gate enclosed Metal Oxide Semiconductor Field Effect Transistor (SGEFET) having a gate stack including a gate on a gate dielectric, a source, and a drain. The drain or source is a substantially gate enclosed (SGE) inner electrode relative to the gate, and the other of the source and the drain is outside the gate. The inner electrode of the first SGEFET is directly coupled to an analog bus. A switch control provides control signals to at least the gate of the first SGEFET for controlling a connectivity between the circuit module and/or the IO and the analog bus.

Abstract: An integrated circuit including a ferroelectric random access memory (FRAM) for storing firmware, and a method of updating that firmware. The FRAM is constructed to selectively operate as a 2T2C FRAM memory in a normal operating mode, and as a 1T1C FRAM memory in an update mode. Updating of the stored firmware is performed by placing the FRAM in its update (1T1C) mode and writing the updated code into alternate rows of the 1T1C half-cells at each of a plurality of memory locations, while the other 1T1C half-cells in the other alternate rows retain the original data. Following verification of the updated contents, the original data in the other half-cells are overwritten with the verified updated data, and the operating mode is changed back to the normal (2T2C) operating mode.

Abstract: Plaintext analysis as a countermeasure against side channel attacks. A system is disclosed that includes an encryption/decryption module performing an encryption algorithm for encrypting plaintext data using a secure encryption key stored in non-volatile memory coupled to the encryption/decryption module, the encryption/decryption module further performing an algorithm for decrypting encrypted ciphertext using the secure encryption key; and a plaintext analysis module coupled to the plaintext data, the plaintext analysis module performing an analysis and determining whether the plaintext data correlates to expected plaintext data, the plaintext analysis module outputting a signal indicating a side channel attack, responsive to the determining. Additional methods and apparatus are disclosed.

Abstract: A configurable integrated circuit (IC) includes a substrate having a semiconductor surface that the IC is formed within and thereon. The IC includes a configurable Analog Front End (cAFE) including at least one circuit module or input/output (IO), an analog switch having at least a first substantially gate enclosed Metal Oxide Semiconductor Field Effect Transistor (SGEFET) having a gate stack including a gate on a gate dielectric, a source, and a drain. The drain or source is a substantially gate enclosed (SGE) inner electrode relative to the gate, and the other of the source and the drain is outside the gate. The inner electrode of the first SGEFET is directly coupled to an analog bus. A switch control provides control signals to at least the gate of the first SGEFET for controlling a connectivity between the circuit module and/or the IO and the analog bus.

Abstract: An electronic device includes a bandgap reference voltage generation stage. The bandgap reference voltage generation stage comprises a device with a PN-junction, a current source feeding a first current during a first period of time and a second higher current during a second period of time through the PN-junction. The bandgap reference voltage is generated from a combination of a first voltage drop across the PN-junction during the first period of time and a second voltage drop across the PN-junction during the second period of time. This bandgap reference voltage is formed using switched capacitors.

Abstract: An electronic device includes a bandgap reference voltage generation stage. The bandgap reference voltage generation stage comprises a device with a PN-junction, a current source feeding a first current during a first period of time and a second higher current during a second period of time through the PN-junction. The bandgap reference voltage is generated from a combination of a first voltage drop across the PN-junction during the first period of time and a second voltage drop across the PN-junction during the second period of time. This bandgap reference voltage is formed using switched capacitors.

Abstract: The invention relates to an arrangement comprising a logarithmizing unit and a subtracting unit, wherein the subtracting unit has an output at which a voltage value linearly proportional to the temperature can be tapped off.

Abstract: The invention relates to a measuring arrangement, a semiconductor arrangement and a method for operating a reference source, wherein at least one semiconductor component and a voltage source are connected to a measuring unit and the measuring unit provides a measured value that is proportional to the number of defects.

Abstract: The invention relates to an electronic device which comprises a voltage regulator for providing a regulated output voltage to an electronic circuit and a control stage coupled to control the voltage regulator. The control stage is further configured to detect a request for a change of a system configuration of the electronic circuit coupled to receive the output voltage of the voltage regulator, to determine an activity factor of the electronic circuit for the requested system configuration, to determine a system clock frequency of a system clock of the electronic circuit, to determine a required current drive level of the voltage regulator based on the activity factor, the system clock frequency or the product of both, and to adjust the current drive level of the voltage regulator to the requested current drive level.

Abstract: An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs.

Abstract: An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs. Alternately, a FET is present in which: a channel region is the active region, the FET contains a web with opposing control electrodes connected by a connecting region that is isolated from the channel region by a thick insulating region. The thick insulating region is thicker than control electrode insulation regions. The control electrodes contain the same material as the far electrode region.

Abstract: The invention relates to an electronic component that can be operated by means of an alternating voltage. Said component includes at least one input, at least one output and a pair of electronic sub-components with an identical function. The input(s) of the electronic component is/are coupled to a respective input of the electronic sub-components with an identical function and the output(s) of the electronic component is/are coupled to a respective output of said electronic sub-components. In addition, the electronic component is configured in such a way that at least one output only one output signal of the first sub-component of the pair of functionally identical electronic components can be picked up during a first half-wave of an alternating voltage, whereas only one output signal of the second sub-component of the pair of functionally identical electronic can be picked up during the second half-wave of the alternating voltage.

Abstract: Noise-reducing transistor arrangement having first and second field effect transistors (FETs) having source terminals coupled together, drain terminals coupled together, and control terminals for application of a first or second signal. A clock generator unit is configured to provide the first and second signals alternately to the FETs with an alternating frequency which is at least as great as the cut-off frequency of the noise characteristic of the FETs, or with a reciprocal alternating frequency which is less than a mean lifetime of an occupation state of a defect in the boundary region between channel region and gate insulating layer of the FETs. The first signal is applied to the control terminal of the first FET and, simultaneously, the second signal to the control terminal of the second FET. The second signal is applied to the control terminal of the first FET and, simultaneously, the first signal to the control terminal of the second FET.

Abstract: The transistor arrangement contains a first and a second field effect transistor comprising a first and a second source drain connection and a control connection for applying a first or a second signal. The two field effect transistors are of the same conductive type. The transistor arrangement is configured in such a manner that the first signal can be applied in an alternating manner to the control connection of the first field effect transistor and the second signal can be applied in a simultaneous manner to the control connection of the second field effect transistor, and/or the second signal can be applied to the control connection of the first field effect transistor and the first signal can be applied simultaneously to the control connection of the second field effect transistor.

Abstract: A circuit arrangement includes a nonvolatile memory cell having a continuously variable characteristic that can be read out. A programming unit is coupled to the memory cell and designed to apply an analog signal to the memory cell in order to vary the characteristic, if the characteristic lies within a predetermined range of values, in such a way that the characteristic lies outside the predetermined range of values. A supply voltage unit is provided for providing a supply voltage. A changeover unit is coupled to the supply voltage unit and to the programming unit and designed to trigger the application of the analog signal to the memory cell if the supply voltage is interrupted.