Abstract: A material handling system for moving material from a storage device to a receiver comprises a counter rotating double screw feeder extending from the storage device to the receiver. The counter rotating double screw feeder comprises an outer screw feed member; an inner screw feed member; where the outer screw feed member being positioned in an outer screw feed member tube; and the inner screw feed member being positioned in an inner screw feed member tube. The material is feed from the storage device to the process tube via the outer screw feed member; the inner screw feed member removes gas and byproducts from the receiver.

Abstract: A system for grounding photovoltaic (PV) modules, comprising a frame for supporting PV modules, a support structure, and a viscous grounding material disposed between the frame and the support structure.

Abstract: A fused wiring harness having a fused wiring assembly and a second wiring assembly. The fused wiring assembly includes a first primary conductor, a first secondary fused conductor, and a second secondary fused conductor. The first secondary fused conductor is conductively connected to the first primary conductor at a first junction. The second secondary fused conductor is conductively connected to the first primary conductor at a second junction. The second wiring assembly includes a second primary conductor, a first secondary conductor, and a second secondary conductor. The first secondary conductor is conductively connected to the second primary conductor at a third junction. The fused wiring harness further includes a first overmold portion at least partially enveloping the first junction and the third junction, thereby securing the fused wiring assembly to the second wiring assembly.

Abstract: A material handling system for moving material from a storage device to a receiver comprises a counter rotating double screw feeder extending from the storage device to the receiver. The counter rotating double screw feeder comprises an outer screw feed member; an inner screw feed member; where the outer screw feed member being positioned in an outer screw feed member tube; and the inner screw feed member being positioned in an inner screw feed member tube. The material is feed from the storage device to the process tube via the outer screw feed member; the inner screw feed member removes gas and byproducts from the receiver.

Abstract: A method of fabricating a sheet of semiconductor material is provided. The method includes forming a first layer of silicon powder that has a lower surface and an opposite upper surface. The method also includes depositing a second layer of silicon powder across the upper surface of the first layer, wherein the second layer of silicon powder has a lower surface and an opposite upper surface and has a lower melting point than the first layer of silicon powder. The method also includes heating at least one of the first and second layers of silicon powder to initiate a controlled melt of at least one of the first and second layers of silicon powder, and cooling at least one of the first and second layers of silicon powder to initiate crystallization of at least one of the first and second layers of silicon powder.

Abstract: A method of manufacturing a sheet of semiconductor material is provided. The method includes forming a first layer of silicon powder of at least one semiconductor material, wherein the first layer has a lower surface and an opposite upper surface. The method further includes depositing a second layer across the upper surface of the first layer, wherein the second layer of silicon powder has a melting point that is substantially similar to the melting point of the first layer of silicon powder. The method also includes heating at least one of the first and second layers of silicon powder to initiate a controlled melt of one of the first and second layer of silicon powder and to initiate crystallization of at least one of the first and second layers of silicon powder.

Abstract: Methods and apparatus for fabricating a semiconductor sheet are provided. In one aspect, a method for fabricating a semiconductor wafer includes applying a layer of semiconductor material across a portion of a setter material, introducing the setter material and the semiconductor material to a predetermined thermal gradient to form a melt, wherein the thermal gradient includes a predetermined nucleation and growth region, and forming at least one local cold spot in the nucleation and growth region to facilitate inducing crystal nucleation at the at least one desired location.

Abstract: A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000° C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.

Abstract: A process for melting powders of a semiconductor material, such as silicon, to yield a high-purity solid product. The process generally entails introducing the powder into an elevated end of a tube inclined from horizontal and, while maintaining an inert atmosphere within the tube, rotating the tube so as to agitate and cause the powder therein to flow toward an oppositely-disposed lower end of the tube while heating the tube so that the powder melts as it flows toward the lower end of the tube. The molten material is then allowed to flow freely from the lower end of the tube and subsequently solidify to form a product.

Abstract: There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.

Abstract: Methods and systems for photovoltaic roofing systems are provided. The system includes a back sheet including a length, L, a width, W, and a thickness, T, the back sheet including an overlap portion extending along length L having a width, WO and an active portion extending along length L having a width, WA. The system also includes a photovoltaic cell formed on a surface of the active portion, the photovoltaic cell including a photovoltaic member electrically responsive to an absorption of photons, a negative electrode coupled to a surface of the photovoltaic member, and a positive electrode coupled to the surface of the photovoltaic member, wherein the thickness T is selected such that thickness T plus a thickness of the photoelectric cell substantially match a thickness of a proximate non-photovoltaic roofing member when the photovoltaic roofing system is installed.

Abstract: There is provided a structure comprising semiconductor material, the structure having at least one zone of reduced oxygen concentration, such zone having an interstitial oxygen concentration of not greater than 3×1017 oxygen atoms/cm3, such zone extending at least 75 microns in depth from a first major surface. There is further provided a photovoltaic cell comprising at least one such structure.

Abstract: There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.