Patents by Inventor Ralf Otremba

Ralf Otremba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10763246
    Abstract: A device includes a driver circuit, a first semiconductor chip monolithically integrated with the driver circuit in a first semiconductor material, and a second semiconductor chip integrated in a second semiconductor material. The second semiconductor material is a compound semiconductor.
    Type: Grant
    Filed: July 11, 2017
    Date of Patent: September 1, 2020
    Assignee: Infineon Technologies AG
    Inventors: Ralf Otremba, Klaus Schiess, Oliver Haeberlen, Matteo-Alessandro Kutschak
  • Publication number: 20200273802
    Abstract: A package includes: a package body having an outside housing including first and second package sides and package sidewalls that extend between the first and second package sides; first and second electrically conductive interface layers spaced apart from each other at the outside housing; and first and second power semiconductor chips arranged within the package body, both chips having a respective first load terminal and a respective second load terminal. The first load terminals are electrically connected to each other within the package body. The second load terminal of the first chip is electrically connected to the first electrically conductive interface layer. The second load terminal of the second chip is electrically connected to the second electrically conductive interface layer. The outside housing of the package body further includes a creepage structure having a minimum dimension between the first electrically conductive interface layer and the second electrically conductive interface layer.
    Type: Application
    Filed: February 24, 2020
    Publication date: August 27, 2020
    Inventor: Ralf Otremba
  • Patent number: 10755999
    Abstract: A power semiconductor arrangement includes a carrier and packages. Each package: encloses a power semiconductor die having first and second load terminals and configured to conduct a die load current between the load terminals; has a package body with a top side, a footprint side and sidewalls extending from the footprint side to the top side; a lead frame structure configured to electrically and mechanically couple the package to the carrier with the package footprint side facing the carrier, the lead frame structure including at least one first outside terminal electrically connected with the first load terminal of the die; a top layer arranged at the package top side and electrically connected with the second load terminal of the die. A top heatsink is attached to each package top layer, electrically contacted to each package top layer, and configured to conduct at least a sum of the die load currents.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: August 25, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Uwe Kirchner, Matteo-Alessandro Kutschak, Klaus Schiess, Bernd Schmoelzer
  • Patent number: 10734250
    Abstract: A method of manufacturing a semiconductor power package includes: embedding a power semiconductor chip in an encapsulation, the encapsulation forming a housing of the semiconductor power package; and extending a layer of a covering material over at least a part of an outer main surface of the encapsulation. The covering material has a thermal conductivity greater than a thermal conductivity of the material of the encapsulation and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: August 4, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Thomas Basler, Edward Fuergut, Christian Kasztelan, Ralf Otremba
  • Publication number: 20200243480
    Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.
    Type: Application
    Filed: March 16, 2020
    Publication date: July 30, 2020
    Applicant: Infineon Technologies AG
    Inventors: Edmund Riedl, Wu Hu Li, Alexander Heinrich, Ralf Otremba, Werner Reiss
  • Publication number: 20200219841
    Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.
    Type: Application
    Filed: March 16, 2020
    Publication date: July 9, 2020
    Applicant: Infineon Technologies AG
    Inventors: Edmund Riedl, Wu Hu Li, Alexander Heinrich, Ralf Otremba, Werner Reiss
  • Patent number: 10698021
    Abstract: A device includes a leadframe having a diepad and leads, a compound semiconductor chip arranged over a first surface of the diepad and including gate, source electrode and drain electrodes, and an encapsulation material covering the compound semiconductor chip and diepad. A second surface of the diepad opposite the first surface is exposed from the encapsulation material. The device also includes a first lead of the leadframe electrically coupled to the gate electrode, a second lead of the leadframe electrically coupled to the source electrode, a third lead of the leadframe electrically coupled to the source electrode, and a fourth lead of the leadframe electrically coupled to the drain electrode. The third lead is configured to provide a sensing signal representing an electrical potential of the source electrode to a gate driver circuit. The gate driver circuit is configured to drive the gate electrode based on the sensing signal.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: June 30, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Klaus Schiess
  • Patent number: 10699987
    Abstract: A package encloses a power semiconductor die that has a first load terminal at a die frontside facing a footprint side of the package and a second load terminal arranged at a die backside facing a top side of the package. The package also includes a lead frame configured to electrically and mechanically couple the package to a support. The lead frame has a planar first outside terminal electrically connected with the first load terminal and a planar second outside terminal electrically connected with the second load terminal. The planar first outside terminal is configured to interface with the support by means of a first contact area. The planar second outside terminal is configured to interface with the support by means of a second contact area. The second contact area has a size in a range between 80% and 120% of a size of the first contact area.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: June 30, 2020
    Assignee: tInfineon Technologies Austria AG
    Inventors: Ralf Otremba, Chooi Mei Chong, Markus Dinkel, Josef Hoeglauer, Klaus Schiess, Xaver Schloegel
  • Patent number: 10699978
    Abstract: A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals for blocking a blocking voltage. A lead frame structure electrically and mechanically couples the package to a support and includes an outside terminal extending out of the package footprint side and/or the sidewalls, and is electrically connected with the first load terminal. A top layer arranged at the package top side is electrically connected with the second load terminal. A creepage length between the electrical potential of the outside terminal and the electrical potential of the top layer is defined by a package body surface contour. The surface contour is formed at least by the package top side and package sidewall. At least one structural feature also forms the surface contour is configured to increase the creepage length.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: June 30, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Amirul Afiq Hud, Teck Sim Lee, Xaver Schloegel, Bernd Schmoelzer
  • Publication number: 20200144150
    Abstract: A package encloses a power semiconductor die and has a package body with a top side, footprint side and sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; and a top layer arranged at the package top side and electrically connected with the second load terminal. A heat spreader is mounted onto the top layer with a bottom surface facing the top layer. The area of the top surface of the heat spreader is greater than the area of the bottom surface.
    Type: Application
    Filed: January 8, 2020
    Publication date: May 7, 2020
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Publication number: 20200135619
    Abstract: In an embodiment, a semiconductor package includes a package footprint having a plurality of solderable contact pads, a semiconductor device having a first power electrode and a control electrode on a first surface and a second power electrode on a second surface, a redistribution substrate having an insulating board, wherein the first power electrode and the control electrode are mounted on a first major surface of the insulating board and the solderable contact pads of the package footprint are arranged on a second major surface of the insulating board, and a contact clip having a web portion and one or more peripheral rim portions. The web portion is mounted on and electrically coupled to the second power electrode and the peripheral rim portion is mounted on the first major surface of the insulating board.
    Type: Application
    Filed: October 30, 2019
    Publication date: April 30, 2020
    Inventors: Markus Dinkel, Petteri Palm, Eung San Cho, Josef Hoeglauer, Ralf Otremba, Fabian Schnoy
  • Patent number: 10615145
    Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: April 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Edmund Riedl, Wu Hu Li, Alexander Heinrich, Ralf Otremba, Werner Reiss
  • Publication number: 20200083207
    Abstract: A method of manufacturing a semiconductor device includes mounting a first semiconductor power chip on a first carrier, mounting a second semiconductor power chip on a second carrier, bonding a contact clip to the first semiconductor power chip and to the second semiconductor power chip, and mounting a third semiconductor chip over the contact clip.
    Type: Application
    Filed: November 14, 2019
    Publication date: March 12, 2020
    Inventors: Ralf Otremba, Josef Hoeglauer, Xaver Schloegel, Chooi Mei Chong
  • Patent number: 10566260
    Abstract: A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; a top layer arranged at the package top side and electrically connected with the second load terminal; and a heat spreader arranged external of the package body and in electrical contact with the top layer. A top surface of the heat spreader has an area greater than the area of the bottom surface.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: February 18, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Publication number: 20200006187
    Abstract: A heat dissipation device includes a first part having a first material and a surface portion, and a second part on the surface portion. The second part has a second material and a porosity.
    Type: Application
    Filed: June 26, 2019
    Publication date: January 2, 2020
    Inventors: Ralf Otremba, Irmgard Escher-Poeppel, Martin Gruber, Michael Juerss, Thorsten Scharf
  • Publication number: 20190304858
    Abstract: A semiconductor package system comprises a semiconductor package and a cap. The semiconductor package comprises a die pad, a chip mounted or arranged to a first main face of the die pad and an encapsulation body encapsulating the chip and the die pad. The cap covers at least partly an exposed second main face of the die pad. The cap comprises a cap body of an electrically insulating and thermally conductive material and a fastening system fastening the cap to the semiconductor package. The fastening system extends from the cap body towards the encapsulation body or along a side surface of the semiconductor package.
    Type: Application
    Filed: March 27, 2019
    Publication date: October 3, 2019
    Applicant: Infineon Technologies AG
    Inventors: Thorsten Scharf, Ralf Otremba, Thomas Bemmerl, Irmgard Escher-Poeppel, Martin Gruber, Michael Juerss, Thorsten Meyer, Xaver Schloegel
  • Publication number: 20190295920
    Abstract: A power semiconductor arrangement includes a carrier and packages. Each package: encloses a power semiconductor die having first and second load terminals and configured to conduct a die load current between the load terminals; has a package body with a top side, a footprint side and sidewalls extending from the footprint side to the top side; a lead frame structure configured to electrically and mechanically couple the package to the carrier with the package footprint side facing the carrier, the lead frame structure including at least one first outside terminal electrically connected with the first load terminal of the die; a top layer arranged at the package top side and electrically connected with the second load terminal of the die. A top heatsink is attached to each package top layer, electrically contacted to each package top layer, and configured to conduct at least a sum of the die load currents.
    Type: Application
    Filed: March 25, 2019
    Publication date: September 26, 2019
    Inventors: Ralf Otremba, Uwe Kirchner, Matteo-Alessandro Kutschak, Klaus Schiess, Bernd Schmoelzer
  • Patent number: 10373895
    Abstract: A semiconductor device includes a first lead frame, a second lead frame, a first semiconductor chip, and an encapsulation material. The first lead frame includes a first die pad having a first surface and a second surface opposite to the first surface. The second lead frame includes a second die pad having a first surface and a second surface opposite to the first surface. The first surface of the second die pad faces the first surface of the first die pad. The first semiconductor chip is attached to the first surface of the first die pad. The encapsulation material encapsulates the first semiconductor chip and portions of the first lead frame and the second lead frame. The encapsulation material has a first surface aligned with the second surface of the first die pad and a second surface aligned with the second surface of the second die pad.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: August 6, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Edward Fuergut, Martin Gruber, Wolfgang Scholz, Ralf Otremba
  • Patent number: 10373897
    Abstract: A device may include a carrier, a semiconductor chip arranged over a first surface of the carrier, and an encapsulation body comprising six side surfaces and encapsulating the semiconductor chip. A second surface of the carrier opposite to the first surface of the carrier is exposed from the encapsulation body. The device may further include electrical contact elements electrically coupled to the semiconductor chip and protruding out of the encapsulation body exclusively through two opposing side surfaces of the encapsulation body which have the smallest surface areas of all the side surfaces of the encapsulation body, and an electrically insulating layer arranged over the exposed second surface of the carrier.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: August 6, 2019
    Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Ralf Otremba, Felix Grawert, Amirul Afiq Hud, Uwe Kirchner, Teck Sim Lee, Guenther Lohmann, Hwee Yin Low, Edward Fuergut, Bernd Schmoelzer, Fabian Schnoy, Franz Stueckler
  • Publication number: 20190198355
    Abstract: A method of manufacturing a semiconductor power package includes: embedding a power semiconductor chip in an encapsulation, the encapsulation forming a housing of the semiconductor power package; and extending a layer of a covering material over at least a part of an outer main surface of the encapsulation. The covering material has a thermal conductivity greater than a thermal conductivity of the material of the encapsulation and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.
    Type: Application
    Filed: March 5, 2019
    Publication date: June 27, 2019
    Inventors: Thomas Basler, Edward Fuergut, Christian Kasztelan, Ralf Otremba