Patents by Inventor Ralph B. James
Ralph B. James has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10502842Abstract: Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.Type: GrantFiled: February 12, 2016Date of Patent: December 10, 2019Assignees: BROOKHAVEN SCIENCE ASSOCIATES, LLC, NORFOLK STATE UNIVERSITYInventors: Utpal N. Roy, Ralph B. James, Giuseppe Camarda, Yonggang Cui, Anwar Hossain, Ge Yang, Aswini Pradhan, Rajeh Mundle
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Publication number: 20180024254Abstract: Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.Type: ApplicationFiled: February 12, 2016Publication date: January 25, 2018Applicants: BROOKHAVEN SCIENCE ASSOCIATES, LLC, NORFOLK STATE UNIVERSITYInventors: UTPAL N. ROY, RALPH B. JAMES, ALEKSEY BOLOTNIKOV, GIUSEPPE CAMARDA, YONGGANG CUI, ANWAR HOSSAIN, GE YANG, ASWINI PRADHAN, RAJ EH MUNDLE
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Patent number: 9437692Abstract: Technologies are described effective to implement systems and methods of producing a material. The methods comprise receiving a tertiary semiconductor sample with a dilute species. The sample has two ends. The first end of the sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in the second end of the sample. The method further comprises heating the sample in a chamber. The chamber has a first zone and a second zone. The first zone having a first temperature higher than a second temperature in the second zone. The sample is orientated such that the first end is in the first zone and the second end is in the second zone.Type: GrantFiled: October 25, 2013Date of Patent: September 6, 2016Assignee: Brookhaven Science Associates, LLCInventors: Ralph B. James, Giuseppe Camarda, Aleksey E. Bolotnikov, Anwar Hossain, Ge Yang, Kihyun Kim
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Patent number: 9335423Abstract: A radiation detector device is provided that is capable of distinguishing between full charge collection (FCC) events and incomplete charge collection (ICC) events based upon a correlation value comparison algorithm that compares correlation values calculated for individually sensed radiation detection events with a calibrated FCC event correlation function. The calibrated FCC event correlation function serves as a reference curve utilized by a correlation value comparison algorithm to determine whether a sensed radiation detection event fits the profile of the FCC event correlation function within the noise tolerances of the radiation detector device. If the radiation detection event is determined to be an ICC event, then the spectrum for the ICC event is rejected and excluded from inclusion in the radiation detector device spectral analyses. The radiation detector device also can calculate a performance factor to determine the efficacy of distinguishing between FCC and ICC events.Type: GrantFiled: June 29, 2012Date of Patent: May 10, 2016Assignee: Brookhaven Science Associates, LLCInventors: Aleksey E. Bolotnikov, Gianluigi De Geronimo, Emerson Vernon, Ge Yang, Giuseppe Camarda, Yonggang Cui, Anwar Hossain, Ki Hyun Kim, Ralph B. James
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Patent number: 9134439Abstract: A radiation detector system that effectively solves the electron trapping problem by optimizing shielding of individual virtual Frisch-grid detectors in an array configuration with a common cathode.Type: GrantFiled: October 29, 2013Date of Patent: September 15, 2015Assignee: Brookhaven Science Associates, LLCInventors: Aleksey Bolotnikov, Ralph B. James, Gianluigi De Geronimo, Emerson Vernon
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Patent number: 9121953Abstract: A radiation detector system that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration with a common cathode.Type: GrantFiled: May 2, 2011Date of Patent: September 1, 2015Assignee: Brookhaven Science Associates, LLCInventors: Aleksey E. Bolotnikov, Ge Yang, Giuseppe Camarda, Yonggang Cui, Anwar Hossain, Ki Hyun Kim, Ralph B. James
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Publication number: 20140231657Abstract: A radiation detector device is provided that is capable of distinguishing between full charge collection (FCC) events and incomplete charge collection (ICC) events based upon a correlation value comparison algorithm that compares correlation values calculated for individually sensed radiation detection events with a calibrated FCC event correlation function. The calibrated FCC event correlation function serves as a reference curve utilized by a correlation value comparison algorithm to determine whether a sensed radiation detection event fits the profile of the FCC event correlation function within the noise tolerances of the radiation detector device. If the radiation detection event is determined to be an ICC event, then the spectrum for the ICC event is rejected and excluded from inclusion in the radiation detector device spectral analyses. The radiation detector device also can calculate a performance factor to determine the efficacy of distinguishing between FCC and ICC events.Type: ApplicationFiled: June 29, 2012Publication date: August 21, 2014Applicant: BROOKHAVEN SCIENCE ASSOCIATES, LLCInventors: Aleksey Bolotnikov, Gianluigi De Geronimo, Emerson Vernon, Ge Yang, Giuseppe Camarda, Yonggang Cui, Anwar Hossain, KiHyun Kim, Ralph B. James
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Publication number: 20140217297Abstract: A radiation detector system is disclosed that effectively solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration.Type: ApplicationFiled: October 29, 2013Publication date: August 7, 2014Applicant: Brookhaven Science Associates, LLCInventors: Aleksey Bolotnikov, Ralph B. James, Gianluigi De Geronimo, Emerson Vernon
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Publication number: 20140117513Abstract: Technologies are described effective to implement systems and methods of producing a material. The methods comprise receiving a tertiary semiconductor sample with a dilute species. The sample has two ends. The first end of the sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in the second end of the sample. The method further comprises heating the sample in a chamber. The chamber has a first zone and a second zone. The first zone having a first temperature higher than a second temperature in the second zone. The sample is orientated such that the first end is in the first zone and the second end is in the second zone.Type: ApplicationFiled: October 25, 2013Publication date: May 1, 2014Applicant: Brookhaven Science Associates, LLCInventors: Ralph B. James, Giuseppe Camarda, Aleksey E. Bolotnikov, Ryan Tappero, Yonggang Cui, Anwar Hosaain, Yang Ge, Kihyun Kim
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Patent number: 8586936Abstract: The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).Type: GrantFiled: May 2, 2011Date of Patent: November 19, 2013Assignee: Brookhaven Science Associates, LLCInventors: Ge Yang, Aleksey E. Bolotnikov, Giuseppe Camarda, Yonggang Cui, Anwar Hossain, Ki Hyun Kim, Ralph B. James
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Publication number: 20130126746Abstract: A novel radiation detector system is disclosed that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration.Type: ApplicationFiled: May 2, 2011Publication date: May 23, 2013Applicant: BROOKHAVEN SCIENCE ASSOCIATES, LLCInventors: Aleksey E. Bolotnikov, Ge Yang, Giuseppe Camarda, Yonggang Cui, Anwar Hossain, Ki Hyun Kim, Ralph B. James
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Publication number: 20120039446Abstract: An interwoven multi-aperture collimator for three-dimension radiation imaging applications is disclosed. The collimator comprises a collimator body including a plurality of apertures disposed in a two-dimensional grid. The collimator body is configured to absorb and collimate radiation beams emitted from a radiation source within a field of view of said collimator. The collimator body has a surface plane disposed closest to the radiation source. The two-dimensional grid is selectively divided into at least a first and a second group of apertures, respectively defining at least a first view and a second view of an object to be imaged. The first group of apertures is formed by interleaving or alternating rows of the grid, and the second group of apertures is formed by the rows of apertures adjacent to the rows of the first group.Type: ApplicationFiled: March 31, 2010Publication date: February 16, 2012Applicant: Brookhaven Science Associates, LLCInventors: Yonggang Cui, Ralph B. James
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Patent number: 8063378Abstract: The preferred embodiments are directed to a high-energy detector that is electrically shielded using an anode, a cathode, and a conducting shield to substantially reduce or eliminate electrically unshielded area. The anode and the cathode are disposed at opposite ends of the detector and the conducting shield substantially surrounds at least a portion of the longitudinal surface of the detector. The conducting shield extends longitudinally to the anode end of the detector and substantially surrounds at least a portion of the detector. Signals read from one or more of the anode, cathode, and conducting shield can be used to determine the number of electrons that are liberated as a result of high-energy particles impinge on the detector. A correction technique can be implemented to correct for liberated electron that become trapped to improve the energy resolution of the high-energy detectors disclosed herein.Type: GrantFiled: March 27, 2008Date of Patent: November 22, 2011Assignee: Brookhaven Science Associates, LLCInventors: Aleksey E. Bolotnikov, Giuseppe Camarda, Yonggang Cui, Ralph B. James
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Publication number: 20110272589Abstract: The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).Type: ApplicationFiled: May 2, 2011Publication date: November 10, 2011Applicant: Brookhaven Science Associates, LLCInventors: Ge Yang, Aleksey E. Bolotnikov, Giuseppe Camarda, Yonggang Cui, Anwar Hossain, Ki Hyun Kim, Ralph B. James
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Patent number: 7758843Abstract: The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.Type: GrantFiled: April 1, 2009Date of Patent: July 20, 2010Assignee: U.S. Department of EnergyInventors: Aleskey E. Bolotnikov, Ralph B. James
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Publication number: 20090026371Abstract: The preferred embodiments are directed to a high-energy detector that is electrically shielded using an anode, a cathode, and a conducting shield to substantially reduce or eliminate electrically unshielded area. The anode and the cathode are disposed at opposite ends of the detector and the conducting shield substantially surrounds at least a portion of the longitudinal surface of the detector. The conducting shield extends longitudinally to the anode end of the detector and substantially surrounds at least a portion of the detector. Signals read from one or more of the anode, cathode, and conducting shield can be used to determine the number of electrons that are liberated as a result of high-energy particles impinge on the detector. A correction technique can be implemented to correct for liberated electron that become trapped to improve the energy resolution of the high-energy detectors disclosed herein.Type: ApplicationFiled: March 27, 2008Publication date: January 29, 2009Applicant: Brookhaven Science Associates, LLCInventors: Aleksey E. Bolotnikov, Giuseppe Camarda, Yonggang Cui, Ralph B. James
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Patent number: 7001849Abstract: A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water.Type: GrantFiled: December 19, 2002Date of Patent: February 21, 2006Assignee: Sandia National LaboratoriesInventors: Gomez W. Wright, Ralph B. James, Arnold Burger, Douglas A. Chinn
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Patent number: 6821714Abstract: A photolithographic process forms patterns on HgI2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI2 surfaces and for producing trenches in HgI2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.Type: GrantFiled: November 13, 2000Date of Patent: November 23, 2004Assignee: Sandia National LaboratoriesInventors: Mark J. Mescher, Ralph B. James, Haim Hermon
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Patent number: 6649915Abstract: A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water after attaching electrical contacts to the crystal surface.Type: GrantFiled: December 19, 2002Date of Patent: November 18, 2003Assignee: Sandia National LaboratoriesInventors: Gomez W. Wright, Ralph B. James, Arnold Burger, Douglas A. Chinn
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Publication number: 20030148551Abstract: A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water.Type: ApplicationFiled: December 19, 2002Publication date: August 7, 2003Applicant: Sandia CorporationInventors: Gomez W. Wright, Ralph B. James, Arnold Burger, Douglas A. Chinn