Abstract: A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region.

Abstract: In order to achieve a long wavelength, 1.3 micron or above, VCSEL or other semiconductor laser, layers of strained quantum well material are supported by mechanical stabilizers which are nearly lattice matched with the GaAs substrate, or lattice mismatched in the opposite direction from the quantum well material; to allow the use of ordinary deposition materials and procedures. By interspersing thin, unstrained layers of e.g. gallium arsenide in the quantum well between the strained layers of e.g. InGaAs, the GaAs layers act as mechanical stabilizers keeping the InGaAs layers thin enough to prevent lattice relaxation of the InGaAs quantum well material. Through selection of the thickness and width of the mechanical stabilizers and strained quantum well layers in the quantum well, 1.3 micron and above wavelength lasing is achieved with use of high efficiency AlGaAs mirrors and standard gallium arsenide substrates.

Abstract: An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.

Abstract: Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL), can include at least one quantum well comprised of GaAsSb; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Barrier and confinement layers can comprise of AlGaAs. Barrier layers can also be comprised of GaAsP. Nitrogen can be placed in quantum wells. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

Abstract: An asymmetric distributed Bragg reflector (DBR) suitable for use in vertical cavity surface emitting lasers. The asymmetric DBR is comprised of stacked material layers having different indexes of refraction that are joined using asymmetrical transition regions in which the transition steps within a transition region have different material compositions, different doping levels, and different layer thicknesses. Adjacent transition regions have different transition steps. Thinner transition regions are relatively highly doped and are located where the optical standing wave within the DBR has a low field strength. Thicker transition regions are relatively lightly doped and are located where the optical standing wave has a relatively high field strength. Beneficially, in the AlXGa(1-X)As material system the stacked material layers are alternating layers of AlAs and GaAs. Other material systems will use other alternating layers.

Abstract: Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL), can include at least one quantum well comprised of InGaAsSb; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. A vertical cavity surface emitting laser (VCSEL), can also include at least one quantum well comprised of InGaAsSbN. Barrier layers can be comprised of GaAsN, GaAsP, or AlGaAs. Confinement layers can be comprised of AlGaAs. Quantum wells can include N. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

Abstract: A VCSEL having a current confinement structure comprised of deep traps formed by implanting either iron (Fe) or chrome (Cr) into a group III-V compound, such as InP or GaAs. Beneficially, the VCSEL is part of an array of VCSELs produced on a common substrate.

Abstract: Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser is described that includes at least one quantum well comprised of InGaAs; GaAsN barrier layers sandwiching said at least one quantum well; and GaAsN confinement layers sandwiching said barrier layers. GaAsN barrier layers sandwiching the quantum well and AlGaAs confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. AlGaAs barrier layers sandwiching the at least one quantum well and GaAsN confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. Quantum wells can be developed up to and including 50 Å in thickness.

Abstract: Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well comprised of InGaAsSbN; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Confinement and barrier layers can comprise AlGaAs. Barrier layer, in the alternative, can also comprise GaAsP. Nitrogen can be placed in the quantum wells. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

Abstract: Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well comprised of InGaAsN; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Confinement and barrier layers can comprise AlGaAs, GaAsN. Barrier layers can also comprise InGaAsN. Quantum wells can also include Sb. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

Abstract: A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region.

Abstract: An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.

Abstract: An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.

Abstract: A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+region situated directly over an N-active region. The active region also includes a p-doped region.

Abstract: An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.

Abstract: A light emitting device having a first mirror, an active layer, a second mirror, and a beryllium implantation resulting in a peripheral boundary of a waveguide through the first and second mirrors, the active layer and the trapping layer. A P-N junction is situated within the implantation and the guide. The turn on voltage is lower for the junction within the waveguide than that within the implantation, resulting in confinement of current within the guide at a voltage applied to the device that is greater than the lower junction voltage and less than the higher junction voltage. The device also has an electron trapping layer between said first mirror and said active layer, and a conduction layer situated on said second mirror.

Abstract: A vertical cavity surface emitting laser is provided with a mode control structure that selectively encourages or inhibits the lasing of the laser in regions of the mode control structure. Light is encouraged to lase and emit light through first portions of the mode control structure while lasing is inhibited in second portions. The first and second portions of the mode control structure are patterned by providing different thicknesses for the first and second portions of the mode control structure.

Abstract: A laser structure is provided with two current confining layers of a material that is subject to oxidation in the presence of an oxidizing agent. The laser structure is shaped to expose edges of the current confining layers to permit the edges to be exposed to the oxidizing agent. The current confining layers are oxidized selectively to create electrically resistive material at the oxidized portions and electrically conductive material at the unoxidized portions. The unoxidized portions of the layers are surrounded by the oxidized and electrically resistive portions in order to direct current from one electrical contact pad by passing through a preselected portion of an active region of the laser. The laser structure can be a vertical cavity surface emitting laser. The device achieves the current confining and directing function without the need to use ion bombardment or implantation to provide the current confining structure within the body of the laser.

Abstract: A group III-V substrate is doped with tellurium or another group VI element, instead of silicon, in order to avoid the conductivity type conversion that could otherwise occur if the group V element is boiled off during high temperature processing. For example, a gallium arsenide substrate can be doped with tellurium and then a gallium arsenide epitaxial layer can be deposited on a surface. If the substrate is heated beyond a predetermined temperature during the processing of the device, the arsenic can boil away from the substrate and leave arsenic vacancies. If the silicon is used as the substrate dopant, the silicon can migrate to the arsenic vacancies and replace arsenic, particularly proximate the substrate surface. If, on the other hand, tellurium or another group VI element is used as the substrate dopant, this change in conductivity type can not occur. Therefore, the conductivity conversion proximate the substrate surface will not create a thyristor-like behavior that is significantly disadvantageous.

Abstract: A light emitting device is provided with mirrors placed on opposite sides of the source of light and spaced apart by a distance that is determined as a function of the wavelength of the light emitted by the light source. One particular embodiment of the present invention spaces the mirrors apart by a distance equal to n.lambda./2+.lambda./4, where n is an integer value that is maintained as small as possible within practical constraints. The close proximity of the mirrors and their particular spacing which is determined as a function of the wavelength inhibits undesirable modes of light emission in directions toward the mirrors. This inhibition of light in undesirable modes perpendicular to the mirrors enhances the production of light in modes that are parallel to the mirror surfaces. The overall light output efficiency of the device is enhanced through the inhibition of these undesirable modes.