Abstract: A structure is formed from two layers of material having opposite conductivity types. A first region is formed within the structure, and extends at least in part into a layer to be etched. A surface of the structure is then masked and etched. The result is a microstructure which varies with the conductivity type and geometry of the region formed and etchant used.

Abstract: A structure and method of making a piezoresistive transducer with reduced offset current. The transducer is comprised of a piezoresistive die having a support rim and a diaphragm, and a support housing having a wall and an aperture. The shape of the diaphragm is matched with the shape of the aperture while the shape of the support rim is matched with the shape of the wall. By matching these shapes, temperature induced stresses are reduced, thus reducing temperature induced offset currents.

Abstract: A pressure transducer having means for improving the linearity and sensitivity of an output signal from the pressure transducer. Ribs and bosses are introduced in the diaphragm region to collect the moments caused by a difference in pressure on the two sides of the diaphragm and thus improve device sensitivity. In addition, the ribs and bosses prevent stretching of the piezoresistors thus improving the linearity of the device. A constraint can also be included to improve the alignment of the piezoresistors thus improving the linearity of the device.

Abstract: A structure and a device which allow low resistance connections to internal circuit devices comprising a double diffused leadout is described. The first leadout diffusion is lightly doped with dopant from either chemical group III or V to constitute N- or P- type material respectively. The lightly doped region has a high resistivity. The second diffusion is diffused, using a dopant from the same chemical group as the first dopant, into the first diffusion. The second diffusion is diffused with enough dopant to constitute N.sup.+ or P.sup.+ material and has a low resistivity. The double diffused leadout creates a low resistance connection to the internal circuitry of an IC device while maintaining breakdown with the protective overlayer.